© Semiconductor Components Industries, LLC, 2016
September, 2016 − Rev. 20 1Publication Order Number:
MJD44H11/D
MJD44H11(NPN),
MJD45H11(PNP)
Complementary Power
Transistors
DPAK for Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
•Lead Formed for Surface Mount Application in Plastic Sleeves
(No Suffix)
•Straight Lead Version in Plastic Sleeves (“−1” Suffix)
•Electrically Similar to Popular D44H/D45H Series
•Low Collector Emitter Saturation Voltage
•Fast Switching Speeds
•Complementary Pairs Simplifies Designs
•Epoxy Meets UL 94 V−0 @ 0.125 in
•NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25_C, common for NPN and PNP, minus
sign, “−”, for PNP omitted, unless otherwise noted)
Rating Symbol Max Unit
Collector−Emitter Voltage VCEO 80 Vdc
Emitter−Base Voltage VEB 5 Vdc
Collector Current − Continuous IC8 Adc
Collector Current − Peak ICM 16 Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD20
0.16 W
W/°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD1.75
0.014 W
W/°C
Operating and Storage Junction
Temperature Range TJ, Tstg −55 to +150 °C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS, 20 WATTS
IPAK
CASE 369D
STYLE 1
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAMS
A = Assembly Location
Y = Year
WW = Work Week
J4xH11 = Device Code
x = 4 or 5
G = Pb−Free Package
123
4
AYWW
J4
xH11G
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
123
4
AYWW
J4
xH11G
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IPAKDPAK
COMPLEMENTARY
1
BASE
3
EMITTER
COLLECTOR
2, 4
1
BASE
3
EMITTER
COLLECTOR
2, 4
DPAK
CASE 369G
STYLE 1
123
4
MJD44H11 (NPN), MJD45H11 (PNP)
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 6.25 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 71.4 °C/W
Lead Temperature for Soldering TL260 °C
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS
(TA = 25_C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mA, IB = 0) VCEO(sus) 80 − − Vdc
Collector Cutoff Current
(VCE = Rated VCEO, VBE = 0) ICES − − 1.0 mA
Emitter Cutoff Current
(VEB = 5 Vdc) IEBO − − 1.0 mA
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.4 Adc) VCE(sat) − − 1 Vdc
Base−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc) VBE(sat) − − 1.5 Vdc
DC Current Gain
(VCE = 1 Vdc, IC = 2 Adc)
(VCE = 1 Vdc, IC = 4 Adc)
hFE 60
40 −
−−
−
−
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, ftest = 1 Mhz)
MJD44H11
MJD45H11
Ccb
−
−45
130 −
−
pF
Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 Mhz)
MJD44H11
MJD45H11
fT
−
−85
90 −
−
MHz
SWITCHING TIMES
Delay and Rise Times
(IC = 5 Adc, IB1 = 0.5 Adc)
MJD44H11
MJD45H11
td + tr
−
−300
135 −
−
ns
Storage Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJD44H11
MJD45H11
ts
−
−500
500 −
−
ns
Fall Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJD44H11
MJD45H11
tf
−
−140
100 −
−
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
MJD44H11 (NPN), MJD45H11 (PNP)
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t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
r(t), EFFECTIVE TRANSIENT THERMAL
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
RESISTANCE (NORMALIZED)
0.7
Figure 1. Thermal Response
0.5
0.1
0.05
0.03
0.02
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500
0.2
SINGLE PULSE
D = 0.5
0.1
0.02
0.01
0.05
IC, COLLECTOR CURRENT (AMP)
20
1
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.02 3 100
2
0.5
5
0.1
THERMAL LIMIT @ TC = 25°C
WIRE BOND LIMIT
5 7 20 7010
100ms
dc
0.05
0.3
1
3
10
5030
Figure 2. Maximum Forward Bias
Safe Operating Area
1ms
500ms
5ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150_C. TJ(pk) may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
25
25
T, TEMPERATURE (°C)
050 75 100 125 150
20
15
10
5
PD, POWER DISSIPATION (WATTS)
2.5
0
2
1.5
1
0.5
TATC
Figure 3. Power Derating
TC
TA
SURFACE
MOUNT
MJD44H11 (NPN), MJD45H11 (PNP)
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4
Figure 4. MJD44H11 DC Current Gain Figure 5. MJD45H11 DC Current Gain
IC, COLLECTOR CURRENT (A)
1010.10.01
10
100
1000
Figure 6. MJD44H11 DC Current Gain Figure 7. MJD45H11 DC Current Gain
Figure 8. MJD44H11 Saturation Voltage
VCE(sat)
Figure 9. MJD45H11 Saturation Voltage
VCE(sat)
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
1010.10.01
0
0.1
0.2
0.3
0.4
0.6
0.7
0.8
hFE, DC CURRENT GAINVCE(sat), COLL−EMIT SATURATION VOLTAGE (V)
150°C
−55°C
25°C
VCE = 1 V
IC, COLLECTOR CURRENT (A)
1010.10.01
10
100
1000
hFE, DC CURRENT GAIN
150°C
−55°C
25°C
VCE = 1 V
IC, COLLECTOR CURRENT (A)
1010.10.01
10
100
1000
hFE, DC CURRENT GAIN
150°C
−55°C
