DATA SH EET
Product specification
Supersedes data of 1996 Feb 09 1996 Nov 13
DISCRETE SEMICONDUCTORS
BLV2045
UHF power transistor
1996 Nov 13 2
Philips Semiconductors Product specification
UHF power transistor BLV2045
FEATURES
•Emitter ballasting resistors for optimum temperature
profile
•Gold metallization ensures excellent reliability
•Internal input and output matching to achieve high
power gain and collector efficiency for an easy design of
wideband circuits.
APPLICATIONS
•Common emitter class-AB operation in base station
transmitters in the 1800 to 1990 MHz frequency range.
DESCRIPTION
NPN silicon planar transistor in a 2-lead SOT390A flange
package with a ceramic cap. The emitter is connected to
the flange.
PINNING - SOT390A
PIN SYMBOL DESCRIPTION
1 c collector
2 b base
3 e emitter, connected to flange
Fig.1 Simplified outline and symbol.
handbook, halfpage
1
2
3
Top view
MAM228
e
c
b
QUICK REFERENCE DATA
RF performance at Th=25°C in a common emitter test circuit.
MODE OF OPERATION f
(MHz) VCE
(V) PL
(W) Gp
(dB) ηC
(%) dim
(dBc)
CW, class-AB 1950 26 30 ≥8≥40 −
CW, class-AB 1990 26 30 ≥8≥40 −
2-tone, class-AB f1= 1950; f2= 1950.1 26 30 (PEP) typ. 9 typ. 35 typ. −30
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Nov 13 3
Philips Semiconductors Product specification
UHF power transistor BLV2045
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −60 V
VCEO collector-emitter voltage open base −28 V
VEBO emitter-base voltage open collector −2.5 V
ICcollector current (DC) −7A
I
C(AV) average collector current −7A
P
tot total power dissipation Tmb =25°C−100 W
Tstg storage temperature −65 +150 °C
Tjoperating junction temperature −200 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-mb thermal resistance from junction to
mounting base Ptot = 100 W; Tmb =25°C 1.75 K/W
Rth mb-h thermal resistance from mounting base
to heatsink 0.4 K/W
Fig.2 DC SOAR.
handbook, halfpage
10
10−1
1
MGG292
11010
2
I
C
(A)
VCE (V)
(2)
(1)
(1) Tmb =25°C.
(2) Th=70°C.
Fig.3 Power derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0 40 160
160
120
80
0
40
80 120
MGG293
Th (°C)
Ptot
(W)
(1)
(2)
1996 Nov 13 4
Philips Semiconductors Product specification
UHF power transistor BLV2045
CHARACTERISTICS
Tj=25°C unless otherwise specified.
Note
1. Capacitance of die only.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)CBO collector-base breakdown voltage open emitter; IC=40mA 60 −−V
V
(BR)CEO collector-emitter breakdown voltage open base; IC=20mA 28 −−V
V
(BR)EBO emitter-base breakdown voltage open collector; IE=1mA 2.5 −−V
I
CES collector leakage current VCE = 12.5 V; VBE =0 −−8mA
h
FE DC current gain VCE = 24 V; IC= 2 A 45 60 −
Cccollector capacitance VCB = 26 V; IE=i
e= 0; f = 1 MHz;
note 1 −32 −pF
Cre feedback capacitance VCE = 26 V; IC= 0; f = 1 MHz −20 −pF
Fig.4 DC current gain as a function of collector
current; typical values.
(1) VCE = 26 V; tp= 500 µs; δ=<1%.
(2) VCE =10V.
0
120
80
40
0210468
MGG294
IC (A)
hFE
(1)
(2)
Fig.5 Feedback capacitance as a function of
collector-emitter voltage; typical values.
f = 1 MHz.
handbook, halfpage
01020 4030
MGG295
60
0
20
40
VCE (V)
Cre
(pF)
1996 Nov 13 5
Philips Semiconductors Product specification
UHF power transistor BLV2045
APPLICATION INFORMATION
RF performance at Th=25°C in a common emitter test circuit.
