DATA SH EET
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 30
DISCRETE SEMICONDUCTORS
J108; J109; J110
N-channel silicon junction FETs
1996 Jul 30 2
Philips Semiconductors Product specification
N-channel silicon junction FETs J108; J109; J110
FEATURES
•High speed switching
•Interchangeability of drain and source connections
•Low RDSon at zero gate voltage (<8 Ω for J108).
APPLICATIONS
•Analog switches
•Choppers and commutators.
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a TO-92 package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING - TO-92
PIN SYMBOL DESCRIPTION
1 g gate
2 s source
3 d drain
Fig.1 Simplified outline and symbol.
handbook, halfpage
1
3
2
MAM197
s
d
g
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −±25 V
VGSoff gate-source cut-off voltage ID=1µA; VDS =5V
J108 −3−10 V
J109 −2−6V
J110 −0.5 −4V
I
DSS drain current VGS = 0; VDS =5V
J108 80 −mA
J109 40 −mA
J110 10 −mA
Ptot total power dissipation up to Tamb =50°C−400 mW
1996 Jul 30 3
Philips Semiconductors Product specification
N-channel silicon junction FETs J108; J109; J110
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
STATIC CHARACTERISTICS
Tj=25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −±25 V
VGSO gate-source voltage open drain −−25 V
VGDO gate-drain voltage open source −−25 V
IGforward gate current (DC) −50 mA
Ptot total power dissipation up to Tamb =50°C−400 mW
Tstg storage temperature −65 150 °C
Tjoperating junction temperature −150 °C
SYMBOL PARAMETER VALUE UNIT
Rth j-a thermal resistance from junction to ambient 250 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)GSS gate-source breakdown voltage IG=−1µA; VDS =0 −−−25 V
VGSoff gate-source cut-off voltage ID=1µA; VDS =5V V
J108 −3−−10 V
J109 −2−−6V
J110 −0.5 −−4V
I
DSS drain current VGS = 0; VDS =15V
J108 80 −−mA
J109 40 −−mA
J110 10 −−mA
IGSS gate leakage current VGS =−15 V; VDS =0 −−−3nA
I
DSX drain-source cut-off current VGS =−10 V; VDS =5V −−3nA
R
DSon drain-source on-state resistance VGS = 0; VDS = 100 mV
J108 −−8Ω
J109 −−12 Ω
J110 −−18 Ω
1996 Jul 30 4
Philips Semiconductors Product specification
N-channel silicon junction FETs J108; J109; J110
DYNAMIC CHARACTERISTICS
Tj=25°C; unless otherwise specified.
Note
1. Test conditions for switching times are as follows:
VDD = 1.5 V; VGS = 0 to VGSoff (all types)
VGSoff =−12 V; RL= 100 Ω(J108)
VGSoff =−7 V; RL= 100 Ω(J109)
VGSoff =−5 V; RL= 100 Ω(J110).
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Cis input capacitance VDS = 0; VGS =−10 V; f = 1 MHz 15 30 pF
VDS = 0; VGS = 0; f = 1 MHz;
Tamb =25°C50 85 pF
Crs reverse transfer capacitance VDS = 0; VGS =−10 V; f = 1 MHz 8 15 pF
Switching times; see Fig.2
tddelay time note 1 2 −ns
ton turn-on time 4 −ns
tsstorage time 4 −ns
toff turn-off time 6 −ns
Fig.2 Switching circuit.
handbook, halfpage
MGE773
RL
50 Ω
DUT
SAMPLING
SCOPE
50 Ω
50 Ω0.1 µF
10 µF
10 nF
VDD
1996 Jul 30 5
Philips Semiconductors Product specification
N-channel silicon junction FETs J108; J109; J110
Fig.3 Input and output waveforms.
handbook, full pagewidth
MGE774
VGS off
toff
tf
ts
VGS = 0 V
Vi
Vo
10%
90%
90%
10%
ton
tdtr
1996 Jul 30 6
Philips Semiconductors Product specification
N-channel silicon junction FETs J108; J109; J110
PACKAGE OUTLINE
Fig.4 TO-92 (SOT54).
Dimensions in mm.
(1) Terminal dimensions in this zone are uncontrolled.
a
ndbook, full pagewidth
MBC014 - 1
2.54
4.8
max
4.2 max
1.7
1.4
0.66
0.56
1
2
3
5.2 max 12.7 min
2.0 max (1)
0.48
0.40
0.40
min
1996 Jul 30 7
Philips Semiconductors Product specification
N-channel silicon junction FETs J108; J109; J110
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.