Preliminary Technical Information IXTY48P05T IXTA48P05T IXTP48P05T TrenchPTM Power MOSFETs VDSS ID25 RDS(on) P-Channel Enhancement Mode Avalanche Rated = = - 50V - 48A 30m TO-252 (IXTY) G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 50 V VDGR TJ = 25C to 150C, RGS = 1M - 50 V VGSS Continuous + 15 V VGSM Transient + 25 V ID25 TC = 25C - 48 A IDM TC = 25C, Pulse Width Limited by TJM -150 A IA EAS TC = 25C TC = 25C - 48 300 A mJ PD TC = 25C 150 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 1.13 / 10 Nm/lb.in. 0.35 2.50 3.00 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic body for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS - 50 VGS = 0V, ID = - 250A VGS(th) VDS = VGS, ID = - 250A - 2.0 IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = -10V, ID = 0.5 * ID25, Note 1 S D (Tab) TO-220AB (IXTP) G Features z International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG z V z z z - 10 A - 250 A 30 m Easy to Mount Space Savings High Power Density Applications z z z z z z (c) 2013 IXYS CORPORATION, All Rights Reserved D (Tab) G = Gate D = Drain S = Source Tab = Drain 50 nA TJ = 125C DS Advantages V - 4.5 G High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS100293A(01/13) IXTY48P05T IXTA48P05T IXTP48P05T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 16 VDS = -10V, ID = 0.5 * ID25, Note 1 Ciss 26 S 3660 pF 495 pF 215 pF VGS = 0V, VDS = - 25V, f = 1MHz Coss Crss td(on) Resistive Switching Times tr VGS = -10V, VDS = - 30V, ID = 0.5 * ID25 td(off) RG = 3 (External) tf Qg(on) VGS = -10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgs TO-252 Outline Qgd 20 ns 15 ns 30 ns Dim. 13 ns A A1 2.19 0.89 53 nC 16 nC A2 b 21 nC 0.83 C/W RthJC RthCS TO-220 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 48 A ISM Repetitive, Pulse Width Limited by TJM -192 A VSD IF = IS, VGS = 0V, Note 1 -1.5 V trr QRM IRM IF = 0.5 * ID25, -di/dt = -100A/s VR = - 25V, VGS = 0V Note 1: Pulse test, t 300s, duty cycle, d 2%. TO-263 Outline 1. 2. 3. 4. Gate Drain Source Drain 30 43.4 - 2.8 Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 Pins: 1 - Gate 3 - Source Millimeter Min. Max. 2,4 - Drain Inches Min. Max. 2.38 1.14 0.086 0.035 0.094 0.045 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC TO-220 Outline ns nC A Pins: 1 - Gate 3 - Source 2 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTY48P05T IXTA48P05T IXTP48P05T Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C -180 -48 VGS = -10V - 9V -44 -40 - 8V -120 - 7V -28 ID - Amperes ID - Amperes -32 -24 -20 - 8V -100 - 6V -16 - 9V -140 -36 - 7V -80 -60 -12 - 6V -40 -8 - 5V -4 - 5V -20 - 4V - 4V 0 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 0 -1.6 -5 -10 -15 -20 -25 -30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125C Fig. 4. RDS(on) Normalized to ID = - 24A Value vs. Junction Temperature 1.6 -48 VGS = -10V - 9V -44 VGS = -10V 1.5 -40 - 8V 1.4 -32 R DS(on) - Normalized -36 ID - Amperes VGS = -10V -160 - 7V -28 -24 - 6V -20 -16 - 5V -12 I D = - 48A 1.3 1.2 I D = - 24A 1.1 1.0 0.9 -8 0.8 - 4V -4 0 0.7 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 24A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature -55 1.9 VGS = -10V -45 TJ = 125C ID - Amperes R DS(on) - Normalized 1.7 1.5 1.3 -35 -25 -15 TJ = 25C 1.1 -5 0.9 0 -20 -40 -60 -80 ID - Amperes (c) 2013 IXYS CORPORATION, All Rights Reserved -100 -120 -140 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTY48P05T IXTA48P05T IXTP48P05T Fig. 8. Transconductance Fig. 7. Input Admittance -60 40 TJ = - 40C 35 -50 g f s - Siemens ID - Amperes 30 TJ = 125C 25C - 40C -40 -30 -20 25C 25 125C 20 15 10 -10 5 0 -3.0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 0 -10 -20 -30 VGS - Volts -40 -50 -60 -70 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode -160 -10 VDS = - 27.5V I D = - 24A I G = -1mA -9 -140 -8 -120 VGS - Volts IS - Amperes -7 -100 -80 -60 TJ = 125C -6 -5 -4 -3 -40 -2 TJ = 25C -20 -1 0 -0.2 0 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 -1.8 5 10 15 20 25 30 35 40 45 50 55 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 - 1,000 RDS(on) Limit Ciss - 100 25s ID - Amperes Capacitance - PicoFarads f = 1 MHz 1,000 Coss 100s 1ms - 10 10ms TJ = 150C 100 0 -5 -10 -15 -20 -25 100ms TC = 25C Single Pulse Crss -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 -1 DC - 10 VDS - Volts - 100 IXTY48P05T IXTA48P05T IXTP48P05T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 15.5 16.0 RG = 3, VGS = -10V RG = 3, VGS = -10V VDS = - 30V VDS = - 30V 15.5 I D t r - Nanoseconds t r - Nanoseconds 15.0 = - 48A 14.5 I D = - 24A 15.0 TJ = 25C 14.5 14.0 TJ = 125C 14.0 13.5 13.5 13.0 25 35 45 55 65 75 85 95 105 115 125 -24 -26 -28 -30 -32 -34 TJ - Degrees Centigrade 26 td(on) - - - - 26 16 22 14 21 12 20 10 19 8 6 7 8 9 10 11 12 13 14 34 15 32 14 13 28 12 26 25 15 35 45 55 41 35 38 30 tf t f - Nanoseconds 29 12 26 10 23 5 11 -36 -38 24 125 -40 -42 ID - Amperes (c) 2013 IXYS CORPORATION, All Rights Reserved -44 -46 -48 td(off) - - - 60 TJ = 125C, VGS = -10V 50 I D = - 24A 20 13 -34 115 25 32 -32 105 VDS = - 30V 14 -30 95 40 15 30 I D = - 48A 20 10 3 4 5 6 7 8 9 10 RG - Ohms 11 12 13 14 15 t d(off) - Nanoseconds 35 TJ = 25C, 125C t d(off) - Nanoseconds VDS = - 30V -28 85 70 td(off) - - - - t f - Nanoseconds tf RG = 3, VGS = -10V -26 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 17 -24 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 15 30 I D = - 48A, - 24A RG - Ohms 16 -48 36 11 18 5 td(off) - - - - VDS = - 30V 16 t f - Nanoseconds 23 I D = - 24A, - 48A 4 -46 t d(off) - Nanoseconds 24 t d(on) - Nanoseconds t r - Nanoseconds VDS = - 30V 3 -44 RG = 3, VGS = -10V 25 20 18 -42 38 tf 17 TJ = 125C, VGS = -10V 22 -40 18 27 24 -38 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr -36 ID - Amperes IXTY48P05T IXTA48P05T IXTP48P05T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - C / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_48P05T(A2)10-18-10