Le FRELEREE IRR NNNITUTETERTpeeTevNR A Hn BY TYE! OK MOTOROLA SC (DIODES/OPTO) 25E D me 6367255 o080%le 2 MmT26-1S thru z t Designer's Data Sheet 2N4204. ape = Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors SCRe . . . . . 100 AMPERE PULSE ., fast switching, high-voltage Thyristors especially designed for pulse modulator 300 thru 800 VOLTS applications in radar and other similar equipment. Guaranteed Limits on All Critical Parameters High-Voltage: VornM = 300 to 800 Voits @ Maximum Turn-On Times Specified 300 to 400 ns Repetitive Pulse Current to 100 Amperes @ Stable Switching Characteristics Over an Operating Temperature Range From 65 to + 105C Pulse Repetition Rates as High as 20,000 pps @ JAN Versions Available CASE 63-03 (TO-64) STYLE 1 MAXIMUM RATINGS Rating Symbot Vatue Unit Peak Raverse Blocking Voltage, Note 1 (Ty = 105C) VRRM 50 Volts *Peak Forward Blocking Voltage, Note 1 2N4199 VDRM 300 Volts (Te = 105C) 2N4200 ; 400 2N4201 500 ves 2N4202 600 2N4203 700 2N4204 800 Repetitive Peak On-State Current ITRM 100 Amps (PW = 3 us, Duty Cycle = 0.6%, To = 85C) ; Continuous On-State Current (To = 65C) IT 5 Amps Current Application Rate, Note 2 di/dt 5000 Alps Peak Forward Gate Power Pacem 20 Watts Average Forward Gate Power PQF(AV} ae Watt Peak Forward Gate Current iGEM 5 Amps Peak Gate Voltage Forward VGEM 10 Volts Reverse, Note 3 VGAM 10 Operating Junction Temperature Range Ty *S Blocking State ~5to +105 Conducting State - 65 to +200 Storage Temperature Range ; - Tstg -65 to +200 c Stud Torque - _ 15 in. Ib. "Indicates JEDEC Registered Data. Notes: 1. Characterized for unilateral applications where reverse blocking capability is not Important. Higher voltage units available upon request. Yprm and VanM may be applied as a continuous de voltage for zero or negative gate voltage but positive gate voltage must not be applied concurrently with a negative potential on the anade. When checking blocking capability, do not permit the applied voltage to exceed the rated voltage. 2. Minimum Gate Trigger Pulse: ig = 200 mA, PW = 1 us, t; = 20 ns. 3. Do not reverse bias gate during forward conduction if anode current exceeds 10 amperes. Dealgners Data for Worst Case Conditions The Designers Data Sheets permit the dasign of mast circui tiraly from the inf i ented. Limit curves representing boundartes on device characteristics are givan to facilitate worst case design. MOTOROLA THYRISTOR DEVICE DATA 3-31 .MOTOROLA SC (DIODES/OPTO) a25E D = &36b7255 0080913 4 2N4199 thru 2N4204 THERMAL CHARACTERISTICS 7T-as- Ss Characteristic Symbol _ Max Unit *Tharmal Resistance, Junction to Case : Rac 3 SCAN ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.) ; Characteristic Fig. No. Symbo! Min Max Unit *Peak Forward or Reverse Blocking Current 17 lonM: RRM _ 2 mA (Rated Vpay or Vrrv. gate open) Tc = 105C Gate Trigger Current (Continuous de) 14 ler mA {Anode Voltage = 7 Vde, RL = 100 ohms, To = 25C) - 50 *(Anode