TOSHIBA MIG20J806H/HA TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J806H, MIG20J806HA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS e Integrates Inverter, Converter Power Circuits and Thermistor in One Package. e Output (Inverter Stage) :3 20A/600V IGBT @ Input (Converter Stage) : 34 30A/800V Silicon Rectifier e The Electrodes are Isolated from Case. e Outline MIG20J806H : 2-108E5A MIG20J806HA : 2-108E6A e Weight : 190g EQUIVALENT CIRCUIT P P1 Oo oO + + + Kit 30Rh f 5ok TOK & 1 9 Rao+ Bo 4 6 8 So U V W To KEE 120 9o! 1900+ 11l0o oO oO : 013 N N1 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-10-22 1/9TOSHIBA MIG20J806H/HA Package Dimension Unit: mm MIG20J806H 30+0.8 19.05+0, 22.86+ 11.434 6240.5 10 1 12 13 45.040.8 30.48 0.5 15.24+0.5 w o 4 2 N t 11,4340.5 1.15+0.2%1.040.2 Sf 3, rh Ah bb et? rey | HE voseos : 2-108E5A Unit: mm MIG20J806HA s0t0.8 19.05+0, 22.86+ 11.434 3.814 0.5 6240.5 45.0+0.8 30.48 40.5 15.24 40.5 +0.5 42.0405 5 11,4340.5 1.1540.2%1.0 40,2 ppb Lowa! 105+0.5 17.040.8 13.040. 2.0 16.540.8 2-108E6A 1999-10-22 2/9TOSHIBA MIG20J806H/HA MAXIMUM RATINGS (Ta = 25C) STAGE CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 Vv Gate-Emitter Voltage VGES +20 Vv Collector Current DC it 25 / 20 A | (25C/40C) Omector warren Ims Icp 50/40 A | (25C/40C) Inverter i Current DC Ip 20 A orward Curren ims Tru 40 x Collector Power Dissipation P. (Te=25C) c 90 w Repetitive Peak Reverse Voltage VRRM 800 Vv Converter Average Output Rectified Current Io 30 A Peak One Cycle Surge Forward I 400 A Current (50Hz, Non-Repetitive) FSM Junction Temperature Tj 150 C Storage Temperature Range Tstg 40~125 C Module . 2500 Isolation Voltage VIsol (AC 1 minute) Vv Screw Torque 6 N-m 1999-10-22 3/9TOSHIBA MIG20J806H/HA ELECTRICAL CHARACTERISTICS (Ta = 25C) a. Inverter stage CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Gate Leakage Current IGES VGE=120V, VcE=0 |+500] nA Collector Cut-Off Current ICES VCE=600V, VaoR=0 1.0} mA Gate-Emitter Cut-Off Voltage VGE (off) |Ic=2mA, VoR=5V 5.0 8.0] V Collector-Emitter Saturation Vv Ic =20A Tj=25C 2.1 2.7 Vy Voltage CE (sat) |vqp=15v [T)=125C | 22] 28 Input Capacitance Cieg VcE=10V, VoER=0, f=1MHz | | 1850); pF Rise Time ty Voc =3800V _ 0.10 | 0.20 Switching Turn-On Time | ton I=20A 0.25] 0.50 Ti - VaE=1t15V Ls ime Fall Time te Rg=620 0.15] 0.380 Turn-Off Time | tof (Note 1)| 0.50] 0.80 Forward Voltage VE Ip=20A, VGE=0 _ 2.0 2.8) V . Ip=20A, VaR=10V Reverse Recovery Time trr di/dt=100A/ ws 0.08} 0.15) ys . Transistor 1.39 | , Thermal Resistance Rth (-c) Diode = = 26 C/ Ww b. Converter stage CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Repetitive Peak Reverse _ Current IRRM_ | VRRM=800V 50 | A Peak Forward Voltage VFM Ipm=30A | 1.05] 1.20] V Peak One Cycle Surge Forward . Current Irom 50Hz sine-half-wave 400 A Thermal Resistance