FEATURES
Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A
LOW ON RESISTANCE rDS(on) ≤ 8Ω
FAST SWITCHING tON ≤ 4ns
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -55 to 150°C
Junction Operating Temperature -55 to 150°C
Maximum Power Dissipation
Continuous Power Dissipation 350mW
Maximum Currents
Gate Current 50mA
Maximum Voltages
Gate to Drain or Source -25V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
J/SST108 J/SST109 J/SST110
SYM. CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS
BVGSS Gate to Source Breakdown Voltage -25 -25 -25 IG = -1µA, VDS = 0V
VGS(off) Gate to Source Cutoff Voltage -3 -10 -2 -6 -0.5 -4 VDS = 5V, ID = 1µA
VGS(F) Gate to Source Forward Voltage 0.7
V
IG = 1mA, VDS = 0V
IDSS Drain to Source Saturation Current2 80 40 10 mA VDS = 15V, VGS = 0V
IGSS Gate Leakage Current -0.01 -3 -3 -3 VGS = -15V, VDS = 0V
IG Gate Operating Current -0.01 VDG = 10V, ID = 10mA
ID(off) Drain Cutoff Current 0.02 3 3 3
nA
VDS = 5V, VGS = -10V
108, 109, 110 8 12 18
rDS(on) Drain to Source
On Resistance 110A 25
Ω V
GS = 0V, VDS ≤ 0.1V
DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
J/SST108 J/SST109 J/SST110
SYM. CHARACTERISTIC TYP MIN MAX MIN MAX MIN MAX UNIT CONDITIONS
gfs Forward Transconductance 17
gos Output Conductance 0.6
mS VDS = 5V, ID = 10mA
f = 1kHz
rds(on) Drain to Source On Resistance 8 12 18 Ω VGS = 0V, ID = 0A
f = 1kHz
SST 60
Ciss Input Capacitance J 60 85 85 85
VDS = 0V, VGS = 0V
f = 1MHz
SST 11
Crss Reverse Transfer
Capacitance J 11 15 15 15
pF
VDS = 0V, VGS = -10V
f = 1MHz
en Equivalent Input Noise Voltage 3.5
nV/√Hz VDS = 5V, ID = 10mA
f = 1kHz
J SERIES
TO-92
BOTTOM VIEW
123
DSG
SST SERIES
1
2
3
SOT-23
TOP VIEW
DG
S
Linear Integrated System
s
J/SST108 SERIES
LOW NOISE SINGLE
N-CHANNEL JFET SWITCH
Linear Integrated System
s
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
SWITCHING CHARACTERISTICS
SYM. CHARACTERISTIC TYP UNIT CONDITIONS
td(on) 3
tr Turn On Time 1
td(off) 4
tf Turn Off Time 18
ns VDD = 1.5V
VGS(H) = 0V
51
Ω
1k
Ω
51
Ω
SWITCHING TEST CIRCUIT
R
L
V
DD
V
GS(H)
V
GS(L)
OUT
SWITCHING CIRCUIT CHARACTERISTICS
SYM. J/SST108 J/SST109 J/SST110
VGS(L) -12V -7V -5V
RL 150Ω 150Ω 150Ω
ID(on) 10mA 10mA 10mA
Linear Integrated System
s
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
n or
1
2
3
SOT-23
DIMENSIONS IN
MILLIMETERS
0.89
1.03
1.78
2.05
1.20
1.40
2.10
2.64
0.37
0.51
2.80
3.04
0.89
1.12
0.013
0.100
0.085
0.180
0.55
123
LS XXX
YYWW
0.170
0.195
0.500
0.610
0.016
0.022
0.095
0.105 0.045
0.055
0.175
0.195 0.130
0.155
0.045
0.060
0.014
0.020
TO-92
DIMENSIONS
IN INCHES.
NOTES
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio
otherwise under any patent or patent rights of Linear Integrated Systems.
