1
MRF15090MOTOROLA RF DEVICE DATA
The RF Line
Designed for 26 volts microwave large–signal, common emitter, class A and
class AB linear amplifier applications in industrial and commercial FM/AM
equipment operating in the range 1400–1600 MHz.
•Specified 26 Volts, 1490 MHz, Class AB Characteristics
Output Power — 90 Watts (PEP)
Gain — 7.5 dB Min @ 90 Watts (PEP)
Collector Efficiency — 30% Min @ 90 Watts (PEP)
Intermodulation Distortion — –28 dBc Max @ 90 Watts (PEP)
•Third Order Intercept Point — 56.5 dBm Typ @ 1490 MHz, VCE = 24 Vdc,
IC = 5 Adc
•Characterized with Series Equivalent Large–Signal Parameters from
1400–1600 MHz
•Characterized with Small–Signal S–Parameters from 1000–2000 MHz
•Silicon Nitride Passivated
•100% Tested for Load Mismatch Stress at All Phase Angles with 3:1 Load
VSWR @ 28 Vdc, and Rated Output Power
•Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
•Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 25 Vdc
Collector–Emitter V oltage VCES 60 Vdc
Emitter–Base Voltage VEBO 4Vdc
Collector–Current — Continuous @ TJ(max) = 150°C IC15 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD250
1.43 Watts
W/°C
Storage Temperature Range Tstg – 65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 0.70 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0) V(BR)CEO 25 28 — Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0) V(BR)CES 60 65 — Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, RBE = 100 Ω)V(BR)CER 30 — — Vdc
(continued)
Order this document
by MRF15090/D
SEMICONDUCTOR TECHNICAL DATA
90 W, 1.5 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 375A–01, STYLE 1
Motorola, Inc. 1998
REV 7
MRF15090
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS — continued
Emitter–Base Breakdown Voltage
(IE = 5 mAdc, IC = 0) V(BR)EBO 4 4.8 — Vdc
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0) ICES — — 10 mAdc
ON CHARACTERISTICS
DC Current Gain
(ICE = 1 Adc, VCE = 5 Vdc) hFE 20 40 80 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1 MHz) –
For Information Only. This Part Is Collector Matched.
Cob —52 — pF
FUNCTIONAL TESTS (Figure 12)
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
Gpe 7.5 8.3 — dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
η30 36 — %
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
IMD — –32 –28 dBc
Input Return Loss
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
IRL 12 15 — dB
Load Mismatch
(VCC = 28 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz, Load VSWR = 3:1, All Phase
Angles at Frequency of Test)
ψ
No Degradation in Output Power
3
MRF15090MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
Gpe, POWER GAIN (dB) Gpe, POWER GAIN (dB)
Pout
Gpe
VCC = 26 Vdc
ICQ = 250 mA
Single Tone
5 W
10 W
Pin = 15 W
20
Figure 1. Output Power & Power Gain
versus Input Power
120
Pin, INPUT POWER (WATTS)
20
08
40
80
60
Figure 2. Output Power versus Frequency
100
01440 f, FREQUENCY (MHz)
1480
80
40
20
152041216 1560
60
P