Note
1. See application note BLV2045.
Ruggedness in class-AB operation
The BLV2045 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the
following conditions: f = 1950 MHz; VCE = 26 V; ICQ = 80 mA; PL=30W;T
mb =25°C.
MODE OF OPERATION f
(MHz) VCE
(V) ICQ
(mA) PL
(W) Gp
(dB) ηC
(%) dim
(dBc)
CW, class-AB 1950 26 80 30 ≥8≥40 −
typ. 8.5 typ. 45
CW, class-AB (note 1) 1990 26 80 30 ≥8≥40 −
2-tone, class-AB f1= 1950; f2= 1950.1 26 80 30 (PEP) typ. 9 typ. 35 typ. −30
Fig.6 Power gain and collector efficiency as
functions of load power; typical values.
VCE = 26 V; ICQ = 80 mA; f = 1950 MHz.
handbook, halfpage
0
12
8
4
010 20 40
MGD249
30
Gp
(dB)
PL (W)
ηC
(%)
ηC
20
40
0
60
Gp
Fig.7 Load power as a function of drive power;
typical values.
VCE = 26 V; ICQ = 80 mA; f = 1950 MHz.
handbook, halfpage
0246
40
30
10
0
20
MGD250
PL
(W)
PD (W)
1996 Nov 13 6
Philips Semiconductors Product specification
UHF power transistor BLV2045
Fig.8 Power gain as a function of drive power;
typical values.
VCE = 26 V; f = 1950 MHz.
(1) ICQ = 240 mA. (2) ICQ = 160 mA. (3) ICQ =80mA.
handbook, halfpage
0
4
8
12
MGG296
10−310−210−1110
P
D (W)
GP
(dB) (1)
(2)
(3)
Fig.9 Intermodulation distortion as a function of
peak envelope load power; typical values.
handbook, halfpage
0
0
−20
−40
−60
d7
40
MGD252
10 3020 PL (PEP) (W)
dim
(dBc)
d3
d5
VCE = 26 V; ICQ = 80 mA; f1= 1950 MHz; f2= 1950.1 MHz.
Fig.10 Third order Intermodulation distortion as a
function of peak envelope load power;
typical values.
VCE = 26 V; f1= 1950 MHz; f2= 1950.1 MHz.
(1) ICQ =40mA. (2) ICQ =80mA. (3) ICQ = 120 mA.
handbook, halfpage
0
0
−20
−40
−60
(1)
(3)
40
MGD251
10 20 30
PL (PEP) (W)
d3
(dBc)
(2)
1996 Nov 13 7
Philips Semiconductors Product specification
UHF power transistor BLV2045
Test circuit information
Fig.11 Class-AB test circuit for 1.8 to 2 GHz.
handbook, full pagewidth
50 Ω
output
DUT
50 Ω
input
+Vbias +VCC
L2
L1 L3 L4
L5 L9
L10
L7 L8
L12
R2
C4
R1 C3
L6
C8
C1
C2 C5 C7C6
MGG299
L11
List of components
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C8 multilayer ceramic chip capacitor;
note 1 30 pF
C2, C7 tantalum SMD capacitor 10 µF; 35 V
C3, C4 multilayer ceramic chip capacitor;
