Type IPP029N06N OptiMOSTM Power-Transistor Features Product Summary * Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V * 100% avalanche tested RDS(on),max 2.9 mW * Superior thermal resistance ID 100 A * N-channel 1) * Qualified according to JEDEC for target applications QOSS 65 nC QG(0V..10V) 56 nC * Pb-free lead plating; RoHS compliant PG-TO220-3 * Halogen-free according to IEC61249-2-21 Type Package Marking IPP029N06N PG-TO220-3 029N06N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 C 100 V GS=10 V, T C=100 C 100 V GS=10 V, T C=25 C, R thJA =50K/W 2) Unit A 24 Pulsed drain current3) I D,pulse T C=25 C 400 Avalanche energy, single pulse4) E AS I D=100 A, R GS=25 W 110 mJ Gate source voltage V GS 20 V 1) J-STD20 and JESD22 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain 3) connection. vertical in stillinformation air. See figurePCB 3 forismore detailed 2) 4) See figure 13 for more detailed information Rev.2.0 page 1 2011-12-06 IPP029N06N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 C 136 T A=25 C, T j, T stg -55 ... 175 IEC climatic category; DIN IEC 68-1 Parameter W 3.0 R thJA=50 K/W 3) Operating and storage temperature Unit C 55/175/56 Values Symbol Conditions Unit min. typ. max. - - 1.1 60 - - Thermal characteristics Thermal resistance, junction - case R thJC bottom K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=75 A - 2.8 - Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 C - 0.5 1 V DS=60 V, V GS=0 V, T j=125 C - 10 100 V A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=100 A - 2.7 2.9 mW V GS=6 V, I D=25 A - 5.4 - - 1.3 - W 80 160 - S Gate resistance RG Transconductance g fs Rev.2.0 |V DS|>2|I D|R DS(on)max, I D=100 A page 2 2011-12-06 IPP029N06N Parameter Values Symbol Conditions Unit min. typ. max. - 4100 - - 980 - Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=30 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 39 - Turn-on delay time t d(on) - 17 - Rise time tr - 15 - Turn-off delay time t d(off) - 30 - Fall time tf - 8 - Gate to source charge Q gs - 20 - Gate charge at threshold Q g(th) - 11 - Gate to drain charge Q gd - 11 - Switching charge Q sw - 19 - Gate charge total Qg - 56 - Gate plateau voltage V plateau - 4.8 - V Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 10 V - 49 - nC Output charge Q oss V DD=30 V, V GS=0 V - 65 - - - 120 - - 480 - 1.0 1.2 V - 37 - ns - 44 - nC V DD=30 V, V GS=10 V, I D=100 A, R G=3 W ns Gate Charge Characteristics5) V DD=30 V, I D=100 A, V GS=0 to 10 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) A T C=25 C V GS=0 V, I F=100 A, T j=25 C V R=30 V, I F=100A , di F/dt =100 A/s See figure 16 for gate charge parameter definition Rev.2.0 page 3 2011-12-06 IPP029N06N 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS10 V 160 120 140 100 120 80 ID [A] Ptot [W] 100 80 60 60 40 40 20 20 0 0 0 25 50 75 100 125 150 175 0 25 50 TC [C] 75 100 125 150 175 200 TC [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 10 1000 limited by on-state resistance 1 s 10 s 100 100 s 1 0.5 ZthJC [K/W] ID [A] 1 ms DC 10 10 ms 0.2 0.1 0.1 0.05 0.02 1 0.01 single pulse 0.1 0.1 1 10 100 0.0001 0.001 0.01 0.1 tp [s] VDS [V] Rev.2.0 0.01 0.00001 page 4 2011-12-06 IPP029N06N 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 400 10 V 8 7V 5V 360 5.5 V 6V 7 6V 320 6 280 RDS(on) [mW] ID [A] 240 5.5 V 200 160 5 4 7V 3 10 V 120 5V 2 80 1 40 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 80 160 VDS [V] 240 320 400 80 100 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C parameter: T j 400 160 360 320 120 280 gfs [S] ID [A] 240 200 80 160 120 40 80 40 175 C 25 C 0 0 0 2 4 6 8 VGS [V] Rev.2.0 0 20 40 60 ID [A] page 5 2011-12-06 IPP029N06N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 7 5 6.5 6 4 5.5 5 3 4 VGS(th) [V] RDS(on) [mW] 4.5 max 3.5 3 typ 750 mA 75 A 2 2.5 2 1.5 1 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [C] 60 100 140 180 Tj [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 10000 Ciss 103 102 1000 IF [A] C [pF] Coss 25 C 102 101 100 175 C Crss 101 100 10 0 20 40 60 VDS [V] Rev.2.0 0 0.5 1 1.5 2 VSD [V] page 6 2011-12-06 IPP029N06N 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD 1000 12 30 V 10 12 V 125 C 100 C VGS [V] 8 IAV [A] 100 48 V 25 C 10 6 4 2 1 0 1 10 100 1000 0 10 tAV [s] 20 30 40 50 60 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 70 V GS Qg VBR(DSS) [V] 66 62 V g s(th) 58 54 Q g (th) Q sw Q gs 50 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [C] Rev.2.0 page 7 2011-12-06 IPP029N06N Package Outline Rev.2.0 PG-TO220-3 page 8 2011-12-06 IPP029N06N Published by Infineon Technologies AG 81726 Munich, Germany (c) 2011 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.0 page 9 2011-12-06