out, OUTPUT POWER (WATTS)
1400 16000
P
out, OUTPUT POWER (WATTS)
100
9.0
8.5
8.0
7.5
Gpe, GAIN (dB)
1460 1500 1540 15801420
VCC = 26 Vdc
ICQ = 250 mA
f1 = 1490 MHz
f2 = 1490.1 MHz
7th
η
Gpe
VSWR
VCC = 26 Vdc
f1 = 1490 MHz
f2 = 1490.1 MHz
ICQ = 100 mA
750 mA
500 mA
250 mA
VCC = 26 Vdc
f1 = 1490 MHz
f2 = 1490.1 MHz
100 mA
250 mA
500 mA
ICQ = 750 mA
120
Figure 3. Intermodulation Distortion
versus Output Power
–20
P
out, OUTPUT POWER (W ATTS) PEP
–50
–60 40
–40
–30
Figure 4. Performance in Broadband Circuit
10
01440 f, FREQUENCY (MHz)
1480
8
4
2
152020 60 80 1540
6
IMD, INTERMODULA TION DISTOR TION (dBc)
Figure 5. Intermodulation Distortion
versus Output Power
–20
0.1 Pout, OUTPUT POWER (W ATTS) PEP
–50
–60 10
–40
–30
Figure 6. Power Gain versus Output Power
2
Pout, OUTPUT POWER (W ATTS) PEP
6
1
10
10
1 100 100
1400 1560
0.1
0
3
4
5
7
8
9
100
9
7
3
1
5
1460 15001420
–25
–55
–45
–35
IMD, INTERMODULA TION DISTOR TION (dBc)
5th
3rd Order
50
20
0
40
30
10
1.0
2.0
2.5
3.0
INPUT VSWR
η
, COLLECTOR
EFFICIENCY (%)
VCC = 26 Vdc
ICQ = 250 mA
f = 1490 MHz Single Tone
Pout = 90 W (PEP)
VCC = 26 Vdc
ICQ = 250 mA
1.5
MRF15090
4MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
3rd Order
Fundamental
VCC = 24 Vdc
IC = 5.0 Adc
f1 = 1490 MHz
f2 = 1490.1 MHz
60
–40 15 Pin, INPUT POWER (dBm)
20
50
30
10
25 30
40
10 35
Pout, OUTPUT POWER (dBm)
20
0
–20
–30
–10
40 45 50
ICQ = 250 mA
f1 = 1490 MHz
f2 = 1490.1 MHz
IMD
Gpe
Gpe, POWER GAIN (dB)
9
VCC, COLLECTOR SUPPLY VOL TAGE (Vdc)
6.5
622
7
8
20 24 2618 28
8.5
7.5
–10
–15
–20
–25
–30
–35
–40
IMD, INTERMODULA TION DISTOR TION (dBc)
106
107
105
109
108
Figure 7. Class A Third Order Intercept Point Figure 8. Power Gain and Intermodulation
Distortion versus Supply Voltage
2
MTBF FACTOR (HOURS x AMPS )
TJ = 175
°
C
Tflange = 75
°
C
Tflange = 100
°
C
28
Figure 9. DC Safe Operating Area
10
VCE, COLLECTOR VOLTAGE (Vdc)
2
08
4
8
6
Figure 10. MTBF Factor versus
Junction Temperature
140
TJ, JUNCTION TEMPERATURE (
°
C)
180 22041220 260
IC, COLLECTOR CURRENT (Adc)
1000 160 200 24012016 24
The graph above displays calculated MTBF in hours x ampere2
emitter current. Life tests at elevated temperatures have correlated
to better than ±10% of the theoretical prediction for metal failure.
Divide MTBF Factor by IC2 for MTBF in a particular application.
Breakdown Limited
MTBF Limited
5
MRF15090MOTOROLA RF DEVICE DATA
Figure 11. Input and Output Impedances with Circuit Tuned for Maximum Gain @ Pout = 90 Watts (PEP),
VCC = 26 Volts, ICQ = 250 mA, and Driven by Two Equal Amplitude Tones with Separation of 100 KHz
f
(MHz) Zin
(Ω)ZOL*
(Ω)
1400
1450
1500
1550
3.28 + j9.07
4.55 + j11.4
3.85 + j10.4
5.45 + j11.9
4.62 + j2.23
4.35 + j3.41
4.08 + j3.60
3.80 + j3.78
1600 6.20 + j12.2 3.55 + j3.84
Zin = Input impedance is a balanced base to
base measurement.
ZOL* = Conjugate of optimum load impedance
collector to collector into which the device
operates at a given output power, bias
current, voltage and frequency.
