DCR1673SA - Dynex Semiconductor

DCR1673SA

1/8

www.dynexsemi.com

FDS5646-2.0 February 2004

FEATURES

■Double Side Cooling

■High Surge Capability

■High Mean Current

■Fatigue Free

APPLICATIONS

■High Power Drives

■High Voltage Power Supplies

■DC Motor Control

VOLTAGE RATINGS

ORDERING INFORMATION

When ordering, select the required part number shown in the

Voltage Ratings selection table.

For example:

DCR1673SA27

Note: Please use the complete part number when ordering and

quote this number in any future correspondance relating to your

order.

KEY PARAMETERS

VDRM 2800V

IT(AV) 5088A

ITSM 83000A

dVdt* 1000V/µs

dI/dt 250A/µs

*Higher dV/dt selections available

Fig. 1 Package outline

Outline type code: A.

See Package Details for further information.

DCR1673SA

Phase Control Thyristor

DCR1673SA28

DCR1673SA27

DCR1673SA26

DCR1673SA25

DCR1673SA24

Conditions

Tvj = 0˚ to 125˚C,

IDRM = IRRM = 500mA,

VDRM, VRRM tp = 10ms,

VDSM & VRSM =

VDRM & VRRM + 100V

Respectively

Lower voltage grades available.

Type Number Repetitive Peak

Voltages

VDRM VRRM

2800

2700

2600

2500

2400

DCR1673SA

2/8

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CURRENT RATINGS

Tcase = 80˚C unless stated otherwise

Symbol Parameter Conditions

Double Side Cooled

IT(AV) Mean on-state current

IT(RMS) RMS value

ITContinuous (direct) on-state current

Single Side Cooled (Anode side)

IT(AV) Mean on-state current

IT(RMS) RMS value

ITContinuous (direct) on-state current

UnitsMax.

Half wave resistive load 3990 A

- 6320 A

- 5570 A

Half wave resistive load 2540 A

- 3980 A

- 3250 A

CURRENT RATINGS

Tcase = 60˚C unless stated otherwise

Symbol Parameter Conditions

Double Side Cooled

IT(AV) Mean on-state current

IT(RMS) RMS value

ITContinuous (direct) on-state current

Single Side Cooled (Anode side)

IT(AV) Mean on-state current

IT(RMS) RMS value

ITContinuous (direct) on-state current

UnitsMax.

Half wave resistive load 5088 A

- 7995 A

- 7280 A

Half wave resistive load 3300 A

- 5180 A

- 4350 A

DCR1673SA

3/8

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SURGE RATINGS

Conditions

10ms half sine; Tcase = 125oC

VR = 50% VRRM - 1/4 sine

10ms half sine; Tcase = 125oC

VR = 0

Max. Units

Symbol Parameter

ITSM Surge (non-repetitive) on-state current

I2tI

2t for fusing

ITSM Surge (non-repetitive) on-state current

I2tI2t for fusing 34.4 x 106A2s

83.0 kA

22.0 x 106A2s

66.4 kA

THERMAL AND MECHANICAL DATA

Conditions Min. Max. Units

oC/W- 0.013Anode dc

Clamping force 83.0kN

with mounting compound

Thermal resistance - case to heatsink

Rth(c-h)

0.001

Double side -

125 oC

Tvj Virtual junction temperature

Tstg Storage temperature range

Reverse (blocking)

