HEXFET® MOSFET technology is the key to IR Hirel advanced
line of power MOSFET transistors. The efficient geometry and
unique processing of this latest “State of the Art” design
achieves: very low on-state resistance combined with high trans
conductance; superior reverse energy and diode recovery dv/dt
capability.
The HEXFET transistors also feature all of the well established
advantages of MOSFETs such as voltage control, very fast
switching and temperature stability of the electrical parameters.
They are well suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers
and high energy pulse circuits.
Absolute Maximum Ratings
Symbol Parameter Value Units
ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current 30
A
ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current 19
IDM @ TC = 25°C Pulsed Drain Current 120
PD @ TC = 25°C Maximum Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 500 mJ
IAR Avalanche Current 30 A
EAR Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery 5.0 V/ns
TJ Operating Junction and
°C
TSTG Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5 (Typical) g
-55 to + 150
PD- 90338F
IRF250
JANTX2N6766
JANTXV2N6766
1 2019-07-01
Product Summary
Part Number BVDSS I
D
IRF250 200V 30A
RDS(on)
0.085
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE -TO-3 (TO-204AE)
Description
For footnotes refer to the page 2.
International Rectifier HiRel Products, Inc.
Features
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
TO-3 (TO-204AE)
200V, N-CHANNEL
REF: MIL-PRF-19500/543
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International Rectifier HiRel Products, Inc.
Source-Drain Diode Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) ––– ––– 30
ISM Pulsed Source Current (Body Diode) ––– ––– 120
VSD Diode Forward Voltage ––– ––– 1.9 V TJ = 25°C,IS = 30A, VGS = 0V
trr Reverse Recovery Time ––– ––– 950 ns TJ = 25°C ,IF = 30A,VDD 30V
Qrr Reverse Recovery Charge ––– ––– 9.0 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L= 1.11mH, Peak IL = 30A,VGS = 10V.
ISD 30A, di/dt 190A/µs, VDD 200V, TJ 150°C.Suggested RG = 2.35Ω
Pulse width 300 µs; Duty Cycle 2%
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 1.0mA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.29 ––– V/°C Reference to 25°C, ID = 1.0mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.085 VGS = 10V, ID2 = 19A
––– ––– 0.090 VGS = 10V, ID1 = 30A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
IDSS Zero Gate Voltage Drain Current ––– ––– 25 µA VDS = 160V, VGS = 0V
––– ––– 250 VDS = 160V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Leakage Forward ––– ––– 100 nA VGS = 20V
Gate-to-Source Leakage Reverse ––– ––– -100 VGS = -20V
QG Total Gate Charge 55 ––– 115
nC
ID1 = 30A
QGS Gate-to-Source Charge 8 ––– 22 VDS = 100V
QGD Gate-to-Drain (‘Miller’) Charge 30 ––– 60 VGS = 10V
td(on) Turn-On Delay Time ––– ––– 35
ns
VDD = 100V
tr Rise Time ––– ––– 190 ID1 = 30A
td(off) Turn-Off Delay Time ––– ––– 170 RG = 2.35
tf Fall Time ––– ––– 130 VGS = 10V
Ls +LD Total Inductance ––– 6.1 ––– nH
Measured from Drain lead (6mm /
0.25 in from package) to Source
lead (6mm/ 0.25 in from package)
Ciss Input Capacitance ––– 3500 –––
pF
VGS = 0V
Coss Output Capacitance ––– 700 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz
Thermal Resistance
Symbol Parameter Min. Typ. Max. Units
RJC Junction-to-Case ––– ––– 0.83
°C/W
RJA Junction-to-Ambient (Typical socket mount) ––– ––– 30
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JANTX2N6766/JANTXV2N6766
International Rectifier HiRel Products, Inc.
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
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JANTX2N6766/JANTXV2N6766
International Rectifier HiRel Products, Inc.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 8. Maximum Safe Operating Area
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
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International Rectifier HiRel Products, Inc.
Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
tp
V
(BR)DSS
I
AS
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JANTX2N6766/JANTXV2N6766
International Rectifier HiRel Products, Inc.
Case Outline and Dimensions - TO-204AE (Modified TO-3)
www.infineon.com/irhirel
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555
Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
San Jose, California 95134, USA Tel: +1 (408) 434-5000
Data and specifications subject to change without notice.
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JANTX2N6766/JANTXV2N6766
International Rectifier HiRel Products, Inc.
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
