© 2011 IXYS CORPORATION, All Rights Reserved DS100256A(9/11)
IXFH52N50P2
IXFT52N50P2
Polar2TM HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ500 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C 52 A
IDM TC= 25°C, Pulse Width Limited by TJM 150 A
IATC= 25°C52 A
EAS TC= 25°C 1.5 J
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns
PDTC= 25°C 960 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062in.) from Case for 10s 300 °C
Tsold Plastic Body for 10 seconds 260 °C
MdMounting Torque (TO-247) 1.13 / 10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
VDSS = 500V
ID25 = 52A
RDS(on) ≤≤
≤≤
≤ 120mΩΩ
ΩΩ
Ω
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 500 V
VGS(th) VDS = VGS, ID = 4mA 2.5 4.5 V
IGSS VGS = ±30V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V 15 μA
TJ = 125°C 1.5 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 120 mΩ
G = Gate D = Drain
S = Source Tab = Drain
TO-268 (IXFT)
S
G
D (Tab)
TO-247 (IXFH)
G
SD (Tab)
D
Features
zInternational Standard Packages
zFast Intrinsic Diode
zAvalanche Rated
zLow RDS(ON) and QG
zLow Package Inductance
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC-DC Converters
zLaser Drivers
zAC and DC Motor Drives
zRobotics and Servo Controls
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH52N50P2
IXFT52N50P2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
e
∅ P
TO-247 Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 Outline
Terminals: 1 - Gate 2 - Drain
3 - Source 4 - Drain
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 30 48 S
Ciss 6800 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 695 pF
Crss 76 pF
td(on) 22 ns
tr 10 ns
td(off) 46 ns
tf 8 ns
Qg(on) 113 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 30 nC
Qgd 43 nC
RthJC 0.13 °C/W
RthCS 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 52 A
ISM Repetitive, Pulse Width Limited by TJM 208 A
VSD IF = IS, VGS = 0V, Note 1 1.3 V
trr 250 ns
IRM 14 A
QRM 1.27 μC
IF = 26A, -di/dt = 100A/μs
VR = 85V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
© 2011 IXYS CORPORATION, All Rights Reserved
IXFH52N50P2
IXFT52N50P2
Fi g . 1. Ou tp ut C h ar act er i sti cs @ T
J
= 25ºC
0
5
10
15
20
25
30
35
40
45
50
55
0123456
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6
V
5
V
Fi g . 2. Exten ded Ou tput C h ar ac ter i sti cs @ T
J
= 25ºC
0
20
40
60
80
100
120
0 5 10 15 20 25 30
V
DS
- V o lt s
I
D
- A mperes
V
GS
= 10V
8V
5
V
6
V
7
V
Fi g . 3. Ou tpu t C h ar ac ter i stics @ T
J
= 125º C
0
5
10
15
20
25
30
35
40
45
50
55
0246810121416
V
DS
- Volts
I
D
- Amper es
4
V
5V
6V
V
GS
= 10V
7V
Fig. 4. R
DS(on)
No r mal i z ed to I
D
= 26A Valu e vs.
Junction T emperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normali zed
V
GS
= 10V
I
D
= 52A
I
D
= 26A
Fig. 5. R
DS(on)
Normalized to I
D
= 26A Valu e vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
0 10 20 30 40 50 60 70 80 90 100 110 120
I
D
- Amp e res
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fi g. 6. Maximum D r ai n C u r r en t v s.
Case Tempera tu r e
0
5
10
15
20
25
30
35
40
45
50
55
-50-250 255075100125150
T
C
- Degrees Centigrade
I
D
- Ampere s
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH52N50P2
IXFT52N50P2
IXYS REF: F_52N50P2(8J-N45)03-22-10
Fi g . 13. Maximum Tr an si en t Thermal Imp ed an ce
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 12. Maximum Transient Thermal Impedance
0.30
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
90
3.03.54.04.55.05.56.06.57.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Tr ansconductance
0
10
20
30
40
50
60
70
80
90
100
0 102030405060708090
I
D
- Amp eres
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
20
40
60
80
100
120
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100110120
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 250V
I
D
= 26A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
