GP2M005A050CG GP2M005A050PG Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance N-channel MOSFET D-PAK BVDSS ID RDS(on) 500V 4.5A < 1.5W I-PAK Device Package Marking Remark GP2M005A050CG D-PAK GP2M005A050CG RoHS GP2M005A050PG I-PAK GP2M005A050PG RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGS 30 V 4.5 A 3.27 A Continuous Drain Current TC = 25 ID TC = 100 Pulsed Drain Current (Note 1) IDM 18 A Single Pulse Avalanche Energy (Note 2) EAS 254 mJ Repetitive Avalanche Current (Note 1) IAR 4.5 A Repetitive Avalanche Energy (Note 1) EAR 9.84 mJ 98.4 W 0.78 W/ dv/dt 4.5 V/ns TJ, TSTG -55~150 TL 300 Symbol Value Unit Maximum Thermal resistance, Junction-to-Case RqJC 1.27 /W Maximum Thermal resistance, Junction-to-Ambient RqJA 110 /W Power Dissipation TC = 25 Derate above 25 Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds PD * Limited only by maximum junction temperature Thermal Characteristics Parameter October 2012 : Rev0 www.GPTechGroup.com 1/6 GP2M005A050CG GP2M005A050PG Electrical Characteristics : TC=25, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 A 500 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V -- -- 1 A VDS = 400 V, TC = 125C -- -- 10 A Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 A Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 A VGS(th) VDS = VGS, ID = 250 A 3 -- 5 V RDS(on) VGS = 10 V, ID = 2.25 A -- 1.2 1.5 W gFS VDS = 30 V, ID = 2.25 A -- 6 -- S Input Capacitance Ciss VDS = 25 V, VGS = 0 V, -- 645 -- pF Output Capacitance Coss f = 1.0 MHz -- 78 -- pF Reverse Transfer Capacitance Crss -- 11 -- pF OFF ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) DYNAMIC SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge Gate-Drain Charge (Note 4,5) (Note 4,5) td(on) VDD = 250 V, ID = 4.5 A, -- 19 -- ns tr RG = 25 -- 28 -- ns td(off) -- 49 -- ns tf -- 19 -- ns Qg VDS = 400 V, ID = 4.5 A, -- 15 -- nC Qgs VGS = 10 V -- 3 -- nC -- 7 -- nC Qgd SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4) IS ---- -- -- 4.5 A ISM ---- -- -- 18 A VSD VGS = 0 V, IS = 4.5 A -- -- 1.5 V trr VGS = 0 V, IS = 4.5 A -- 260 -- ns Qrr dIF / dt = 100 A/s -- 1.4 -- C Note : 1. Repeated rating : Pulse width limited by safe operating area 2. L=22.6mH, I AS = 4.5A, VDD = 50V, RG = 25, Starting TJ= 25 3 I SD 4.5A, di/dt 200A/s , VDD BVDS, Starting TJ= 25 4. Pulse Test :Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics October 2012 : Rev0 www.GPTechGroup.com 2/6 GP2M005A050CG GP2M005A050PG 16 VDS = 30V 250 s Pulse Test Top VGS=15.0V Bottom 10 Drain Current, ID [A] Drain Current, ID [A] 12 10.0V 9.0V 8.0V 7.0V 6.0V 5.5V 8 1. TC = 25 4 150 1 0.1 0 5 10 15 20 2 4 Drain-Source Voltage, VDS [V] 6 8 10 1.5 2.0 Gate-Source Voltage, VGS [V] 16 2.5 VGS = 0V TJ = 25 Reverse Drain Current, IDR [A] Drain-Source On-Resistance RDS(ON) [] 2. 250s Pulse Test 0 2.0 VGS = 10V 1.5 VGS = 20V 1.0 0 3 6 9 12 250s Pulse Test 12 150 15 25 8 4 0 0.0 0.5 0.5 1.0 Source-Drain Voltage, VSD [V] Drain Current,ID [A] 12 1200 Ciss = Cgs + Cgd (Cds = shorted) ID = 4.5A Coss = Cds + Cgd Crss = Cgd VGS = 0 V f = 1 MHz Ciss 600 Coss Crss 300 Gate-Source Voltage, VGS [V] 10 900 Capacitance [pF] -55 25 VDS = 250V VDS = 100V 8 VDS = 400V 6 4 2 0 0 -1 10 0 10 1 10 0 October 2012 : Rev0 5 10 15 20 Total Gate Charge, QG [nC] Drain-Source Voltage, VDS [V] www.GPTechGroup.com 3/6 GP2M005A050CG GP2M005A050PG 3.0 VGS = 10 V VGS = 0 V 1.15 ID = 250 A ID = 2.25 A 2.5 Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source Breakdown Voltage BVDSS, (Normalized) 1.20 1.10 2.0 1.05 1.00 1.5 0.95 1.0 0.90 0.5 0.85 0.80 -80 -40 0 40 80 120 0.0 -80 160 o -40 0 40 80 120 160 120 160 o Junction Temperature,TJ [ C] Junction Temperature, TJ [ C] 1.5 5 Gate Threshold Voltage VTH, (Normalized) Drain Current, ID [A] 4 3 2 1.0 0.5 1 VDS = VGS ID = 250 A 0 25 50 75 100 125 Case Temperature, TC [ 0.0 -80 150 -40 0 40 80 o ] Junction Temperature, TJ [ C] 1 2 10 10 Operation in This Area is Limited by R DS(on) 10 us Drain Current, ID [A] Transient thermal impedance ZthJC(t) 100 us 1 10 1 ms 10 ms 100 ms 0 10 DC -1 10 o TC = 25 C o TJ = 150 C 0 Duty=0.5 10 0.2 0.1 PDM 0.05 -1 10 t 0.02 T 0.01 Duty = t/T ZthJC(t) = 1.27 single pulse /W Max. -2 10 Single Pulse -2 10 0 1 10 10 2 10 3 10 -5 10 Drain-Source Voltage, VDS [V] October 2012 : Rev0 -4 10 -3 10 -2 10 -1 10 0 1 10 10 Pulse Width, t [sec] www.GPTechGroup.com 4/6 GP2M005A050CG GP2M005A050PG TO-252 (D-PAK) MECHANICAL DATA October 2012 : Rev0 www.GPTechGroup.com 5/6 GP2M005A050CG GP2M005A050PG TO-251 (I-PAK) MECHANICAL DATA Disclaimer : Global Power Technologies Group reserves the right to make changes without notice to products herein to improve reliability, performance, or design. The information given in this document is believed to be accurate and reliable. However, it shall in no event be regarded as a guarantee of conditions and characteristics. With respect to any information regarding the application of the device, Global Power Technologies Group hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of patent rights of any third party. October 2012 : Rev0 www.GPTechGroup.com 6/6