2008. 5. 6 1/2
SEMICONDUCTOR
TECHNICAL DATA
MJE13003HV
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 2
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE AND HIGH SPEED
SWITCHING APPLICATION.
FEATURES
Excellent Switching Times
: ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1A
High Collector Voltage : VCBO=900V.
MAXIMUM RATING (Ta=25 )
TO-126
H
J
MILLIMETERS
C
E
F
G
D
A
B
DIM
A
C
E
F
G
H
J
K
M
OP
N
L
D
1. EMITTER
2. COLLECTOR
3. BASE
K
L
M
N
O
P
8.3 MAX
5.8
0.7
Φ3.2 0.1
3.5
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 0.15
2.3 0.1
0.65 0.15
1.6
3.4 MAX
B
123
+
_
+
_
+
_
15.50 0.5
+
_
+
_
+
_
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 900 V
Collector-Emitter Voltage VCEO 530 V
Emitter-Base Voltage VEBO 9 V
Collector Current
DC IC1.5
A
Pulse ICP 3
Base Current IB0.75 A
Collector Power Dissipation (Tc=25 ) PC20 W
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
*Note : hFE Classification R:20 35, O:25 40
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Emitter Cut-off Current IEBO VEB=9V, IC=0 - - 10 A
DC Current Gain
hFE(1) VCE=10V, IC=10 A15 - 40
*hFE(2) VCE=10V, IC=0.4A 20 - 40
hFE(3) VCE=10V, IC=1A 6 - -
Collector-Emitter
Saturation Voltage VCE(sat)
IC=0.5A, IB=0.1A - - 0.8
V
IC=1.5A, IB=0.5A - - 2.5
Base-Emitter
Saturation Voltage VBE(sat)
IC=0.5A, IB=0.1A - - 1
V
IC=1A, IB=0.25A - - 1.2
Collector Output Capacitance Cob VCB=10V, f=0.1MHz, IE=0 - 21 - pF
Transition Frequency fTVCE=10V, IC=0.1A 4 - - MHz
Turn-On Time ton
IB1
125Ω
B1
I
CC
V =125V
IB2
IB2
300µS
I =I =0.2A
2%
B1 B2
OUTPUT
DUTY CYCLE
INPUT
<
=
- 1.1 - S
Storage Time tstg - 3.0 - S
Fall Time tf- 0.7 - S
2008. 5. 6 2/2
MJE13003HV
Revision No : 2
STATIC CHARACTERIC
0
0
51342
0.4
0.8
1.2
1.8
2.0
COLLECTOR CURRENT IC (A)
COLLECTOR EMITTER VOLTAGE VCE (V)
COLLECTOR EMITTER VOLTAGE VCE (V)
Ib=500mA
Ib=50mA
Ib=100mA
Ib=0mA
Ib=400mA
Ib=200mA
Ib=300mA
SATURATION VOLTAGE
VBE(sat), VCE(sat) (V)
0.01
COLLECTOR CURRENT IC (A)
VCE(sat) vs. VBE(sat)
0.1
1
10
100
0.1 1 10
IC=4Ib
VBE(sat)
VCE(sat)
COLLETOR CURRENT IC (A)
1
SAFE OPERATING AREA
0.01
0.1
1
10
10 100 1000
Ic max (Pulse)
Ic max (DC)
5ms
1ms
10µs
100µs
POWER DISSIPATION PC (W)
0
0
PC - Ta
DC CURRENT GAIN hFE
0.01
COLLECTOR CURRENT IO (A)
DC CURRENT GAIN
Tstg, Tf(µS), TIME
SWITCHING TIME
1
10
100
0.1 1 10
50 100 150 200
0.25
0.5
0.75
1
1.1
AMBIENT TEMPERATURE Ta ( C)
1.25
VCE=10V
0.1
1
1
10
100
0.1
COLLECTOR CURRENT IC (A)
tstg
tf
Tc=Ta INFINITE HEAT SINK
