BC618,112 - NXP Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 2003 Oct 16 2004 Nov 05

DISCRETE SEMICONDUCTORS

BC618

NPN Darlington transistor

ook, halfpage

M3D186

2004 Nov 05 2

NXP Semiconductors Product data sheet

NPN Darlington transistor BC618

FEATURES

•Low current (ma x. 500 mA)

•Low voltage (max. 55 V)

•High DC current gain.

APPLICATIONS

•General purpos e low frequency

•Relay drivers.

DESCRIPTION

NPN Darlington transist or in a TO-92; SOT54 plastic

package.

PINNING

PIN DESCRIPTION

1emitter

2base

3collector

Fig.1 Simplified outline (TO-92; SOT54) and

symbol.

handbook, halfpage

MAM302

TR2

TR1

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

BC618 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54

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NXP Semiconductors Pr oduct data shee t

NPN Darlington transistor BC618

LIMITING VALUES

In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTE RISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter −80 V

VCES collector-emitter voltage VBE = 0 V −55 V

VEBO emitter-base voltage open collector −12 V

ICcollector current (DC) −500 mA

ICM peak collector current −800 mA

IBbase current (DC) −200 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −625 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 200 K/W

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NPN Darlington transistor BC618

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-of f cu rrent VCB = 60 V; IE = 0 A − − 50 nA

ICES collector-emitter cut-off current VBE = 0 V; VCE = 60 V − − 50 μA

IEBO emitter-base cu t-off current VEB = 10 V; IC = 0 A − − 50 nA

hFE DC current gain VCE = 5 V; see Fig.2

IC = 1 mA 2 000 − −

IC = 10 mA 4 000 − −

IC = 200 mA 10 000 −70 000

VCEsat collector-emitte r sa turation v oltage IC = 200 mA; IB = 0.2 mA − − 1.1 V

VBEsat base-emitt er saturation voltage IC = 200 mA; IB = 0.2 mA − − 1.6 V

Cccollector capacitance VCB = 30 V; IE = 0 A −3.5 −pF

fTtransition frequen c y VCE = 5 V; IC = 500 mA; f = 100 MHz 155 − − MHz

handbook, full pagewidth

60000

80000

20000

40000

MGD837

10−11IC (mA)

hFE

10 102 103

Fig.2 DC current gain; typical values.

VCE = 2 V.

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NXP Semiconductors Pr oduct data shee t

NPN Darlington transistor BC618

PACKAGE OUTLINE

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 5.2

5.0

0.48

0.40

0.45

0.38

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

L1(1)

max.

2.5

0.66

0.55

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 TO-92 SC-43A 04-06-28

04-11-16

A L

0 2.5 5 mm

scale

b1L1

Plastic single-ended leaded (through hole) package; 3 leads SOT5

e1e

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NXP Semiconductors Pr oduct data shee t

NPN Darlington transistor BC618

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s ) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

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not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict betw een information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, c onveyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property righ ts.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information pr e sent ed in this document d oes not form part of an y q uot ation or co ntract, is believed to be a ccur ate a nd re li a ble and may be chan ged

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/05/pp7 Date of release: 2004 Nov 05 Document orde r number: 9397 750 13573