
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
metal envelope with integrated efficiency diode,prim-
arily for use in horizontal deflection circuites of colour
television receivers
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter voltage peak value V
= 0V 1500 V
Collector-emitter voltage (open base) 600 V
Collector current (DC) 5A
Collector current peak value 7.5 A
Total power dissipation T
25 125 W
Collector-emitter saturation voltage IC = 4.5A; IB = 2.0A 1.0 V
Collector saturation current f = 16KHz A
Diode forward voltage I
= 4.5A 1.5 V
Fall time IC=4.5A,IB1=-1/2IB2=1.8A,VCC=100V 1.0 s
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter voltage peak value V
= 0V 1500 V
Collector-emitter voltage (open base) 600 V
Emitter-base voltage(open collector) 5V
Collector current (DC) 5A
Base current (DC) 2A
Base current peak value 4A
Total power dissipation Tmb 25 125 W
Storage temperature -55 150
Junction temperature 150
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter cut-off current V
= 0V; V
= V
1.0 mA
VBE = 0V; VCE = VCESMmax2.0 mA
T
= 125
Collector-emitter sustaining voltage I
= 0A; I
= 100mA V
L = 25mH
Collector-emitter saturation voltages IC = 4.5A; IB = 2.0A 1.0 V
Base-emitter satuation voltage I
= 4.5A; I
= 2A 1.5 V
DC current gain I
= 1.0A; V
= 5V 830
Diode forward voltage IF = 4.5A 1.5 V
Transition frequency at f = 1MHz I
= 0.1A; V
= 10V 3MHz
Collector capacitance at f = 1MHz V
= 10V pF
Switching times(16KHz line deflecton circuit) IC=4.5A,IB1=-1/2IB2=1.8A,VCC=100V 8.0 s
Turn-off storage time Turn-off fall time C=4.5A,IB1=-1/2IB2=1.8A,VCC=100V 1.0 s
ELECTRICAL CHARACTERISTICS
TO-3
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
SILICON DIFFUSED POWER TRANSISTOR