note 2 20 pF
C5 multilayer ceramic chip capacitor 22 nF 2222 629 08223
C6 multilayer ceramic chip capacitor 100 nF 2222 852 47104
L1 stripline; note 3 20.5 Ωlength 2.5 mm
width 3.5 mm
L2 stripline; note 3 29.8 Ωlength 5.6 mm
width 2.1 mm
L3 stripline; note 3 11 Ωlength 2 mm
width 7.4 mm
L4 stripline; note 3 13.2 Ωlength 7.2 mm
width 6 mm
L5 5 turns enamelled 1 mm copper wire 38 nH length 8 mm
int. dia. 3 mm
L6, L12 grade 4S2 ferroxcube chip-bead 4330 030 36301
L7 stripline; note 3 11.5 Ωlength 6.6 mm
width 7.1 mm
L8 stripline; note 3 6.9 Ωlength 6.4 mm
width 12.6 mm
L9 2 turns enamelled 1 mm copper wire 9 nH length 4 mm
int. dia. 3 mm
1996 Nov 13 8
Philips Semiconductors Product specification
UHF power transistor BLV2045
Notes
1. American Technical Ceramics type 100A or capacitor of the same quality.
2. American Technical Ceramics type 100B or capacitor of the same quality.
3. The striplines are on a double copper-clad printed-circuit board with epoxy fibre-glass dielectric (εr= 6.15);
thickness 0.64 mm.
L10 stripline; note 3 35.8 Ωlength 9.9 mm
width 1.6 mm
L11 stripline; note 3 14.4 Ωlength 2.7 mm
width 5.4 mm
R1, R2 metal film resistor 10 Ω; 0.4 W 2311 153 51009
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
1996 Nov 13 9
Philips Semiconductors Product specification
UHF power transistor BLV2045
Fig.12 Component layout and printed-circuit board for 1.8 to 2 GHz class-AB test circuit.
Dimensions in mm.
The components are situated on one side of the copper-clad epoxy fibre-glass board, the other side is not etched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
handbook, full pagewidth
MGG300
50 Ω
input 50 Ω
output
40
L1
C1
C2
C3 C4
C7
C6
C5
L6
R1
L12
R2
C8
+VCC
+Vbias
L2 L3 L4
L5
L7 L8
L9
L10 L11
30
30
1996 Nov 13 10
Philips Semiconductors Product specification
UHF power transistor BLV2045
Fig.13 Input impedance as a function of frequency
(series components); typical values.
handbook, halfpage
1700 1800 1900 2000
MGG297
8
2
0
6
4
ri
xi
f (MHz)
Zi
(Ω)
VCE = 26 V; ICQ = 80 mA; PL= 30 W; Tmb =25°C.
Fig.14 Load impedance as a function of frequency
(series components); typical values.
VCE = 26 V; ICQ = 80 mA; PL= 30 W; Tmb =25°C.
handbook, halfpage
1700 1800 1900 2000
MGG298
8
0
−4
4
RL
XL
f (MHz)
ZL
(Ω)
Fig.15 Power gain as a function of frequency;
typical values.
VCE = 26 V; ICQ = 80 mA; PL= 30 W; Tmb =25°C.
handbook, halfpage
12
8
4
0
MGD255
18001700 1900 2000
f (MHz)
Gp
(dB)
Fig.16 Definition of transistor impedance.
handbook, halfpage
MBA451
ZiZL
1996 Nov 13 11
Philips Semiconductors Product specification
UHF power transistor BLV2045
PACKAGE OUTLINE
Fig.17 SOT390A.
Dimensions in mm.
Recommended screw: M3.
Torque on screws: max. 0.5 Nm.
handbook, full pagewidth
MSA469
1
2
3
5.72
5.46
14.22
6.43
6.17
6.10
5.33
6.10
5.33
3.43
3.17
0.16
0.10
1.68
1.37
2.32
2.00 5.0
max
8.3
8.0
19.03
18.77
1996 Nov 13 12
Philips Semiconductors Product specification
UHF power transistor BLV2045
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1996 Nov 13 13
Philips Semiconductors Product specification
UHF power transistor BLV2045
NOTES
1996 Nov 13 14
Philips Semiconductors Product specification
UHF power transistor BLV2045
NOTES
1996 Nov 13 15
Philips Semiconductors Product specification
UHF power transistor BLV2045
NOTES
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Philips Semiconductors – a worldwide company
© Philips Electronics N.V. 1996 SCA52
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Printed in The Netherlands 127061/1200/02/pp16 Date of release: 1996 Nov 13 Document order number: 9397 750 01117
