PNP SILICON PLANAR EXPITAXIAL TRANSISTOR. 2N4037
TO-39
Metal Can Package
MEDIUM POWER AMPLIFIER AND SWITCHING APPLICATIONS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL VALUE UNITS
Collector Emitter Voltage VCEO(sus) *40 V
Collector Base Voltage VCBO 60 V
Emitter Base Voltage VEBO 7.0 V
Collector Current Continuous IC1.0 A
Base Current IB0.5 A
Continuous Power Dissipation PD1.0 W
@ or Below Ta=25ºC
Linear Derating Dissipation 5.72 mW/ºC
Operating And Storage Junction Tj, Tstg -65 to +200 ºC
Temperature Range
* Must not be tested on a curve tracer.
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION VALUE UNITS
Collector Emitter susstaining Voltage V(BR)CEO(sus) IC=100mA,IB=0 >40 V
Collector Base Breakdown Voltage V(BR)CBO IC=100µA,IE=0 >60 V
Collector Cut off Current ICBO VCB=60V, IE=0 <250 nA
Emitter Cut off Current IEBO VBE=5V, IC=0 <20 nA
DC Current Gain hFE IC=1mA,VCE=10V >15
IC=150mA,VCE=10V 50-250
Collector Emitter (sat) Voltage VCE(Sat) IC=150mA,IB=15mA <1.4 V
Base Emitter Voltage VBE(0n) IC=150mA,VCE=10V <1.5 V
DYNAMIC CHARACTERISTICS
DESCRIPTION SYMBOL TEST CONDITION VALUE UNITS
Collector Base Capacitance Ccb VCB= 10V, f=20MHz <30 pF
Current Gain -High Frequency | hfe |I
C =50mA, VCE=10V, 3.0-1.0
f=20MHz
Continental Device India Limited Data Sheet Page 1 of 3
Continental Device India Limited
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