Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class = 250 V = 60 A = 47 m 250 ns VDSS ID25 IXFH 60N25Q IXFK 60N25Q IXFT 60N25Q RDS(on) t rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M 250 250 V V VGS VGSM Continuous Transient 20 30 V V ID25 IDM IAR TC = 25C TC = 25C, pulse width limited by TJM TC = 25C 60 240 60 A A A EAR EAS TC = 25C TC = 25C 45 1.5 mJ J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 5 V/ns PD TC = 25C 360 W (TAB) TO-268 (D3) ( IXFT) G TO-264 AA (IXFK) G D TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight C 300 TO-247 TO-264 1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. TO-247 TO-264 TO-268 6 10 4 g g g G = Gate S = Source ! Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 1 mA 250 VGS(th) VDS = VGS, ID = 4 mA 2 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 1999 IXYS All rights reserved TJ = 25C TJ = 125C V 4 V 200 nA 50 1 A mA 47 m D (TAB) S TAB = Drain Features ! Symbol (TAB) S C C C -55 ... +150 150 -55 ... +150 TJ TJM Tstg TO-247 AD (IXFH) ! ! ! ! ! Low gate charge International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Avalanche energy and current rated Fast intrinsic Rectifier Advantages ! ! ! Easy to mount Space savings High power density 98630 (6/99) IXFH 60N25Q IXFK 60N25Q IXFT 60N25Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 * ID25, pulse test 22 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 35 S 5100 pF 1000 pF 400 pF 27 ns tr VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 60 ns td(off) RG = 2.0 (External), 80 ns 25 ns 180 nC 39 nC 90 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd RthJC RthCK 0.35 TO-247 TO-264 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM IRM 0.25 0.15 K/W K/W K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 60 A Repetitive; pulse width limited by TJM 240 A IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.5 V 250 ns C A IF = IS -di/dt = 100 A/s, VR = 100 V 1 8 TO-268 Outline Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain TO-247 AD (IXFH) Outline 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025