25°C
VCE = 4 V
IC, COLLECTOR CURRENT (A)
1010.10.01
10
100
1000
hFE, DC CURRENT GAIN
150°C
−55°C
25°C
VCE = 4 V
0.5
150°C
−55°C
25°C
IC/IB = 20
IC, COLLECTOR CURRENT (A)
1010.10.01
0
0.1
0.2
0.3
0.4
0.6
0.7
0.8
VCE(sat), COLL−EMIT SATURATION VOLTAGE (V)
0.5
150°C
−55°C
25°C
IC/IB = 20
MJD44H11 (NPN), MJD45H11 (PNP)
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Figure 10. MJD44H11 Saturation Voltage
VBE(sat)
Figure 11. MJD45H11 Saturation Voltage
VBE(sat)
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
1010.10.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 12. MJD44H11 Collector Saturation
Region Figure 13. MJD45H11 Collector Saturation
Region
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
10,00010001001010.1
0
0.4
0.2
0.6
1.0
1.4
1.8
2.0
Figure 14. MJD44H11 Capacitance Figure 15. MJD45H11 Capacitance
VR, REVERSE VOLTAGE (V)
1001010.1
10
100
1000
VBE(sat), BASE−EMIT SATURATION
VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)C, CAPACITANCE (pF)
150°C
−55°C
25°C
IC/IB = 20
1010.10.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VBE(sat), BASE−EMIT SATURATION
VOLTAGE (V)
150°C
−55°C
25°C
IC/IB = 20
0.8
1.2
1.6
TA = 25°C
IC = 8 A
1 A IC = 3 A
0.5 AIC = 0.1 A
10,00010001001010.1
0
0.4
0.2
0.6
1.0
1.4
1.8
2.0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
0.8
1.2
1.6
TA = 25°C
Cob
VR, REVERSE VOLTAGE (V)
1001010.1
10
100
1000
C, CAPACITANCE (pF)
Cob
IC = 8 A
1 A IC = 3 A
0.5 A
IC = 0.1 A
MJD44H11 (NPN), MJD45H11 (PNP)
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Figure 16. MJD44H11
Current−Gain−Bandwidth Product Figure 17. MJD45H11
Current−Gain−Bandwidth Product
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
1010.10.01
10
100
1010.10.01
10
100
fTau, CURRENT−GAIN−BANDWIDTH
PRODUCT
fTau, CURRENT−GAIN−BANDWIDTH
PRODUCT
VCE = 2 V VCE = 2 V
MJD44H11 (NPN), MJD45H11 (PNP)
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ORDERING INFORMATION
Device Package Type Package Shipping†
MJD44H11G DPAK
(Pb−Free) 369C 75 Units / Rail
NJVMJD44H11G DPAK
(Pb−Free) 369C 75 Units / Rail
MJD44H11−1G DPAK−3
(Pb−Free) 369D 75 Units / Rail
MJD44H11RLG DPAK
(Pb−Free) 369C 1,800 / Tape & Reel
NJVMJD44H11RLG* DPAK
(Pb−Free) 369C 1,800 / Tape & Reel
MJD44H11T4G DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
NJVMJD44H11T4G* DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
MJD44H11T5G DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
MJD45H11G DPAK
(Pb−Free) 369C 75 Units / Rail
NJVMJD45H11G* DPAK
(Pb−Free) 369C 75 Units / Rail
MJD45H11−1G DPAK−3
(Pb−Free) 369D 75 Units / Rail
MJD45H11RLG DPAK
(Pb−Free) 369C 1,800 / Tape & Reel
NJVMJD45H11RLG* DPAK
(Pb−Free) 369C 1,800 / Tape & Reel
MJD45H11T4G DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
NJVMJD45H11T4G* DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
NJVMJD44H11D3T4G* DPAK
(Pb−Free) 369G 2,500 / Tape & Reel
NJVMJD45H11D3T4G* DPAK
(Pb−Free) 369G 2,500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
MJD44H11 (NPN), MJD45H11 (PNP)
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8
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
b
D
E
b3
L3
L4b2
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.028 0.045 0.72 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
12 3
4
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
A1
H
DET AIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
eBOTTOM VIEW
Z
BOTTOM VIEW
SIDE VIEW
TOP VIEW
ALTERNATE
CONSTRUCTIONS
NOTE 7
Z
MJD44H11 (NPN), MJD45H11 (PNP)
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9
PACKAGE DIMENSIONS
123
4
V
SA
K
−T−
SEATING
PLANE
R
B
F
GD3 PL
M
0.13 (0.005) T
C
E
JH
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.090 BSC 2.29 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.350 0.380 8.89 9.65
R0.180 0.215 4.45 5.45
S0.025 0.040 0.63 1.01
V0.035 0.050 0.89 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
Z0.155 −−− 3.93 −−−
IPAK
CASE 369D
ISSUE C
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
0.180 BSC
DPAK−3, SURFACE MOUNT
CASE 369G
ISSUE O
D
A
K
B
R
V
F
G
2 PL
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.22
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G4.58 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.102 0.114 2.60 2.89
R0.180 0.215 4.57 5.45
V0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.13 (0.005) T
L0.090 BSC 2.29 BSC
U0.020 −−− 0.51 −−−
123
4
E
C
U
J
H
−T− SEATING
PLANE
Z
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
L
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