BC556 ... BC559
BC556 ... BC559
General Purpose PNP Transistors
Universal-PNP-Transistoren
IC= 100 mA
hFE ~ 120/200/400
Tjmax = 150°C
VCEO = 30...65 V
Ptot = 500 mW
Version 2016-11-25
TO-92 (10D3)
(1)
(2)
Dimensions - Maße [mm]
Typical Applications
Signal processing,
Switching, Amplification
Commercial grade 1)
Typische Anwendungen
Signalverarbeitung,
Schalten, Verstärken
Standardausführung 1)
Features
General Purpose
Three current gain groups
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Universell anwendbar
Drei Stromverstärkungsklassen
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1) Mechanische Daten 1)
(1) Taped in ammo pack
(Raster 2.54)
(2) On request: in bulk
(Raster 1.27, suffix “BK”)
4000
5000
(1) Gegurtet in Ammo-Pack
(Raster 2.54)
(2) Auf Anfrage: Schüttgut
(Raster 1.27, Suffix “BK”)
Weight approx. 0.18 g Gewicht ca.
Case material UL 94V-0 Gehäusematerial
Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen
MSL N/A
Current gain groups
Stromverstärkungsgruppen
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC556A
BC557A
BC558A
BC556B
BC557B
BC558B
BC559B
BC557C
BC558C
BC559C
BC546 ... BC549
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
BC556 BC557 BC558/559
Collector-Emitter-voltage E-B short - VCES 80 V 50 V 30 V
Collector-Emitter-voltage B open - VCEO 65 V 45 V 30 V
Collector-Base-voltage E open - VCBO 80 V 50 V 30 V
Emitter-Base-voltage C open - VEB0 5 V
Power dissipation – Verlustleistung Ptot 500 mW 2)
Collector current – Kollektorstrom (dc) - IC100 mA
Peak Collector current – Kollektor-Spitzenstrom - ICM 200 mA
Peak Base current – Basis-Spitzenstrom - IBM 200 mA
Peak Emitter current – Emitter-Spitzenstrom IEM 200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
1 Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG http://www.diotec.com/ 1
Pb
E
L
V
W
E
E
E
R
o
H
S
16
18
9
2 x 2.54
CB E
2 x 1.27
CB E
4.6
±0.1
4.6
±0.1
min 12.5
BC556 ... BC559
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 1)
- VCE = 5 V, - IC = 10 µA Group A
Group B
Group C
hFE
–
–
–
90
150
270
–
–
–
- VCE = 5 V, - IC = 2 mA Group A
Group B
Group C
hFE
110
200
420
–
–
–
220
450
800
- VCE = 5 V, - IC = 100 mA Group A
Group B
Group C
hFE
–
–
–
120
200
400
–
–
–
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- VCE = 80 V, (B-E short)
- VCE = 50 V, (B-E short)
- VCE = 30 V, (B-E short)
BC556
BC557
BC558 / BC559
- ICES
–
–
–
0.2 nA
0.2 nA
0.2 nA
15 nA
15 nA
15 nA
- VCE = 80 V, Tj = 125°C, (B-E short)
- VCE = 50 V, Tj = 125°C, (B-E short)
- VCE = 30 V, Tj = 125°C, (B-E short)
BC556
BC557
BC558 / BC559
- ICES
–
–
–
–
–
–
4 µA
4 µA
4 µA
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg 1)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA - VCEsat
–
–
80 mV
250 mV
300 mV
650 mV
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 1)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA - VBEsat
–
–
700 mV
900 mV
–
–
Base-Emitter-voltage – Basis-Emitter-Spannung 1)
- VCE = 5 V, - IC = 2 mA
- VCE = 5 V, - IC = 10 mA - VBE
600 mV
–
660 mV
–
750 mV
820 mV
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz fT– 150 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz CCBO – 3.5 pF 6 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEB0 – 10 pF –
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
BC556 ... BC558
BC559 F–
–
2 dB
1 dB
10 dB
4 dB
Thermal resistance junction to ambient
Wärmewiderstand Sperrschicht – Umgebung RthA < 200 K/W 2)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2http://www.diotec.com/ © Diotec Semiconductor AG