Voltage = 7 Vde, RL = 100 ohms, To = - 65C) ; _ 100 Gate Trigger Voltage (Continuous de) 12 Ver . Volts *(Anade Voltage = rated VoRM. RE = 100 ohms, Te = 105C) 0.2 _ (Anode Voltage = 7 Vdc, RL = 100 ohms, Tc = 25C) _ 1B *(Anode Voltage =7 Vde, Ry, = 100 ohms, Te = ~68C) : _ 2 | *Holding Current 18 lH 3 - mA (Anode Voltage = 7 Vde, gate. open, Tc = 105C) a *Forward On" Voltage 8 VTM 2.6 _ Volts (ttm = 5 Adc, PW = 1 ms max, Duty cycle = 1%} *Dynamic Forward On Voltage 7 VIM jo 25 Volts (0.8 ps after 50% decay point on dynamic forward voltage waveform) Forward Current: 30 A pulse. Gate Pulse: at 200 mA, PW = 1 ys, tr = 20 ns *Jurn-On Time ity = 30A ns Delay Time All types 1,9 ta _ 200 Rise Time 2N4199 and 2N4200 1,11 tr ~ 200 2N4201 _ 150 2N4202 _ 130 2N4203 and 2N4204 - 100 *Pulsa Turn-Off Time 2, 13 tg - 20 ps Test Conditions: PFN discharge; Forward Current = 30 A pulse; Reverse Current = 5A, Te = 85C, dv/dt = 260 V/us.to Rated Vpae: Reverse anode voltage during turn-off interval = 0 V; Reverse gate bias during turn-off interval = 6 V. *Forward Voltage Application Rate (Linear Rise of Valtage) 16 dv/dt 250 Vipes (Tc = 105C, gate open, Vp = Rated Voriy) *JEDEC Registered Data, MOTOROLA THYRISTOR DEVICE DATA 3-32MOTOROLA SC (DIODES/OPTO) FIGURE 1 TURN-ON TIME Va & 472 200H Ia a 10% q 0. ADJUSTED Va FOR RATED VornmM 1 BE y iA Bu ta 4 *Fwo 1N4937 fast-recovery diodes in series each shunted by a 180 kM rasistor. ny 2 Qo it, PEAK FORWARD PULSE CURRENT {AMP} 6.0 Ons = 2 FIGURE 4 DERATING USING NO SWITCHING LOSSES 100 0 40 1d.as 20 2S5E D MM 6367255 0080914 & mm : 2N4199 thru 2N4204 TEST CIRCUITS T-25- IS FIGURE 2 TURN-OFF TIME PEN, 29 = 2.0% 200M (+) lal. <20ns wy : ay? RE-APPLIED Y Wns20s Taicacen FORWARD VOLTAGE, ORF dv/dt= 250 V/us 200 mA LINEAR lop | i TO RATED Vppm dv/dt el e SOURCE} >) +B 0(-) TRIGGER 200 H 90% + ONT . 30.4 ON" DUT ia j oe > 5.0A . C= 1.0KF t jo es Gea 6 = Ss < t, Ag = 1.093 3A = 2.02 Vak oft WA o_ : BL = 1.02 FIGURE 3 MAXIMUM ALLOWABLE FORWARD PULSE CURRENT = 00 Afus MAX Te = 25C 3 Data is based upon a peak junction tempetature of Juaction temperature must be ng higher than 1059C prior to application of forward blocking voltage. 40 (G0ns 200 400 WOus = 2.0 4.0 Wys 20 40 10dus 200 400 ims t, TIME OR PULSE WIOTH FIGURE 5 DERATING USING TYPICAL SWITCHING LOSSES Pw, PULSE WIDTH {us} = TTT = too 3 NY Ty = 200C 44 s so s NN To =8sec 1 3 a Te = 85C Z 2 w riiiit}) & & N =f = 100 He 3 3 N = 600 Hz a w 80 uw NI RAY L 1.0 kHz = 3 60 N NK N SP Sh / L 2.0 kHe4 Zz 2 SONS 2 & Data is based on NL ON. Yi < 30 3 steady-state forward drop dat&\] N\ te a = (Figure 8) at Ty = 200C and Ni NA SN 2 = data of Figure 6. Turn-an power NM ae me NS = 2 5 Uansiants are neglected. The curves N aN N = 2 indicate maximum capability that 20 KN KHZ NS.0 kHz 3 Oata is indicative of capability 3 can ba apptaached using delay reactor IN N = PFH circuits. Actual circuits ss 20) cicults rer h \ N, = 10] checked as indicated