© 2013 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C - 50 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 50 V
VGSS Continuous + 15 V
VGSM Transient + 25 V
ID25 TC= 25°C - 48 A
IDM TC= 25°C, Pulse Width Limited by TJM -150 A
IATC= 25°C - 48 A
EAS TC= 25°C 300 mJ
PDTC= 25°C 150 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic body for 10s 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-252 0.35 g
TO-263 2.50 g
TO-220 3.00 g
DS100293A(01/13)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250μA - 50 V
VGS(th) VDS = VGS, ID = - 250μA - 2.0 - 4.5 V
IGSS VGS = ± 15V, VDS = 0V ±50 nA
IDSS VDS = VDSS, VGS = 0V - 10 μA
TJ = 125°C - 250 μA
RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 30 mΩ
TrenchPTM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
IXTY48P05T
IXTA48P05T
IXTP48P05T
VDSS = - 50V
ID25 = - 48A
RDS(on) ≤≤
≤≤
≤ 30mΩΩ
ΩΩ
Ω
Features
zInternational Standard Packages
z Avalanche Rated
zExtended FBSOA
zFast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh-Side Switching
zPush Pull Amplifiers
zDC Choppers
zAutomatic Test Equipment
zCurrent Regulators
zBattery Charger Applications
Preliminary Technical Information
TO-252 (IXTY)
G
S
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
TO-263 AA (IXTA)
G
S
D (Tab)
GDS
TO-220AB (IXTP)
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY48P05T IXTA48P05T
IXTP48P05T
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 16 26 S
Ciss 3660 pF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 495 pF
Crss 215 pF
td(on) 20 ns
tr 15 ns
td(off) 30 ns
tf 13 ns
Qg(on) 53 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 16 nC
Qgd 21 nC
RthJC 0.83 °C/W
RthCS TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 48 A
ISM Repetitive, Pulse Width Limited by TJM -192 A
VSD IF = IS, VGS = 0V, Note 1 -1.5 V
trr 30 ns
QRM 43.4 nC
IRM - 2.8 A
Resistive Switching Times
VGS = -10V, VDS = - 30V, ID = 0.5 • ID25
RG = 3Ω (External)
IF = 0.5 • ID25, -di/dt = -100A/μs
VR = - 25V, VGS = 0V
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 Outline
TO-263 Outline
1. Gate
2. Drain
3. Source
4. Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.40 0.74 .016 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .280 .320
E 9.65 10.41 .380 .405
E1 6.22 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.13 0 .005
TO-252 Outline
Pins: 1 - Gate 2,4 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2013 IXYS CORPORATION, All Rights Reserved
IXTY48P05T IXTA48P05T
IXTP48P05T
Fi g . 1. Ou tpu t C har acteri sti cs @ T
J
= 25ºC
-48
-44
-40
-36
-32
-28
-24
-20
-16
-12
-8
-4
0
-1.6-1.4-1.2-1-0.8-0.6-0.4-0.20
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 5
V
- 6
V
- 4
V
- 7
V
- 8
V
Fi g . 2. Extend ed Ou tp u t Ch ar ac ter i stics @ T
J
= 25ºC
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
-30-25-20-15-10-50
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 6
V
- 7
V
- 5
V
- 8
V
- 9
V
- 4
V
Fi g . 3. Ou tpu t C har acteri sti cs @ T
J
= 125º C
-48
-44
-40
-36
-32
-28
-24
-20
-16
-12
-8
-4
0
-2-1.8-1.6-1.4-1.2-1-0.8-0.6-0.4-0.20
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 6V
- 5V
- 4V
- 7V
- 8V
Fig. 4. R
DS(on)
Normalized to I
D
= - 24A Valu e vs.
Junction T emperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= -10V
I
D
= - 48A
I
D
= - 24A
Fig. 5. R
DS(on)
No r maliz ed to I
D
= - 24A Valu e vs.
Drain Current
0.9
1.1
1.3
1.5
1.7
1.9
-140-120-100-80-60-40-200
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= -10V
T
J
= 25ºC
T
J
= 125ºC
Fi g . 6. Maximum Drai n C u r ren t vs.
Case Temperatu r e
-55
-45
-35
-25
-15
-5
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY48P05T IXTA48P05T
IXTP48P05T
Fig. 7. Input Admittance
-60
-50
-40
-30
-20
-10
0
-7.0-6.5-6.0-5.5-5.0-4.5-4.0-3.5-3.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
-70-60-50-40-30-20-100
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-160
-140
-120
-100
-80
-60
-40
-20
0
-1.8-1.6-1.4-1.2-1.0-0.8-0.6-0.4-0.2
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar ge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 5 10 15 20 25 30 35 40 45 50 55
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= - 27.5V
I
D
= - 24A
I
G
= -1mA
Fig. 11. Capacitance
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MH
z
Ciss
Crss
Coss
Fi g . 12. F o r war d -B i as Safe O p er ati n g Area
1
10
100
1,000
1 10 100
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
10ms
1ms
R
DS(on)
Limit
100ms
DC
-
-
- -
-
-
-
100µs
25µs
© 2013 IXYS CORPORATION, All Rights Reserved
IXTY48P05T IXTA48P05T
IXTP48P05T
Fig . 14. Resistive Tur n-o n Ri se Ti me vs.
Drain Current
13.0
13.5
14.0
14.5
15.0
15.5
16.0
-48-46-44-42-40-38-36-34-32-30-28-26-24
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 3Ω, V
GS
= -10V
V
DS
= - 30V
T
J
= 25ºC
T
J
= 125ºC
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
8
10
12
14
16
18
20
22
24
26
3456789101112131415
R
G
- Ohms
t
r
- Nanoseconds
18
19
20
21
22
23
24
25
26
27
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= - 30V
I
D
= - 24A, - 48A
Fi g. 16. R esi stive Turn -o ff Switchi n g Ti mes vs.
Junctio n Temperat ur e
11
12
13
14
15
16
17
18
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
24
26
28
30
32
34
36
38
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3Ω, V
GS
= -10V
V
DS
= - 30V
I
D
= - 48A, - 24A
Fi g. 17. R esi stive Turn -o ff Switchi n g Ti mes vs.
Drain Current
23
26
29
32
35
38
41
-48-46-44-42-40-38-36-34-32-30-28-26-24
I
D
- Amperes
t f
- Nanoseconds
11
12
13
14
15
16
17
t d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3Ω, V
GS
= -10V
V
DS
= - 30V
T
J
= 25ºC, 125ºC
Fig . 13. Resistive Tur n-o n Ri se Ti me vs.
Junction Temperature
13.5
14.0
14.5
15.0
15.5
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3Ω, V
GS
= -10V
V
DS
= - 30V
I
D
= - 24A
I
D
= - 48A
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
5
10
15
20
25
30
35
3 4 5 6 7 8 9 10 11 12 13 14 15
R
G
- Ohms
t
f
- Nanoseconds
10
20
30
40
50
60
70
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= - 30V
I
D
= - 24A
I
D
= - 48A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY48P05T IXTA48P05T
IXTP48P05T
IXYS REF: T_48P05T(A2)10-18-10
Fi g . 19. Maximum Tran si en t Th er mal Imp ed an ce
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse W idth - Seconds
Z
(th)JC
- ºC / W
