Type
IPP029N06N
OptiMOSTM Power-Transistor
Features
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
VDS 60 V
RDS(on),max 2.9 mW
I
D
100 A
Q
OSS
65 nC
QG(0V..10V) 56 nC
Product Summary
Type Package Marking
IPP029N06N
PG
-
TO220
-
3
029N06N
PG-TO220-3
Rev.2.0 page 1 2011-12-06
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDVGS=10 V, TC=25 °C 100 A
VGS=10 V, TC=100 °C 100
VGS=10 V, TC=25 °C,
RthJA =50K/W 2) 24
Pulsed drain current3) ID,pulse TC=25 °C 400
Avalanche energy, single pulse4) EAS ID=100 A, RGS=25 W110 mJ
Gate source voltage VGS ±20 V
3) See figure 3 for more detailed information
Value
1)
4)
See figure 13 for more detailed information
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Type Package Marking
IPP029N06N PG-TO220-3 029N06N
Rev.2.0 page 1 2011-12-06
IPP029N06N
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Power dissipation Ptot TC=25 °C 136 W
TA=25 °C,
RthJA=50 K/W3) 3.0
Operating and storage temperature Tj,Tstg -55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC bottom - - 1.1 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Value
Values
Rev.2.0 page 2 2011-12-06
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 60 - - V
Gate threshold voltage VGS(th) VDS=VGS,ID=75 µA - 2.8 -
Zero gate voltage drain current IDSS VDS=60 V, VGS=0 V,
Tj=25 °C - 0.5 1 µA
VDS=60 V, VGS=0 V,
Tj=125 °C - 10 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 10 100 nA
RDS(on) VGS=10 V, ID=100 A - 2.7 2.9 mW
VGS=6 V, ID=25 A - 5.4 -
Gate resistance RG- 1.3 - W
Transconductance gfs |VDS|>2|ID|RDS(on)max,
ID=100 A 80 160 - S
Drain-source on-state resistance
Rev.2.0 page 2 2011-12-06
IPP029N06N
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 4100 - pF
Output capacitance Coss - 980 -
Reverse transfer capacitance Crss - 39 -
Turn-on delay time td(on) - 17 - ns
Rise time tr- 15 -
Turn-off delay time td(off) - 30 -
Fall time tf- 8 -
Gate Charge Characteristics
5)
Gate to source charge Qgs - 20 - nC
Gate charge at threshold Qg(th) - 11 -
Gate to drain charge Qgd - 11 -
Switching charge
Q
-
19
-
Values
VGS=0 V, VDS=30 V,
f=1 MHz
VDD=30 V, VGS=10 V,
ID=100 A, RG=3 W
VDD=30 V, ID=100 A,
V
GS
=0 to 10 V
Rev.2.0 page 3 2011-12-06
Switching charge
Q
sw
-
19
-
Gate charge total Qg- 56 -
Gate plateau voltage Vplateau - 4.8 - V
Gate charge total, sync. FET Qg(sync) VDS=0.1 V,
VGS=0 to 10 V - 49 - nC
Output charge Qoss VDD=30 V, VGS=0 V - 65 -
Reverse Diode
Diode continuous forward current IS- - 120 A
Diode pulse current IS,pulse - - 480
Diode forward voltage VSD VGS=0 V, IF=100 A,
Tj=25 °C - 1.0 1.2 V
Reverse recovery time trr - 37 - ns
Reverse recovery charge Qrr - 44 - nC
5) See figure 16 for gate charge parameter definition
VR=30 V, IF=100A,
diF/dt=100 A/µs
TC=25 °C
V
GS
=0 to 10 V
Rev.2.0 page 3 2011-12-06
IPP029N06N
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
0
20
40
60
80
100
120
140
160
0 25 50 75 100 125 150 175
Ptot [W]
TC[°C]
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175 200
ID[A]
TC[°C]
Rev.2.0 page 4 2011-12-06
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
0.1
1
10
100
1000
0.1 1 10 100
ID[A]
VDS [V]
limited by on-state
resistance
singlepulse
0.01
0.02
0.05
0.1
0.2
0.5
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
ZthJC [K/W]
tp[s]
0
20
40
60
80
100
120
140
160
0 25 50 75 100 125 150 175
Ptot [W]
TC[°C]
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175 200
ID[A]
TC[°C]
Rev.2.0 page 4 2011-12-06
IPP029N06N
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
5 V 5.5 V 6 V
7 V
10 V
0
1
2
3
4
5
6
7
8
0 80 160 240 320 400
RDS(on) [mW]
ID[A]
5 V
5.5 V
6 V
7 V
10 V
0
40
80
120
160
200
240
280
320
360
400
0.0 0.5 1.0 1.5 2.0 2.5 3.0
ID[A]
VDS [V]
Rev.2.0 page 5 2011-12-06
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
5 V 5.5 V 6 V
7 V
10 V
0
1
2
3
4
5
6
7
8
0 80 160 240 320 400
RDS(on) [mW]
ID[A]
25 °C
175 °C
0
40
80
120
160
200
240
280
320
360
400
02468
ID[A]
VGS [V]
0
40
80
120
160
0 20 40 60 80 100
gfs [S]
ID[A]
5 V
5.5 V
6 V
7 V
10 V
0
40
80
120
160
200
240
280
320
360
400
0.0 0.5 1.0 1.5 2.0 2.5 3.0
ID[A]
VDS [V]
Rev.2.0 page 5 2011-12-06
IPP029N06N
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=100 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS
typ
max
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj[°C]
75 µA
750 mA
0
1
2
3
4
5
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Rev.2.0 page 6 2011-12-06
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
max
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj[°C]
75 µA
750 mA
0
1
2
3
4
5
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Ciss
Coss
Crss
101
102
103
104
10
100
1000
10000
0 20 40 60
C[pF]
VDS [V]
25 °C
175 °C
100
101
102
103
0 0.5 1 1.5 2
IF[A]
VSD [V]
Rev.2.0 page 6 2011-12-06
IPP029N06N
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=100 A pulsed
parameter: Tj(start) parameter: VDD
12 V
30 V
48 V
0
2
4
6
8
10
12
0 10 20 30 40 50 60
VGS [V]
Qgate [nC]
25 °C
100 °C
125 °C
1
10
100
1000
1 10 100 1000
IAV [A]
tAV [µs]
Rev.2.0 page 7 2011-12-06
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
50
54
58
62
66
70
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
VGS
Qgate
Vgs(th)
Qg(th)
Qgs Qgd
Qsw
Qg
12 V
30 V
48 V
0
2
4
6
8
10
12
0 10 20 30 40 50 60
VGS [V]
Qgate [nC]
25 °C
100 °C
125 °C
1
10
100
1000
1 10 100 1000
IAV [A]
tAV [µs]
Rev.2.0 page 7 2011-12-06
IPP029N06N
Package Outline PG-TO220-3
Rev.2.0 page 8 2011-12-06Rev.2.0 page 8 2011-12-06
IPP029N06N
Published by
Rev.2.0 page 9 2011-12-06
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.0 page 9 2011-12-06