LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250 µAdc) V(BR)DSS 100 – – Vdc
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 100 Vdc) TJ = 25°C
TJ = 125°C
IDSS –
––
–15
60
µAdc
Gate–Body Leakage Current
(VGS = 20 Vdc, VDS = 0) IGSS – – 50 nAdc
ON CHARACTERISTICS (Note 4.)
Gate Threshold Voltage
(VDS = VGS,I
D = 1.0 mAdc) VGS(th) 0.8 – 2.0 Vdc
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 100 mAdc) rDS(on) – 5.0 6.0 Ω
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc) gfs 80 – – mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss – 20 – pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss – 9.0 – pF
Reverse T ransfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss – 4.0 – pF
SWITCHING CHARACTERISTICS(4)
Turn–On Delay Time (VCC = 30 Vdc, IC = 0.28 Adc, td(on) – 20 – ns
Turn–Off Delay Time
,
.
,
VGS = 10 Vdc, RGS = 50 Ω)td(off) – 40 – ns
REVERSE DIODE
Diode Forward On–Voltage
(ID = 0.34 Adc, VGS = 0 Vdc) VSD – – 1.3 V
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
LBSS123LT1G , S-LBSS123LT1G
Rev .A 2/4