VS-10MQ100NPbF
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Revision: 16-Feb-15 1Document Number: 94119
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 1 A
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-10MQ100NPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
PRODUCT SUMMARY
Package DO-214AC (SMA)
IF(AV) 1 A
VR100 V
VF at IF0.78 V
IRM 1 mA at 125 °C
TJ max. 150 °C
Diode variation Single die
EAS 1.0 mJ
Cathode Anode
DO-214AC (SMA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 1 A
VRRM 100 V
IFSM tp = 5 μs sine 120 A
VF1.5 Apk, TJ = 125 °C 0.68 V
TJRange -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10MQ100NPbF UNITS
Maximum DC reverse voltage VR100 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4 IF(AV)
50 % duty cycle at TL = 126 °C, rectangular waveform
On PC board 9 mm2 island (0.013 mm thick copper pad area) 1.5
A
50 % duty cycle at TL = 135 °C, rectangular waveform
On PC board 9 mm2 island (0.013 mm thick copper pad area) 1
Maximum peak one cycle
non-repetitive surge current, TJ = 25 °C
See fig. 6
IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
120
A
10 ms sine or 6 ms rect. pulse 30
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.5 A, L = 8 mH 1.0 mJ
Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A
VS-10MQ100NPbF
www.vishay.com Vishay Semiconductors
Revision: 16-Feb-15 2Document Number: 94119
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Note
(1) thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
1 A TJ = 25 °C 0.78
V
1.5 A 0.85
1 A TJ = 125 °C 0.63
1.5 A 0.68
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
0.1 mA
TJ = 125 °C 1
Threshold voltage VF(TO) TJ = TJ maximum 0.52 V
Forward slope resistance rt78.4 m
Typical junction capacitance CTVR = 10 VDC, TJ = 25 °C, test signal = 1 MHz 38 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ (1), TStg -55 to +150 °C
Maximum thermal resistance,
junction to ambient RthJA DC operation 80 °C/W
Approximate weight 0.07 g
0.002 oz.
Marking device Case style SMA (similar D-64) 1J
dPtot
dTJ
------------- 1
RthJA
--------------<
VS-10MQ100NPbF
www.vishay.com Vishay Semiconductors
Revision: 16-Feb-15 3Document Number: 94119
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
10
1
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward
Current (A)
0.1
0.4 0.6 0.8 1.0 1.61.2 1.4
TJ = 25 °C
TJ = 150 °C
TJ = 125 °C
0.01
0.001
VR - Reverse Voltage (V)
IR - Reverse Current (mA)
0
0.0001
100
0.1
20 40 60
1
80
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
10
10040 8020 60
TJ = 25 °C
1
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
110
150
0 0.4 0.8 1.2 2.4
90
100
120
130
1.6 2.0
140
DC
See note (1)
Square wave (D = 0.50)
80 % rated VR applied
D = 0.20
D = 0.33
D = 0.50
D = 0.75
D = 0.25
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
0
0.2
0.4
0.6
0.8
0 0.4 0.8 1.2 2.0 2.4
1.6
1.6
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
1.4
1.2
1.0
t
p
- Square Wave Pulse Duration (µs)
100
IFSM - Non-Repetitive Surge Current (A)
10 100 1000 10 000
10
At any rated load condition and
with rated VRRM applied
following surge
TJ = 25 °C
VS-10MQ100NPbF
www.vishay.com Vishay Semiconductors
Revision: 16-Feb-15 4Document Number: 94119
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-10MQ100NTRPbF 5AT 7500 13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95400
Part marking information www.vishay.com/doc?95403
Packaging information www.vishay.com/doc?95404
SPICE model www.vishay.com/doc?95371
2- Current rating (10 = 1 A)
3- M = SMA
4- Q = Schottky “Q” series
5- Voltage rating (100 = 100 V)
6- N = new SMA
7-TR = tape and reel
- PbF = lead (Pb)-free
8
1- Vishay Semiconductors product
Device code
51 32 4 6 7 8
VS- 10 M Q 100 N TR PbF
Document Number: 95400 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 09-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
SMA
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Mounting Pad Layout
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode band
0 (0)
0.030 (0.76)
0.060 (1.52)
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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