MJD44H11(NPN), MJD45H11(PNP) Complementary Power Transistors DPAK for Surface Mount Applications www.onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS, 20 WATTS Features * Lead Formed for Surface Mount Application in Plastic Sleeves * * * * * * * * (No Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Electrically Similar to Popular D44H/D45H Series Low Collector Emitter Saturation Voltage Fast Switching Speeds Complementary Pairs Simplifies Designs Epoxy Meets UL 94 V-0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COMPLEMENTARY COLLECTOR 2, 4 1 BASE COLLECTOR 2, 4 1 BASE 3 EMITTER 3 EMITTER 4 4 4 MAXIMUM RATINGS (TA = 25_C, common for NPN and PNP, minus sign, "-", for PNP omitted, unless otherwise noted) Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous 1 2 1 Symbol Max Unit 3 VCEO 80 Vdc VEB 5 Vdc DPAK CASE 369C STYLE 1 IC 8 Adc Collector Current - Peak ICM 16 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 20 0.16 W W/C Total Power Dissipation (Note 1) @ TA = 25C Derate above 25C PD 1.75 0.014 W W/C Operating and Storage Junction Temperature Range TJ, Tstg -55 to +150 C 1 2 2 3 DPAK CASE 369G STYLE 1 3 IPAK CASE 369D STYLE 1 MARKING DIAGRAMS ESD - Human Body Model HBM 3B V ESD - Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. AYWW J4 xH11G AYWW J4 xH11G DPAK A Y WW J4xH11 G IPAK = = = = Assembly Location Year Work Week Device Code x = 4 or 5 = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. (c) Semiconductor Components Industries, LLC, 2016 September, 2016 - Rev. 20 1 Publication Order Number: MJD44H11/D MJD44H11 (NPN), MJD45H11 (PNP) THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction-to-Case Characteristic RqJC 6.25 C/W Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 71.4 C/W TL 260 C Unit Lead Temperature for Soldering 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TA = 25_C, common for NPN and PNP, minus sign, "-", for PNP omitted, unless otherwise noted) Characteristic Symbol Min Typ Max 80 - - - - 1.0 - - 1.0 - - 1 - - 1.5 60 40 - - - - OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 30 mA, IB = 0) VCEO(sus) Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES Emitter Cutoff Current (VEB = 5 Vdc) IEBO Vdc mA mA ON CHARACTERISTICS Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) VCE(sat) Base-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) VBE(sat) DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) (VCE = 1 Vdc, IC = 4 Adc) Vdc Vdc hFE - DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1 Mhz) MJD44H11 MJD45H11 Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 Mhz) MJD44H11 MJD45H11 Ccb pF - - 45 130 - - fT MHz - - 85 90 - - SWITCHING TIMES Delay and Rise Times (IC = 5 Adc, IB1 = 0.5 Adc) MJD44H11 MJD45H11 td + tr ns - - Storage Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) MJD44H11 MJD45H11 ts Fall Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) MJD44H11 MJD45H11 tf 300 135 - - ns - - 500 500 - - ns - - 140 100 - - Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJD44H11 (NPN), MJD45H11 (PNP) 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 RqJC(t) = r(t) RqJC RqJC = 6.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.1 0.1 0.07 0.05 0.05 0.02 0.01 0.03 0.02 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 30 50 100 200 300 500 1k Figure 1. Thermal Response IC, COLLECTOR CURRENT (AMP) 20 10 500ms 5 3 2 dc There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150_C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100ms 1ms 5ms 1 THERMAL LIMIT @ TC = 25C WIRE BOND LIMIT 0.5 0.3 0.1 0.05 1 50 3 5 7 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 2. Maximum Forward Bias Safe Operating Area TA TC 2.5 25 PD, POWER DISSIPATION (WATTS) 0.02 2 20 TC 1.5 15 TA SURFACE MOUNT 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (C) Figure 3. Power Derating www.onsemi.com 3 125 150 MJD44H11 (NPN), MJD45H11 (PNP) 1000 1000 VCE = 1 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 1 V 150C 25C 100 -55C 10 150C 25C -55C 100 10 0.01 0.1 1 10 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 4. MJD44H11 DC Current Gain Figure 5. MJD45H11 DC Current Gain 1000 1000 