AOT20N60/AOTF20N60
600V,20A N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 20A
R
DS(ON)
(at V
GS
=10V) < 0.37Ω
100% UIS Tested
100% R
g
Tested
For Halogen Free add "L" suffix to part number:
AOT20N60L&AOTF20N60L
Symbol
The AOT20N60 & AOTF20N60 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low R
DS(on)
, C
iss
and C
rss
along with guaranteed avalanche
capability these parts can be adopted quickly into new
and existing offline power supply designs.
Units
Parameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
700V@150℃
AOT20N60
AOTF20N60
G
D
S
AOT20N60
Top View
TO-220F
TO-220
GD
G
D
AOTF20N60
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
E
AS
Peak diode recovery dv/dt dv/dt
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θCS
R
θJC
* Drain current limited by maximum junction temperature.
Maximum Junction-to-Case
Avalanche Current
C
630
Single plused avalanche energy
G
1260
Parameter
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Junction and Storage Temperature Range
Derate above 25
o
C
Repetitive avalanche energy
C
T
C
=25°C
Thermal Characteristics
5
Power Dissipation
B
V
Units
Parameter
Drain-Source Voltage 600
AOT20N60
AOTF20N60
V±30Gate-Source Voltage
V/ns
mJ
T
C
=100°C A
80Pulsed Drain Current
C
Maximum Junction-to-Ambient
A,D
°C
20 20*
12*12
6565
P
D
300
-55 to 150
Continuous Drain
Current
T
C
=25°C I
D
Maximum Case-to-sink
A
6.5
°C/W
Units
A
°C
mJ
W
W/
o
C
AOT20N60 AOTF20N60
417 50
0.43.3
°C/W
°C/W0.5 --
2.50.3
Rev2: Dec 2011
www.aosmd.com Page 1 of 6
AOT20N60/AOTF20N60
Symbol Min Typ Max Units
600
700
BV
DSS
/
∆TJ
0.8 V/
o
C
1
10
I
GSS
Gate-Body leakage current ±100 nΑ
V
GS(th)
Gate Threshold Voltage 3.2 3.8 4.5 V
R
DS(ON)
0.29 0.37 Ω
g
FS
25 S
V
SD
0.69 1 V
I
S
Maximum Body-Diode Continuous Current 20 A
I
SM
80 A
C
iss
2448 3061 3680 pF
C
oss
190 273 360 pF
C
rss
13 22.8 35 pF
R
g
0.7 1.4 2.1 Ω
Q
g
48 61 74 nC
Q
gs
14 18 22 nC
Q
gd
12 24 36 nC
t
D(on)
57 ns
t
r
125 ns
t
D(off)
128 ns
Static Drain-Source On-Resistance V
GS
=10V, I
D
=10A
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
SWITCHING PARAMETERS
I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=10A
Forward Transconductance
Turn-On Rise Time
Gate Source Charge
Gate Drain Charge
Diode Forward Voltage
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
Zero Gate Voltage Drain Current V
DS
=600V, V
GS
=0V µA
BV
DSS
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
Turn-Off DelayTime
V
GS
=10V, V
DS
=300V, I
D
=20A,
R
G
=25Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=480V, I
D
=20A
DYNAMIC PARAMETERS
V
DS
=5V,
I
D
=250µA
V
DS
=480V, T
J
=125°C
V
DS
=0V, V
GS
=±30V
V
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
Breakdown Voltage Temperature
Coefficient I
D
=250µA, V
GS
=0V
D(off)
t
f
88 ns
t
rr
384 480 580 ns
Q
rr
8 10.5 13 µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=20A,dI/dt=100A/µs,V
DS
=100V
Body Diode Reverse Recovery Charge I
F
=20A,dI/dt=100A/µs,V
DS
=100V
Turn-Off Fall Time
Body Diode Reverse Recovery Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=6.5A, VDD=150V, RG=25Ω, Starting TJ=25°C
Rev2: Dec 2011 www.aosmd.com Page 2 of 6
AOT20N60/AOTF20N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
0 5 10 15 20 25 30
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=5.5V
6V
10V
6.5V
0.1
1
10
100
0 2 4 6 8 10
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
-
55
°
C
V
DS
=40V
25°C
125
°
C
0.1
0.2
0.3
0.4
0.5
0.6
0 10 20 30 40 50
RDS(ON) (Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
V
GS
=10V
0
0.5
1
1.5
2
2.5
3
-100 -50 0 50 100 150 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=10V
ID=10A
40
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
Voltage
0.8
0.9
1
1.1
1.2
-100 -50 0 50 100 150 200
BVDSS (Normalized)
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
Rev2: Dec 2011 www.aosmd.com Page 3 of 6
AOT20N60/AOTF20N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 20 40 60 80 100
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
VDS=480V
ID=20A
10
100
1000
10000
0.1 1 10 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
Crss
0.01
0.1
1
10
100
1 10 100 1000
ID(Amps)
V
DS
(Volts)
10µs
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100µs
1s
0.01
0.1
1
10
100
1 10 100 1000
ID(Amps)
V
DS
(Volts)
10µs
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100µs
V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF20N60 (Note F)
0
5
10
15
20
25
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 11: Current De-rating (Note B)
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT20N60 (Note F)
Rev2: Dec 2011 www.aosmd.com Page 4 of 6
AOT20N60/AOTF20N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
0.001
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT20N60 (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF20N60 (Note F)
Rev2: Dec 2011 www.aosmd.com Page 5 of 6
AOT20N60/AOTF20N60
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vgs
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Tes t Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev2: Dec 2011 www.aosmd.com Page 6 of 6