IRF1405ZS-7PPbF IRF1405ZL-7PPbF HEXFET(R) Power MOSFET Features D Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free l l l l l l IRF1405ZS-7PPbF IRF1405ZS-7PPbF IRF1405ZL-7PPbF D2Pak 7 Pin Standard Pack Form Quantity TO-263CA 7 Pin Orderable Part Number Note EOL notice # 289 Tube 50 IRF1405ZS-7PPbF Tape and Reel Left 800 IRF1405ZSTRL7PP Tube 50 IRF1405ZL-7PPbF 2 D Pak-7Pin ID = 120A S S (Pin 2, 3, 5, 6, 7) G (Pin 1) This HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Package Type RDS(on) = 4.9m G Description Base part number VDSS = 55V TO-263CA EOL notice # 288 Absolute Maximum Ratings Max. Parameter Units Continuous Drain Current, V GS @ 10V (Silicon Limited) 150 I D @ TC = 100C Continuous Drain Current, V GS @ 10V (See Fig. 9) 100 I D @ TC = 25C Continuous Drain Current, V GS @ 10V (Package L imited) 120 I DM Pulsed Drain Current 590 P D @TC = 25C Maximum Power Dissipation 230 W Linear Derating Factor 1.5 W/C I D @ TC = 25C c V GS E AS Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) E AS (tested) Single Pulse Avalanche Energy Tested Value I AR Avalanche Current E AR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range c h d A 20 V 250 mJ 810 See Fig.12a,12b,15,16 g A mJ -55 to + 175 C 300(1.6mm from case) Soldering Temperature, for 10 seconds Thermal Resistance j Parameter RJC Junction-to-Case RJA Junction-to-Ambient (PCB Mount, steady state) i Typ. Max. --- 0.65 --- 40 Units C/W HEXFET(R) is a registered trademark of International Rectifier. 1 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback October 29, 2014 IRF1405ZS/L-7PPbF Static @ TJ = 25C (unless otherwise specified) Parameter V (BR)DSS Drain-to-Source Breakdown Voltage Min. Typ. Max. Units 55 --- --- V Conditions V GS = 0V, I D = 250A V DSS/TJ Breakdown Voltage Temp. Coefficient --- 0.054 --- V/C Reference to 25C, I D = 1mA RDS(on) SMD Static Drain-to-Source On-Resistance --- 3.7 4.9 m V GS = 10V, I D = 88A V GS(th) Gate Threshold Voltage 2.0 --- 4.0 V V DS = V GS, I D = 150A gfs Forward Transconductance 150 --- --- S V DS = 25V, I D = 88A I DSS Drain-to-Source Leakage Current --- --- 20 --- --- 250 Gate-to-Source Forward Leakage --- --- 200 Gate-to-Source Reverse Leakage --- --- -200 Qg Total Gate Charge --- 150 230 Qgs Gate-to-Source Charge --- 37 --- Qgd Gate-to-Drain ("Miller") Charge --- 64 --- t d(on) Turn-On Delay Time --- 16 --- V DD = 28V tr Rise Time --- 140 --- I D = 88A t d(off) Turn-Off Delay Time --- 170 --- tf Fall Time --- 130 --- LD Internal Drain Inductance --- 4.5 --- I GSS A nA e V DS = 55V, V GS = 0V V DS = 55V, V GS = 0V, TJ = 125C V GS = 20V V GS = -20V I D = 88A nC V DS = 44V V GS = 10V ns RG = 5.0 V GS = 10V nH e d Between lead, D 6mm (0.25in.) G LS Internal Source Inductance --- 7.5 --- Ciss Input Capacitance --- 5360 --- Coss Output Capacitance --- 1310 --- V DS = 25V Crss Reverse Transfer Capacitance --- 340 --- = 1.0MHz, See Fig. 5 Coss Output Capacitance --- 6080 --- Coss Output Capacitance --- 920 --- V GS = 0V, V DS = 44V, = 1.0MHz Coss eff. Effective Output Capacitance --- 1700 --- V GS = 0V, V DS = 0V to 44V Min. Typ. Max. from package and center of die contact S V GS = 0V pF V GS = 0V, V DS = 1.0V, = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current (Body Diode) I SM Pulsed Source Current c (Body Diode) --- --- 150 --- --- 590 Units Conditions D MOSFET symbol A showing the G integral reverse p-n junction diode. V SD Diode Forward Voltage --- --- 1.3 V TJ = 25C, I S = 88A, V GS = 0V t rr Reverse Recovery Time --- 63 95 ns TJ = 25C, I F = 88A, V DD = 28V Qrr Reverse Recovery Charge --- 160 240 nC di/dt = 100A/s S e e Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by T Jmax, starting TJ = 25C, L=0.064mH, RG = 25, IAS = 88A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. This is applied to D 2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ of approximately 90C. Solder mounted on IMS substrate. 