DS31031 Rev. 7 - 2 1 of 3 MMBTH10
www.diodes.com ãDiodes Incorporated
MMBTH10
NPN SURFACE MOUNT VHF/UHF TRANSISTOR
·Designed for VHF/UHF Amplifier Applications and High
Output VHF Oscillators
·High Current Gain Bandwidth Product
·Ideal for Mixer and RF Amplifier Applications with collector
currents in the 100mA - 30 mA Range
·Available in Lead Free/RoHS Compliant Version (Note 3)
Characteristic Symbol MMBTH10 Unit
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current - Continuous (Note 1) IC50 mA
Power Dissipation (Note 1) Pd300 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 417 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
A
E
JL
TOP VIEW
M
BC
H
G
D
K
C
BE
Mechanical Data
·Case: SOT-23
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Solderable per MIL-STD-202, Method 208
·Terminal Connections: See Diagram
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
·Marking (See Page 2): K3H, K3Y
·Ordering & Date Code Information: See Page 2
·Weight: 0.008 grams (approx.)
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
Electrical Characteristics @ TA= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage V(BR)CEO 25 ¾VIC= 1mA IB= 0
Collector-Base Breakdown Voltage V(BR)CBO 30 ¾VIC= 100mA, IE= 0
Emitter-Base Breakdown Voltage V(BR)EBO 3.0 ¾VIE= 10mA, IC= 0
Collector Cutoff Current ICBO ¾100 nA VCB = 25V, IE= 0
Emitter Cutoff Current IEBO ¾100 nA VEB = 2V, IC= 0
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE 60 ¾¾
IC= 4mA, VCE = 10.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾0.5 V IC= 4mA, IB= 400mA
Base-Emitter On Voltage VBE(SAT) ¾0.95 V IC= 4mA, VCE = 10.0V
SMALL SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product fT650 ¾MHz VCE = 10V, f = 100MHz, IC= 4mA
Collector-Base Capacitance CCB ¾0.7 pF VCB = 10V, f = 1.0MHz, IE= 0
Collector-Base Feedback Capacitance CRB ¾0.65 pF VCB = 10V, f = 1.0MHz, IE= 0
Collector-Base Time Constant Rb’Cc ¾9ps
VCB = 10V, f = 31.8MHz, IC= 4mA
A
E
JL
TOP VIEW
M
BC
H
G
D
K
C
C
B
B
E
E
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
E
B
C
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
SPICE MODEL: MMBTH10
DS31031 Rev. 7 - 2 2 of 3 MMBTH10
www.diodes.com
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Date Code Key
K3x = Product Type Marking Code, e.g. K3H
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K3x
YM
Marking Information
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to part number above.
Example: MMBTH10-7-F.
Device Packaging Shipping
MMBTH10-7 SOT-23 3000/Tape & Reel
(Note 4)
Ordering Information
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
110 1000
V,C
O
LLECT
O
RT
O
EMITTER
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 2 Collector Emitter Saturation Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
0.13
0.14
0.15
0.18
0.17
0.16
0.20
0.19 IC
IB
=10
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Tem
p
erature
A
150
200
250
300
350
0
DS31031 Rev. 7 - 2 3 of 3 MMBTH10
www.diodes.com
1
10
100
1000
110 100
V=5V
CE
h , DC CURRENT GAIN (NORMALIZED)
FE
I , COLLECTOR CURRENT (mA)
Fi
g
. 3, DC Current Gain vs. Collector Current
C
T = 25°C
AT = -50°C
A
T = 150°C
A
0.1 110 1000
V , BASE EMITTER VOLTAGE (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 4 Base Emitter Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.90
0.85
1
.
00
0.95 V@V=5V
BE(on) CE
1
10
100
1000
10000
110 100
f , GAIN BANDWIDTH PRODUCT (MHz)
t
I , COLLECTOR CURRENT (mA)
Fi
g
. 5, Gain Bandwidth Product vs Collector Current
C
V=5V
CE