Zin
ZOL*
f = 1.4 GHz
1.6
1.55
1.45
1.5
Zo = 10
Ω
f = 1.4 GHz
1.45
1.5
1.55
1.6
Table 1. Common Emitter S–Parameters (for One Side of Push–Pull MRF15090) at VCE = 24 Vdc, IC = 2.5 Adc
fS11 S21 S12 S22
f
MHz |S11|φ|S21|φ|S12|φ|S22|φ
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
0.999
0.999
0.994
0.992
0.994
0.986
0.982
0.973
0.957
0.938
0.903
0.857
0.821
0.837
0.872
0.901
0.920
0.940
0.954
0.965
0.971
172
171
170
170
169
168
167
166
164
163
162
163
165
169
170
170
170
169
169
168
167
0.164
0.179
0.196
0.216
0.241
0.269
0.306
0.351
0.408
0.483
0.571
0.651
0.673
0.623
0.529
0.437
0.363
0.309
0.265
0.232
0.205
108
103
97
92
86
80
73
66
56
44
29
10
–14
–37
–56
–70
–81
–90
–98
–104
–110
0.006
0.007
0.007
0.008
0.008
0.009
0.010
0.011
0.012
0.013
0.014
0.014
0.013
0.011
0.009
0.008
0.007
0.008
0.008
0.009
0.010
72
69
66
63
62
57
51
45
33
22
7
–13
–40
–67
–104
–138
–165
173
150
139
132
0.957
0.956
0.948
0.940
0.935
0.924
0.915
0.905
0.888
0.876
0.859
0.855
0.877
0.902
0.922
0.931
0.932
0.930
0.932
0.930
0.929
173
172
172
171
171
170
170
170
170
170
171
173
174
174
173
172
171
170
169
169
168
MRF15090
6MOTOROLA RF DEVICE DATA
N1
Figure 12. Class AB Test Fixture Electrical Schematic
B1, B2, B3, B4 Ferrite Bead, Ferroxcube
C1 2.7 pF, B Case Chip Capacitor, ATC
C2 0.6–4.0 pF, Variable Capacitor , Johanson
C3, C4, C23, C24 18 pF, B Case Chip Capacitor, ATC
C5, C6, C22, C25 51 pF, Chip Capacitor, Murata Erie
C7, C8, C20, C21 1800 pF, Chip Capacitor, Kemit
C9, C10, C11 100 µF, Electrolytic Capacitor, Mallory
C12 5.1 pF, A Case Chip Capacitor, ATC
C13, C14, C18, C19 0.1 µF, Chip Capacitor, Kemit
C15 1.1 pF, B Case Chip Capacitor, ATC
C16, C17 470 µF, Electrolytic Capacitor, Mallory
C26 0.3 pF, B Case Chip Capacitor, ATC
D1 Diode, Motorola (MUR5120T3)
D2 Light Emitting Diode, Industrial Devices
L1 1 T urn, 24 AWG, 0.042″ ID Choke
L2, L3, L8, L9 3 Turn, 20 AWG, 0.126″ID Choke
L4, L5, L6, L7 12 T urns, 22 AWG, 0.140″ ID Choke
L10 3 T urns, 24 AWG, 0.046″ID Choke
N1, N2 Type N Flange Mount RF Connector, Omni Spectra
Q1, Q3 T ransistor, NPN, Motorola (MJD47)
Q2 T ransistor PNP Motorola (BD136)
R1, R2, R7, R8 10 Ω, 1/2 W, Resistor
R3 150 Ω, 1/2 W, Resistor
R4 2 x 66 Ω, 1/8 W, Chip Resistors in Parallel, Rohm
R5 93 Ω, 1/8 W, Chip Resistor, Rohm
R6 22 KΩ, 1/8 W, Chip Resistor, Rohm
TL1 to TL10 See Photomaster
Board Glass Teflon, Arlon GX–0300–55–22, εr = 2.55
C1
RF Input
L1 C2
TL1 TL10
TL5
TL4
TL7
TL6
C15
C12
C6
C4
L3
C8
L5
C3
L2
C5 B1
C7 R1
L4
C10 C13
C11 C14
C17 C19
L7
R8
DUT
R2
Vb
VCC
R5
Vb
Vbias
C9 Q1
Q2
D1
R3
R4 Q3
R6
D2
