2SD1899 - Transys Electronics

TO-252 Plastic-Encapsulated Transistors

2SD1899-Z TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM: 2 W (Tamb=25℃)

Collector current

ICM: 3 A

Collector-base voltage

V(BR)CBO: 60 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specifie)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 60 V

Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 60 V

E mitter-b ase breakdown voltage V(BR)EBO IE=100µA,IC=0 7 V

Collector cut-off current ICBO VCB=60V, IE=0

10 µA

E mitte r cut-off current IEBO VEB=7V, IC=0

10 µA

hFE(1) VCE=2V, IC=200mA 60

hFE(2) VCE=2V, IC=600mA 100 400 DC current gain

hFE(3) VCE=2V, IC=2A 50

Collector-emitter saturation voltage VCE(sat) IC=1.5A, IB=150mA

0.25 V

Base-emitter satu ration voltage VBE(sat) IC=1.5A, IB=150mA

1.2 V

Transition fre quency fT V

CE=5V, IC=1.5A 120 MHz

Collector out put capacitance Cob VCB=10V, IE=0, f =1MHz 30 pF

Turn on Time ton

0.5

Stora ge Time tstg

2.0 Switching Time

Fall Time tf

VCC=30V, IC=1A, IB1=-IB2=-0.05A

0.5

µs

CLASSIFICATION OF hFE(1)

Rank M L K

Range 100-200 160-320 200-400

TO-252

1. BASE

2. COLLECTOR

3. E MITTER

1 2 3

Transys

Electronics

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