VRRM = IF = 4500 V 2x 650 A ABB HiPakTM DIODE Module 5SLD 0650J450300 Doc. No. 5SYA 1599-03 Apr 12 * Ultra low-loss, rugged SPT+ diode * Smooth switching SPT+ diode for good EMC * Industry standard package * High power density * AlSiC base-plate for high power cycling capability * AlN substrate for low thermal resistance Maximum rated values 1) Parameter Repetitive peak reverse voltage DC forward current Conditions min max Unit VRRM 4500 V IF 650 A Peak forward current IFRM tp = 1ms 1300 A Total power dissipation Ptot Tc = 25 C, per diode 3350 W Surge current IFSM VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave 5300 A Isolation voltage Visol 1 min, f = 50 Hz 7400 V Junction temperature Tvj 125 C Junction operating temperature 1) Symbol Tvj(op) -50 125 C Case temperature Tc -50 125 C Storage temperature Tstg -50 125 C Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SLD 0650J450300 Diode characteristic values Parameter Forward voltage 2) Symbol Conditions VF IF = 650 A Continuous reverse current IR VR = 4500 V Reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr 3) VR = 2800 V, IF = 650 A, VGE = 15 V, di/dt = 4200 A/s L = 150 nH inductive load, switch: 5SNA 0650J450300 Reverse recovery energy Erec Module stray inductance L AC per diode Resistance, terminal-chip RAA'+CC' per diode 2) 3) min Tvj = 25 C 3.1 Tvj = 125 C 3.4 V Tvj = 25 C 10 Tvj = 125 C 16 Tvj = 25 C 830 Tvj = 125 C 930 Tvj = 25 C 560 Tvj = 125 C 930 Tvj = 25 C 1180 Tvj = 125 C 1700 Tvj = 25 C 910 Tvj = 125 C 1610 mA 32 A C ns mJ 36 TC = 25 C 0.2 TC = 125 C 0.3 Unit nH m 4) Parameter Symbol Diode thermal resistance junction to case Diode thermal resistance case to heatsink Conditions min 5) Parameter L W 0.027 x Conditions H Typical , see outline drawing min K/W typ x max x 130 140 48 Clearance distance in air da according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 40 Surface creepage distance ds according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 64 Comparative tracking index CTI Mass Unit 4) x 5) max 0.030 K/W Rth(c-s)DIODE diode per switch, grease = 1W/m x K Symbol Dimensions Mounting torques typ Rth(j-c)DIODE Mechanical properties 5) max Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Thermal properties 4) typ Unit mm mm 26 mm 56 600 Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 10 m 1150 Nm g Thermal and mechanical properties according to IEC 60747 - 15 For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1599-02 Jan 09 page 2 of 5 5SLD 0650J450300 Electrical configuration Outline drawing C C A A 5) Note: all dimensions are shown in mm 5) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for industrial level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1599-03 Apr 12 page 3 of 5 5SLD 0650J450300 Irr 1000 Qrr 1000 RG = 2.2 ohm RG = 4.7 ohm RG = 6.8 ohm 1500 RG = 10 ohm 1500 Erec Erec [mJ],Irr [A], Qrr [C] Erec [mJ], Irr [A], Qrr [C] 2000 RG = 3.3 ohm 2000 VCC = 2800 V VGE = 15 V RG = 2.2 ohm CGE = 150 nF Tvj = 125 C L = 150 nH Erec Qrr VCC = 2800 V IF = 650 A CGE = 150 nF Tvj = 125 C L = 150 nH 500 500 Irr Erec [mJ] = -1.01 x 10-3 x IF2 + 2.74 x I F + 286 0 0 0 325 650 975 1300 0 1625 1 IF [A] Fig. 1 2 3 4 5 di/dt [kA/s] Typical reverse recovery characteristics vs forward current Fig. 2 Typical reverse recovery characteristics vs di/dt 1500 1300 VCC 3600 V di/dt 4 kA/s Tvj = 125 C 975 25 C 125 C IR [A] IF [A] 1000 650 500 325 0 0 0 1 2 3 4 5 0 Typical diode forward characteristics, chip level 2000 3000 4000 5000 VR [V] VF [V] Fig. 3 1000 Fig. 4 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1599-02 Jan 09 page 4 of 5 5SLD 0650J450300 0.1 Analytical function for transient thermal impedance: Z th(j-c) Diode Z th (j-c) (t) = R i (1 - e -t/ i ) 0.01 i =1 DIODE Zth(j-c) [K/W] IGBT, DIODE n 0.001 i 1 2 3 4 Ri(K/kW) 20 7.01 3.46 i(ms) 191.5 22.6 3.1 5 0.0001 0.001 Fig. 5 0.01 0.1 t [s] 1 10 Thermal impedance vs time For detailed information refer to: * 5SYA 2042 Failure rates of HiPak modules due to cosmic rays * 5SYA 2043 Load - cycle capability of HiPaks * 5SYA 2045 Thermal runaway during blocking * 5SYA 2058 Surge currents for IGBT diodes * 5SYA 2093 Thermal design of IGBT Modules * 5SZK 9120 Specification of environmental class for HiPak ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA 1599-03 Apr 12