C16 C18
L6
R7 C20
C22
B3
L8
C24
L9
C23
TL8
TL9
C25
C26 L10
Coax 2
Balun 2
B4
B2
Balun 1
Coax 1
TL3
TL2
N2
RF Output
VCC
+
+
+
+
+
7
MRF15090MOTOROLA RF DEVICE DATA
N1
RF Input N2
RF Output
Figure 13. Class A Test Fixture Electrical Schematic
B1, B2, B5, B6 Long Bead, Fair Rite
B3, B4, B7, B8 Short Bead, Fair Rite
C1, C2, C3, C4 100 µF, Electrolytic Capacitor, Mallory
C5, C6, C17, C18 0.1 µF, Chip Capacitor, Kemit
C7, C8, C21, C22 18 pF, B Case Chip Capacitor, ATC
C9, C10, C20, C23 51 pF, Chip Capacitor, Murata Erie
C11, C12, C19, C24 1800 pF, Chip Capacitor, Kemit
C13 4.3 pF, B Case Chip Capacitor, ATC
C14 2.0 pF, B Case Chip Capacitor, ATC
C15, C16 470 µF, Electrolytic Capacitor , Mallory
C25 0.6–4 pF Variable Capacitor, Johanson
L1 3 Turns, 24 A WG, 0.046″ ID Choke
L2, L3, L4, L5 3 Turns, 20 AWG, 0.126″ ID Choke
L6 2 Turns, 24 A WG, 0.042″ ID Choke
N1, N2 Type N Flange Mount RF Connector, Omni Spectra
Q1, Q2 T ransistor NPN Motorola (BD135)
Q3, Q4 T ransistor PNP Motorola (BD136)
R1, R6 250 Ω, 1/8 W, Chip Resistor, Rohm
R2, R5 500 Ω, 1/4 W, Potentiometer, State of the Art
R3, R4 4.7 Ω, 1/8 W, Chip Resistor, Rohm
R7, R8 2 x 4.7 KΩ, 1/8 W, Chip Resistors
in Parallel, Rohm
R9, R14 1.0 Ω, 10 W, Resistor, Dale
R10, R13 38 Ω, 1 W, Resistor
R11, R12 75 Ω, 1/8 W, Chip Resistor, Rohm
R15, R16 2 x 10 Ω, 1/8 W, Chip Resistors in Parallel, Rohm
R17, R18, R19, R20 4 x 38 Ω, 1/8 W , Chip Resistors in Parallel, Rohm
Board Glass Teflon, Arlon GX–0300–55–22, εr = 2.55
L1
TL1 TL10
TL5
TL4
TL7
TL6
C14
C13
C8
L3
C7
L2
C9
C16
R20
DUT
VCC
C20
B7
L4
C22
L5
C21 TL8
TL9
C23
C25 L6
Coax 2
Balun 2
B8
Balun 1
Coax 1
TL
3
TL2
C17
R19
B5 C19
C15
B6
C18 C24
C4
R18
B4
B2
C6
C3
R17
B3
B1
C5
R16
C10
C12
C11
C2
R14
R13
R1
2
R8
R4
R5 Q2
Q4
R6
Vsupply
R2
Vsupply
R1
R3 R7
Q1 R9
R10
Q3
R11
R15
C1
VCC
+
+
+
+
+
+
MRF15090
8MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 375A–01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. BASE
5. EMITTER
12
34
5
D
Q
G
L
R
K
2 PL
–B–
–T–
M
B
M
0.25 (0.010) T
E
H
F
C
SEATING
PLANE
A
N
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.330 1.350 33.79 34.29
B0.375 0.395 9.52 10.03
C0.180 0.205 4.57 5.21
D0.320 0.340 8.13 8.64
E0.060 0.070 1.52 1.77
F0.004 0.006 0.11 0.15
G1.100 BSC 27.94 BSC
H0.082 0.097 2.08 2.46
K0.580 0.620 14.73 15.75
L0.435 BSC 11.05 BSC
N0.845 0.875 21.46 22.23
Q0.118 0.130 3.00 3.30
R0.390 0.410 9.91 10.41
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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MRF15090/D
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