SPICE MODEL: MMBTH10 MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features * Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators * * High Current Gain Bandwidth Product SOT-23 Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA Range * A C Available in Lead Free/RoHS Compliant Version (Note 3) TOP VIEW B C Dim Min Max A 0.37 0.51 B 1.20 1.40 2.30 2.50 C 0.89 1.03 0.45 0.60 A Mechanical Data E B * * Case: SOT-23 * * * * Moisture Sensitivity: Level 1 per J-STD-020C CC D TOP VIEW D E G Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 B E H E D G GH K J Terminals: Solderable per MIL-STD-202, Method 208 M 1.78 K H L 2.80 J K C Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 2 B Marking (See Page 2): K3H, K3Y M 0.013 0.10 0.903 1.10 0.45 0.61 M 0.085 0.180 a 0 8 E All Dimensions in mm E B Ordering & Date Code Information: See Page 2 L 2.05 3.00 L JC Terminal Connections: See Diagram * * * E B Weight: 0.008 grams (approx.) Maximum Ratings @ TA = 25C unless otherwise specified Symbol MMBTH10 Unit Collector-Base Voltage Characteristic VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 3.0 V Collector Current - Continuous (Note 1) IC 50 mA Power Dissipation (Note 1) Pd 300 mW RqJA 417 C/W Tj, TSTG -55 to +150 C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic @ TA = 25C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Emitter Breakdown Voltage V(BR)CEO 25 3/4 V Collector-Base Breakdown Voltage V(BR)CBO 30 3/4 V IC = 100mA, IE = 0 Emitter-Base Breakdown Voltage V(BR)EBO 3.0 3/4 V IE = 10mA, IC = 0 Collector Cutoff Current ICBO 3/4 100 nA VCB = 25V, IE = 0 Emitter Cutoff Current IEBO 3/4 100 nA VEB = 2V, IC = 0 hFE 60 3/4 3/4 IC = 4mA, VCE = 10.0V Collector-Emitter Saturation Voltage VCE(SAT) 3/4 0.5 V IC = 4mA, IB = 400mA Base-Emitter On Voltage VBE(SAT) 3/4 0.95 V IC = 4mA, VCE = 10.0V OFF CHARACTERISTICS (Note 2) IC = 1mA IB = 0 ON CHARACTERISTICS (Note 2) DC Current Gain SMALL SIGNAL CHARACTERISTICS fT 650 3/4 MHz Collector-Base Capacitance CCB 3/4 0.7 pF VCB = 10V, f = 1.0MHz, IE = 0 Collector-Base Feedback Capacitance CRB 3/4 0.65 pF VCB = 10V, f = 1.0MHz, IE = 0 Rb'Cc 3/4 9 ps VCB = 10V, f = 31.8MHz, IC = 4mA Current-Gain-Bandwidth Product Collector-Base Time Constant Note: VCE = 10V, f = 100MHz, IC = 4mA 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. 3. No purposefully added lead. DS31031 Rev. 7 - 2 1 of 3 www.diodes.com MMBTH10 a Diodes Incorporated Ordering Information Notes: (Note 4) Device Packaging Shipping MMBTH10-7 SOT-23 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to part number above. Example: MMBTH10-7-F. Marking Information YM K3x = Product Type Marking Code, e.g. K3H YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K3x Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 0.20 0.19 0.18 0.17 0.16 0.15 0.14 0.13 0.12 0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 200 TA = 25C TA = 150C TA = -50C 1 1000 10 IC, COLLECTOR CURRENT (mA) Fig. 2 Collector Emitter Saturation Voltage vs. Collector Current TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature DS31031 Rev. 7 - 2 IC IB = 10 2 of 3 www.diodes.com MMBTH10 1000 1.00 VBE(ON), BASE EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN (NORMALIZED) VCE = 5V TA = 150C 100 TA = 25C 10 TA = -50C 0.95 VBE(on) @ VCE = 5V 0.90 0.85 TA = -50C 0.80 0.75 0.70 TA = 25C 0.65 0.60 0.55 TA = 150C 0.50 0.45 0.40 0.1 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs. Collector Current 1 10 1000 IC, COLLECTOR CURRENT (mA) Fig. 4 Base Emitter Voltage vs. Collector Current ft, GAIN BANDWIDTH PRODUCT (MHz) 10000 VCE = 5V 1000 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs Collector Current DS31031 Rev. 7 - 2 3 of 3 www.diodes.com MMBTH10