VCE = 4 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 4 V 150C 25C 100 -55C 10 150C 25C -55C 100 10 0.01 0.1 1 10 0.01 10 Figure 6. MJD44H11 DC Current Gain Figure 7. MJD45H11 DC Current Gain IC/IB = 20 150C 0.6 0.5 0.4 25C 0.3 0.2 -55C 0.1 0 0.01 1 IC, COLLECTOR CURRENT (A) 0.8 0.7 0.1 IC, COLLECTOR CURRENT (A) VCE(sat), COLL-EMIT SATURATION VOLTAGE (V) VCE(sat), COLL-EMIT SATURATION VOLTAGE (V) 10 IC, COLLECTOR CURRENT (A) 0.1 1 10 0.8 IC/IB = 20 0.7 -55C 0.6 0.5 0.4 25C 0.3 150C 0.2 0.1 0 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 8. MJD44H11 Saturation Voltage VCE(sat) Figure 9. MJD45H11 Saturation Voltage VCE(sat) www.onsemi.com 4 10 MJD44H11 (NPN), MJD45H11 (PNP) 1.4 VBE(sat), BASE-EMIT SATURATION VOLTAGE (V) VBE(sat), BASE-EMIT SATURATION VOLTAGE (V) 1.4 1.2 1.0 0.8 -55C 25C 0.6 0.4 150C IC/IB = 20 0.2 0.01 0.1 1 -55C 0.8 25C 0.6 150C 0.4 IC/IB = 20 0.2 0.01 10 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. MJD44H11 Saturation Voltage VBE(sat) Figure 11. MJD45H11 Saturation Voltage VBE(sat) VCE, COLLECTOR-EMITTER VOLTAGE (V) VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.0 0 0 2.0 1.8 TA = 25C 1.6 1.4 1.2 1.0 0.8 0.6 IC = 8 A 0.4 1A 0.2 IC = 0.1 A 0.5 A 0 0.1 1 10 IC = 3 A 100 1000 10,000 2.0 1.8 TA = 25C 1.6 1.4 1.2 1.0 0.8 IC = 8 A 0.6 IC = 3 A 0.4 0.2 I = 0.1 A 0.5 A C 0 0.1 1 1A 10 100 1000 10,000 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 12. MJD44H11 Collector Saturation Region Figure 13. MJD45H11 Collector Saturation Region 1000 C, CAPACITANCE (pF) 1000 C, CAPACITANCE (pF) 1.2 Cob 100 10 Cob 100 10 0.1 1 10 100 0.1 1 10 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 14. MJD44H11 Capacitance Figure 15. MJD45H11 Capacitance www.onsemi.com 5 100 MJD44H11 (NPN), MJD45H11 (PNP) 100 fTau, CURRENT-GAIN-BANDWIDTH PRODUCT fTau, CURRENT-GAIN-BANDWIDTH PRODUCT 100 VCE = 2 V 10 0.01 VCE = 2 V 10 0.1 1 0.01 10 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 16. MJD44H11 Current-Gain-Bandwidth Product Figure 17. MJD45H11 Current-Gain-Bandwidth Product www.onsemi.com 6 10 MJD44H11 (NPN), MJD45H11 (PNP) ORDERING INFORMATION Package Type Package Shipping MJD44H11G DPAK (Pb-Free) 369C 75 Units / Rail NJVMJD44H11G DPAK (Pb-Free) 369C 75 Units / Rail MJD44H11-1G DPAK-3 (Pb-Free) 369D 75 Units / Rail MJD44H11RLG DPAK (Pb-Free) 369C 1,800 / Tape & Reel NJVMJD44H11RLG* DPAK (Pb-Free) 369C 1,800 / Tape & Reel MJD44H11T4G DPAK (Pb-Free) 369C 2,500 / Tape & Reel NJVMJD44H11T4G* DPAK (Pb-Free) 369C 2,500 / Tape & Reel MJD44H11T5G DPAK (Pb-Free) 369C 2,500 / Tape & Reel MJD45H11G DPAK (Pb-Free) 369C 75 Units / Rail NJVMJD45H11G* DPAK (Pb-Free) 369C 75 Units / Rail MJD45H11-1G DPAK-3 (Pb-Free) 369D 75 Units / Rail MJD45H11RLG DPAK (Pb-Free) 369C 1,800 / Tape & Reel NJVMJD45H11RLG* DPAK (Pb-Free) 369C 1,800 / Tape & Reel MJD45H11T4G DPAK (Pb-Free) 369C 2,500 / Tape & Reel NJVMJD45H11T4G* DPAK (Pb-Free) 369C 2,500 / Tape & Reel NJVMJD44H11D3T4G* DPAK (Pb-Free) 369G 2,500 / Tape & Reel NJVMJD45H11D3T4G* DPAK (Pb-Free) 369G 2,500 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable www.onsemi.com 7 MJD44H11 (NPN), MJD45H11 (PNP) PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. A E C A b3 B c2 4 L3 Z D 1 2 H DETAIL A 3 L4 NOTE 7 c SIDE VIEW b2 e b TOP VIEW 0.005 (0.13) M C Z H L2 GAUGE PLANE C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 --- 0.040 0.155 --- 6.17 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 8 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 --- 1.01 3.93 --- MJD44H11 (NPN), MJD45H11 (PNP) PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 -T- SEATING PLANE K J F H D G DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- 3 PL 0.13 (0.005) STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR T M DPAK-3, SURFACE MOUNT CASE 369G ISSUE O -T- C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A 1 2 3 U K F J L G H D 2 PL DIM A B C D E F G H J K L R U V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.51 --- 0.89 1.27 3.93 --- STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 0.13 (0.005) T ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. 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