2 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback October 29, 2014 IRF1405ZS/L-7PPbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 4.5V 10 BOTTOM 4.5V 10 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 1 0.1 1 10 1 100 1000 0.1 V DS, Drain-to-Source Voltage (V) 10 100 1000 Fig 2. Typical Output Characteristics 150 Gfs, Forward Transconductance (S) 1000 ID, Drain-to-Source Current () 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 T J = 175C 10 T J = 25C 1 VDS = 25V 60s PULSE WIDTH 0.1 0 2 4 6 8 10 12 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V www.irf.com (c) 2014 International Rectifier 125 T J = 25C 100 T J = 175C 75 50 V DS = 10V 25 300s PULSE WIDTH 0 0 25 50 75 100 125 150 175 200 ID,Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current Submit Datasheet Feedback October 29, 2014 IRF1405ZS/L-7PPbF 100000 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 88A C, Capacitance(pF) C oss = C ds + C gd 10000 Ciss Coss Crss 1000 100 VDS= 44V VDS= 28V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 150 200 10000 ID, Drain-to-Source Current (A) 1000 ISD, Reverse Drain Current (A) 100 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage T J = 175C 100 T J = 25C 10 VGS = 0V 1 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 50 QG Total Gate Charge (nC) www.irf.com (c) 2014 International Rectifier OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100sec 100 1msec 10 DC 1 10msec Tc = 25C Tj = 175C Single Pulse 0.1 0.01 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback October 29, 2014 IRF1405ZS/L-7PPbF 150 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 ID, Drain Current (A) 125 100 75 50 25 0 25 50 75 100 125 150 ID = 88A VGS = 10V 2.0 1.5 1.0 0.5 175 -60 -40 -20 0 T C , Case Temperature (C) 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 J SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R1 R1 J 1 1 R2 R2 2 R3 R3 3 2 C 3 Ci= i/Ri Ci i/Ri Ri (C/W) 0.1707 i (sec) 0.000235 0.1923 0.000791 0.2885 0.008193 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback October 29, 2014 1 IRF1405ZS/L-7PPbF 15V D.U.T RG VGS 20V + V - DD IAS A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) DRIVER L VDS 1000 ID 14A 23A BOTTOM 88A TOP 800 600 400 200 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2F 12V .3F D.U.T. + V - DS VGS(th) Gate threshold Voltage (V) 4.5 VG 4.0 3.5 3.0 2.5 2.0 ID = 150A ID = 250A ID = 1.0mA ID = 1.0A 1.5 1.0 -75 -50 -25 VGS 0 25 50 75 100 125 150 175 200 T J , Temperature ( C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 www.irf.com (c) 2014 International Rectifier Fig 14. Threshold Voltage vs. Temperature Submit Datasheet Feedback October 29, 2014 IRF1405ZS/L-7PPbF 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) 100 0.01 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 300 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 88A 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy vs. Temperature 7 www.irf.com (c) 2014 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Submit Datasheet Feedback October 29, 2014 IRF1405ZS/L-7PPbF D.U.T Driver Gate Drive + - P.W. + D.U.T. ISD Waveform Reverse Recovery Current + V DD * dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - Period + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback October 29, 2014 IRF1405ZS/L-7PPbF D2Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ D2Pak - 7 Pin Part Marking Information Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 9 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback October 29, 2014 IRF1405ZS/L-7PPbF TO-263CA 7 Pin Long Leads Package Outline Dimensions are shown in millimeters (inches) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 10 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback October 29, 2014 IRF1405ZS/L-7PPbF D2Pak - 7 Pin Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 11 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback October 29, 2014 IRF1405ZS/L-7PPbF Qualification information Industrial Qualification level (per JEDEC JESD47F guidelines) MS L1 2 D Pak-7PIN Moisture Sensitivity Level (per JEDE C J-S T D-020D ) TO-263CA 7Pin RoHS compliant Yes Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release. Revision History Date Comments * Updated data sheet with IR corporate template. * Updated D2-Pak 7-Pin ordering information to reflect the End-Of-life of the Tube packaging option (EOL notice #289) 10/29/2014 * Removed TO-263CA package (EOL notice # 288). * Removed RJA = 62 C/W & R = 0.5 C/W from thermal resistance table on page 1( does not apply to D2-Pak 7- Pin). * Updated part marking on page 9 . IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback October 29, 2014