Rth (j-c) 1.56 |C/W c. Thermistor CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Zero-power Resistance Ra5 Ip7y=0.2mA, Te=25C 17.31 20 | 23.14] kO B Value Ba5/g85 | Te=25C /Te=85C | 38760]; K 1999-10-22 4/9TOSHIBA MIG20J806H/HA (Note 1) Switching Time Test Circuit & Timing Chart 1999-10-22 5/9TOSHIBA MIG20J806H/HA a. Inverter stage (A) COLLECTOR-EMITTER VOLTAGE Vcp (VY) COLLECTOR CURRENT Ic COLLECTOR-EMITTER VOLTAGE VcRp (V) Ic VCE 40 COMMON EMITTER To= 25C 30 12 20 10 10 VGE=9V 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE Veg (V) VCE - VGE COMMON EMITTER Te=25C 0 4 8 12 16 20 GATE-EMITTER VOLTAGE Vag (V) VCE - VGE COMMON EMITTER Te= 40C 0 4 8 12 16 20 GATE-EMITTER VOLTAGE Vag (V) COLLECTOR CURRENT Ic (A) COLLECTOR-EMITTER VOLTAGE Vcr (V) COLLECTOR CURRENT Ic (A) I VCE COMMON EMITTER Te= 125C 13 12 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VcoRr (V) VCE VGE COMMON EMITTER Te=125C 4 8 12 16 20 GATE-EMITTER VOLTAGE Vag (V) Ic VGE COMMON EMITTER VoR=5V Te= 125C 4 8 12 16 20 GATE-EMITTER VOLTAGE VaE (V) 1999-10-22 6/9TOSHIBA SWITCHING TIME Ic 10 MIG20J806H/HA SWITCHING TIME Rq S S & & 2 2 B a oS GS Z z o G Qo 2 E E S = n mn 01 COMMON EMITTER COMMON EMITTER Voc =300V Voc =300V VoE=115V VoEg=+15V Rq=620, I=20A .-_ : Te = 25C : Te=25C mm = : ToH125C - : TH 125C 0.01 10 100 10 100 1000 COLLECTOR-CURRENT Ic (A) GATE RESISTANCE Rq (Q) SWITCHING LOSS Ic SWITCHING LOSS Ic a wn wn 5 a GS a =x Q a = 7s) COMMON EMITTER Voc =300V VGE=+15V Ig =20A : Tc=25C - : Tc=125C SWITCHING LOSS (md) 10 100 1000 GATE RESISTANCE Rg (Q) COMMON EMITTER Voc =300V VGE=+15V Rg=620 _ : Tc = 25C - : TeH=125C 10 100 COLLECTOR-CURRENT Ic (A) 1999-10-22 7/9TOSHIBA MIG20J806H/HA C VCE VCE, VGE 9G COMMON EMITTER _ 3000 wm Ry =150, VcE=0V 2 ~ oO Te=25C os me << & & ES oS 1000 5 * oO 5 a eo a = 300 me a a = 8 > 3 aS pe a = SI <= 100 ea E o o oS ios] = ml =>) COMMON = BS 3o| EMITTER 5 < VGE=0V 6 f=1MHz 0 10 Te= 25C 0 20 40 60 80 100 1 10 100 1000 CHARGE Qg (nC) COLLECTOR-EMITTER VOLTAGE Vcr (V) Ip _ VP < 10 trr, Trp, Edsw - IF 40 Set COMMON CATHODE Eg Voc=300V 3 II 55 e = 30 a Ba 1 EX OF. & / oa he fe | pi ha mm 20 Bee 2 SOS 2 S08 5 Bee ol E o| 125C f ff 40c aie & | fas Ba / Mte=25C| COMMON CATHODE ar y] | Vap=0V gm < 0.01 0 cs a 0 i 2 3 7 5 gO 5 10 15 20 FORWARD VOLTAGE Vp (A) FORWARD CURRENT Ip (A) REVERSE BIAS SOA Rth (t) tw 10 Rth ty CC/W) 2 COLLECTOR CURRENT Ic (A) T)<125C Vop=+15V THERMAL TRANSIENT RESISTANCE Tce=25C Rg =620 0.001 0.01 0.1 1 10 0 200 400 600 800 PULSE WIDTH ty (8) COLLECTOR-EMITTER VOLTAGE Veg (V) 1999-10-22 8/9TOSHIBA MIG20J806H/HA b. Converter stage Ip VF Rth (t) tw 100 fe = gy Ss < 2B & w yQ~ Ex ae A 126C 25 on sc 2 10 fs 5 as as 01 < Zz = i m a e 4 Tce =25C COMMON CATHODE & 0.01 Vop=0V 0.001 0.01 0.1 1 10 0 05 1 15 2 PULSE WIDTH tw (s) FORWARD VOLTAGE Vp (V) 1999-10-22 9/9