KE C SEMICONDUCTOR BFS20/BF599 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. MAXIMUM RATINGS (Ta=25T) i. = ny ary as ay B 130+0.20/-0.15 CHARACTERISTIC SYMBOL] RATING | UNIT C 130 MAX D 0.45+0.15/-0.05 Collector-Base Voltage Vso AQ Vv E_|_240+0.50/-020 H 0.95 Collector-Emitter Voltage Vero 20 Vv pS 10 10/008 L 0.55 BFS20 4 a i M 0.20 MIN Emitter-Base Voltage Vigo = Vv n_ | 1.00+0.20/-0.10 BF599 5 Ad 4 P v Collector Current Ic 25 mA dott Emitter Current Ie -25 mA 1 EMTER 2. BASE Collector Power Dissipation Pe 200 mW 8 OES Junction Temperature Tj 150 Cc SOT23 Storage Temperature Range Tig -65~ 150 Cc ELECTRICAL CHARACTERISTICS (Ta=25T) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector-Base _ _ _ _ Breakdown Voltage Viswcso | Ic=10HA, In=0 40 Vv Collector-Emitter _ _ - _ _ Breakdown Voltage Vierczo | Icm2mA, Is=0 20 Vv Emitter-Base BFS20 _ _ 4 Breakdown Voltage BF599 Visrieso | Te=10HA, Ic=0 5 Vv BFS20 Vcn=20V, In=0 - - 100 nA Collector Cut-off leno Ven=20V, In=0, Ta=150C _ - 10 HA Current BF599 Vcp=40V, I[n=0 - - 100 nA DC Current Gain hr Vor=10V, Ic=7mA AQ - - - . BFS20 - 750 900 Base-Emitter Voltage Virion) Vcr=l0V, Ic=7mA = mV BF599 - 750 - . BFS20 275 550 - Transition Frequency fr Vcr=10V, Ic=7mA, f=100MHz MHz BF599 - 550 - Collector Output Capacitance Cob Vcn=lOV, f=1MHz, Ip=0 - 0.35 - pF Marking MARK SPEC TYPE MARK Type Name H Lot_No. L Lot_No. \ i rt BFS20 Gl GC 1 | type Name LC D = BF599 G2 = 1999. 11. 30 Revision No : 2 KEC V1