BC807-40-7-F - DIODES INC.

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45V PNP SMALL SIGNAL TRANSISTOR IN SOT23

Features

 Ideally Suited for Automatic Insertion

 Epitaxial Planar Die Construction

 Complementary NPN Types Available (BC817)

 For switching and AF Amplifier Applications

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. "Green" Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Capable (Note 4)

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding Compound

 UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

 Weight 0.008 grams (approximate)

Ordering Information

(Notes 5)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel

BC807-16-7-F AEC-Q101 K5A 7 8 3,000

BC807-25-7-F AEC-Q101 K5B 7 8 3,000

BC807-40-7-F AEC-Q101 K5C 7 8 3,000

BC807-40-13-F AEC-Q101 K5C 13 8 10,000

BC807-40Q-7-F Automotive K5C 7 8 3,000

BC807-40Q-13-F Automotive K5C 13 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the

same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016 2017

Code X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View

SOT23

Device Symbol Top View

Out

XXX = Product Type Marking Code (See table above)

YM = Date Code Marking

Y = Year ex: X = 2010

M = Month ex: 9 = September

XXX Y

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Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Collector-Base Voltage VCBO -50 V

Collector-Emitter Voltage VCEO -45 V

Emitter-Base Voltage VEBO -5.0 V

Continuous Collector Current IC -0.5 A

Peak Collector Current ICM -1.0 A

Peak Base Current IBM -200 mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Power Dissipation (Note 6) PD

310 mW

(Note 7) 350

Thermal Resistance, Junction to Ambient (Note 6) RθJA 403 °C/W

(Note 7) 357

Thermal Resistance, Junction to Leads (Note 8) RθJL 350 °C/W



Operating and Storage Temperature Range TJ,TSTG -55 to +150 °C

ESD Ratings (Note 9)

Characteristic Symbol Value Unit JEDEC Class

Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B

Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C

Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition; device

measured when operating in steady state condition.

7. Same as Note 6, except the device is mounted on 15mm X 15mm FR4 PCB.

8. Thermal resistance from junction to solder-point (at the end of the leads).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

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Thermal Characteristics and Derating Information

0 25 50 75 100 125 150

0.0

0.1

0.2

0.3

0.4

Derating Curve

Temperature (°C)

Max Power Dissipation (W)

100µ 1m 10m 100m 1 10 100 1k

100

150

200

250

300

350

400

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s)

10m 100m 1 10 100 1k

0.1

Single Pulse. Tamb=25°C

Pulse Power Dissipation

Pulse Width (s)

Max Power Dissipation (W)

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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage BVCBO -50 — — V IC = -100µA

Collector-Emitter Breakdown Voltage BVCEO -45 — — V IC = -10mA

Emitter-Base Breakdown Voltage BVEBO -5 — — V IC = -100µA

Collector-Emitter Cutoff Current ICES — — -100

-5.0

µA

VCE = -45V

VCE = -25V, TJ = +150°C

Emitter-Base Cutoff Current IEBO — — -100 nA VEB = -5.0V

DC Current Gain (Note 10)

BC807-16

BC807-25

BC807-40 hFE

100

160

250 —

250

400

600 —

VCE = -1.0V, IC = -100mA

BC807-16

BC807-25

BC807-40

100

170

— VCE = -1.0V, IC = -300mA

Collector-Emitter Saturation Voltage (Note 10) VCE(SAT) — — -0.7 V IC = -500mA, IB = -50mA

Base-Emitter Voltage (Note 10) VBE — — -1.2 V VCE = -1.0V, IC = -300mA

Gain Bandwidth Product fT 100 — — MHz VCE = -5.0V, IC = -10mA,

f = 50MHz

Collector-Base Capacitance CCBO — — 12 pF VCB = -10V, f = 1.0MHz

Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

100

200

300

400

500

012

-I ,

)

-V , COLLECTOR-EMITTER VOLTAGE (V)

Figure 1

Typical Collector Current vs. Collector-Emitter Voltage

100

01020

-I ,

LLE

(mA)

-V , COLLECTOR-EMITTER VOLTAGE (V)

Figure 2 Typical Collector Current vs. Collector-Emitter Voltage

0.1

0.2

0.3

0.4

0.5

110

100 1,000

-V ,

LLE

-E

SATURATION VOLTAGE (V)

CE(SAT)

-I , COLLECTOR CURRENT (mA)

Figure 3 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

-I / -I = 10

150 C

25 C

-50 C

0.1

100

1,000

0.1 1 10 100 1,000

h, D

AIN

-I , COLLECTOR CURRENT (mA)

Figure 4 Typical DC Current Gain vs. Collector Current

-V = 1V

150 C

25 C

-50 C

100

1,000

1 10 100 1,000

IN-B

NDWIDTH

T (

Hz)

-I , COLLECTOR CURRENT (mA)

Figure 5 Typical Gain-Bandwidth Product vs. Collector Current

T = 25C

f = 20MHz

-V = 5.0V

1.0V

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

SOT23

Dim Min Max Typ

A 0.37 0.51 0.40

B 1.20 1.40 1.30

C 2.30 2.50 2.40

D 0.89 1.03 0.915

F 0.45 0.60 0.535

G 1.78 2.05 1.83

H 2.80 3.00 2.90

J 0.013 0.10 0.05

K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11

 0° 8° -

All Dimensions in mm

Dimensions Value (in mm)

Z 2.9

X 0.8

Y 0.9

C 2.0

E 1.35

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.