Features
nFloating channel designed for bootstrap operation
Fully operational to +400V
Tolerant to negative transient voltage
dV/dt immune
nGate drive supply range from 10 to 20V
nUndervoltage lockout for both channels
nSeparate logic supply range from 5 to 20V
Logic and power ground ±5V offset
nCMOS Schmitt-triggered inputs with pull-down
nCycle by cycle edge-triggered shutdown logic
nMatched propagation delay for both channels
nOutputs in phase with inputs
IR2110E4
HIGH AND LOW SIDE DRIVER
Product Summary
VOFFSET 400V max.
IO+/- 2A / 2A
VOUT 10 - 20V
ton/off (typ.) 120ns & 94ns
Delay Matching 10ns
05/02/11
www.irf.com 1
Symbol Parameter Min. Max. Units
VBHigh Side Floating Supply Absolute Voltage -0.5 VS + 20
VSHigh Side Floating Supply Offset Voltage — 400
VHO High Side Output Voltage VS -0.5 VB + 0.5
VCC Low Side Fixed Supply Voltage -0.5 20
VLO Low Side Output Voltage -0.5 VCC + 0.5
VDD Logic Supply Voltage -0.5 VSS + 20
VSS Logic Supply Offset Voltage VCC - 20 VCC + 0.5
VIN Logic Input Voltage (HIN, LIN & SD) VSS - 0.5 VDD + 0.5
dVS/dt Allowable Offset Supply Voltage Transient (Fig. 16) — 50 V/ns
PDPackage Power Dissipation @ TA ≤ = 25°C (Fig. 19) — 1.6 W
RthJA Thermal Resistance, Junction to Ambient — 125 °C/W
TjJunction Temperature -55 125
TSStorage Temperature -55 150
TLPackage Mounting Surface Temperature 300 (for 5 seconds)
Weight 0.45 (typical) g
V
°C
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are
measured under board mounted and still air conditions. Additional information is shown in Figures 28 through 35.
Description
The IR2110E4 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and low
side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL outputs. The output drivers
feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Propagation delays
are matched to simplify use in high frequency applications.
The floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration
which operates up to 400 volts.
PD-60086C