Single side

Thermal resistance - junction to case

Rth(j-c) Single side cooled

Symbol Parameter

Clamping force 74.0 91.0 kN

–55 125 oC

On-state (conducting) - 135 oC

- 0.002 oC/W

oC/W

Cathode dc - 0.013 oC/W

Double side cooled - 0.0065 oC/W

DCR1673SA

4/8

www.dynexsemi.com

GATE TRIGGER CHARACTERISTICS AND RATINGS

VDRM = 5V, Tcase = 25oC

ConditionsParameterSymbol

VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC

IGT Gate trigger current

VGD Gate non-trigger voltage At VDRM Tcase = 125oC

VFGM Peak forward gate voltage Anode positive with respect to cathode

VFGN Peak forward gate voltage Anode negative with respect to cathode

VRGM Peak reverse gate voltage

IFGM Peak forward gate current Anode positive with respect to cathode

PGM Peak gate power See table, gate characteristics curve

PG(AV) Mean gate power

3.5 V

500 mA

0.25 V

30 V

0.25 V

30 A

150 W

10 W

Max. Units

DYNAMIC CHARACTERISTICS

ParameterSymbol Conditions Typ. Max. Units

IRRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC

From 67% VDRM to 1100A

Gate source 1A

tr = 0.5µs, Tj = 125oC

dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC

- 500 mA

- 1000 V/µs

Repetitive 50Hz - 250 A/µs

Non-repetitive - 500 A/µs

Rate of rise of on-state current

dI/dt

VT(TO) Threshold voltage At Tvj = 125oC

rTOn-state slope resistance At Tvj = 125oC

tgd Delay time

0.82-V

- 0.076 mΩ

1.0 1.5 µs

VD = 67% VDRM, Gate source 20V, 10Ω

tr = 0.5µs, Tj = 25oC

ILLatching current Tj = 25oC, VD = 5V

IHHolding current Tj = 25oC, Rg-k = ∞

150 750 mA

40 200 mA

DCR1673SA

5/8

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CURVES

Fig.2 Maximum (limit) on-state characteristics Fig.3 Dissipation curves

VTM Equation:-

VTM = A + Bln (IT) + C.IT+D.√IT

Where A = 0.6180535

B = 0.007965

C = 4.57 x 10–5

D = 4.003 x 10–3

these values are valid for Tj = 125˚C for IT 200A to 10000A

1000

2000

3000

4000

5000

6000

7000

8000

9000

10000

0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6

Instantaneous on-state voltage, VT - (V)

Instantaneous on-state current, IT - (A)

Measured under pulse conditions

Tj = 125˚C

1000

2000

3000

4000

5000

6000

7000

8000

9000

10000

0 1000 2000 3000 4000 5000 6000 7000

Mean on-state current, IT - (A)

Mean power dissipation - (W)

1/2 wave

3 phase

6 phase

12 phase

DCR1673SA

6/8

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Fig.6 Transient thermal impedance - junction to case

Fig.4 Recovered charge Fig.5 Gate characteristics

Fig.7 Surge (non-repetitive) on-state current vs time (with

50% VRRM at Tcase = 125˚C)

100000

10000

1000

Recovered charge Qr - (µC)

1 10 100

Rate of decay of on-state current, dI/dt - (A/µs)

= 3000A

= 125˚C

100

0.1

0.001 0.10.01 1.0 10

VFGM

Lower Limit 1%

Upper Limit 99%

Tj = 25˚C

VGD

Gate trigger voltage, VGT - (V)

Gate trigger current, IGT - (A)

100W

50W

20W

10W

IGD IFGM

Table gives pulse power PGM in Watts

Pulse Width

µs

100

200

500

1ms

10ms

150

100

150

100

400

150

125

100

Frequency Hz

1010.10.010.001

Time - (s)

0.1

0.01

0.001

0.0001

Thermal impedance - (˚C/W)

Double side cooled

Anode side cooled

100

Conduction

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

Effective thermal resistance

Junction to case ˚C/W

Double side

0.0065

0.0072

0.0073

0.0076

Anode side

0.0130

0.0137

0.0138

0.0141

110510150

Cycles at 50Hzms

Duration

100

150

Peak half sinewave on-state current - (kA)

200

t value for fusing - (A

s x 10

)

DCR1673SA

7/8

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PACKAGE DETAILS

For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.

DO NOT SCALE.

Ø100 nom

Cathode

Gate

Anode

35.0 ± 0.5

Ø100 nom

Ø148 nom

Ø138.5

Nominal weight: 2575g

Clamping force: 83kN ±10%

Lead length: 420mm

Lead terminal connector: M4 ring

Package outline type code: A

Ø1.5

2 holes Ø3.6 x 2.0 deep (In both electrodes)

Cathode tab

Fig.8 Package outline

www.dynexsemi.com

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic

semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages

and current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.

The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of

our customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete

Solution (PACs).

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to

optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow

rates) is available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or

Customer Services.

CUSTOMER SERVICE

Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020

UNITED KINGDOM

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.

Lincolnshire. LN6 3LF. United Kingdom.

Tel: +44-(0)1522-500500

Fax: +44-(0)1522-500550

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded

as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company

reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee

that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure

that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

http://www.dynexsemi.com

e-mail: power_solutions@dynexsemi.com

Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all

semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always

be followed.