in the note. F 10 20 30 50 7.0 10 2030 50 70 100 100 $00 ik 2k 5k Wk 20k f, PULSE REPETITION RATE (Hz) MOTOROLA THYRISTOR DEVICE DATA 3-33er Renner pet ny MOTOROLA SC (DIODES/OPTO) 2SE D 2N4199 thru 2N4204 MM! 64567255 0o0a4051S 6 mm TAS AIS FIGURE 6 NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ait), NORMALIZED dyc(t} (EFFECTIVE TRANSIENT THERMAL RESISTANCE) r= 2 O= 0 (SINGLE 0 1 ys t, TIME OR PULSE WIDTH. FORWARD ON VOLTAGE DATA FIGURE 7 TYPICAL OYNAMIC FORWARD ON VOLTAGE fe = 200mA Tq = 25C Vax = 800 ori Vax = 600 momen Vax = 40Y ax = 4001 To &Y na = 4100 TO S00 ~ 2 it. FORWARD PULSE CURRENT (AMP) - of anode at specified time feference point} Q 100 200 400 400 50a 600 700 aco vr, TRANSIENT FORWARD ON VOLTAGE (VOLTS) DESIGN NOTE CONTINUED AT (tq) = {1000 (0.0205 + (1 - 5.28 103) 0.27 + 6.25 + 103 0,27} + 700 [(1 - 7.78 * 103) 0.27 + 7.78 109 - 0.2711 9 = 93.51%C 1000 AT(ts) - ( 1000 [0.032 + {1 ~ 5.25 + 103) 0.27 + 5.28 + 1093 - 0.27 - 0.0205} + 700 10.025 + (4 - 7.75 * 403) 0.27 + 7.75 103 ~ 0,271] 3 = 105.6%C @ = = a = 400 ta a on Py - Py ; T4 te To] ; Po H Po Pavg- ava beta 12 J to ita ft2 1 Itq [ts 0 08 10 15 ted BUTY co . t CYCLE co a D=ta/tp staf FIGURE A SIMPLE MODEL FIGURE B ~ MORE ACCURATE MODEL MOTOROLA THYRISTOR DEVICE DATA 3-34 0.2 o4 Wns 20 - 49 us 20 49 100es 200 400 Tdims 2.0 4.0 10ms 20 40 STATE V. Pacts) = OCW MAX a 22C TYP 100 ms FIGURE 8 MAXIMUM STEADY-STATE 100 90 am oo 5 ip, INSTANTANEOUS PEAK FORWARD PULSE CURRENT (AMP) wn o 04123466789 01112 ve, FORWARD "ON" VOLTAGE (VOLTS) 20 25 30 35 40 46 50 t, TIME [us) FIGURE C ~ AN ACTUAL TRANSIENT POWER PULSEMOTOROLA SC (DIODES/OPTO) e5E D M@ 6367255 0080516 T = - 2N4199 thru 2N4204 . Toa S-/ SWITCHING CHARACTERISTICS TRIGGERING CHARACTERISTICS FIGURE 9 DELAY TIME FIGURE 10 TYPICAL PULSE TRIGGER CHARGE/CURRENT 500 = = a VAK=7 Vak = 400V,!TM 330A ~ co 0.1 wF CAPACITANCE MAXIMUM DISCHARGE CIRCUIT Ty = -65 TO +105C a a JF = 3 we S tg. DELAY TIME (ns) 3 ~ S Ogg, GATE TRIGGER CHARGE (nC} 3 Igy, GATE TRIGGER CURRENT (mA) TIME OF = 20 ns) are minimum values to cause a typical 50 72 100 200 400 soo = 790-1000 0.05 6.07 0.1 02 05 O87 10 20 30 50 1g, GATE CURRENT (mA} 7, PULSE WIDTH {us} FIGURE 11 CURRENT RISE TIME FIGURE 12 0C GATE TRIGGER VOLTAGE Ol ne ANCE 2 2 ty 25 TO 100 AMPS = a (SEE FIG. 1 - Ay, VARIED) a = 5 yw S a Ty = 108C fe Be wi @ 100 3 ce c - 2 uw a i 7 70 & : g 200 300 = 400. 500 600 700 BGO 20-60 40 -20 OF 2 40 60 8 100 120 VAK, ANODE-TO-CATHODE VOLTAGE (VOLTS} Ty, JUNCTION TEMPERATURE (C) : FIGURE 13 TYPICAL TURN-OFF TIME FIGURE 14. OC GATE TRIGGER CURRENT 100 3 70 4 = aD = 80 = = 10 e = 1.0 = Ww re g 20 w 60 = 4 - ov mi z 6Vv & . - < 5 oF 10 TAGE 400 Vins TO Vo RM & ANODE CURRENT =5A TIME< 46 40 -20 0 2 | 40 60 a0 = 100 40-60 -40 20 O 2 40 6G 8 100 120 Tc, CASE TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) 7 aime oy MOTOROLA THYRISTOR DEVICE DATA 3-35MOTOROLA SC (DIODES/OPTO) FIGURE 15 TYPICAL BLOCKING VOLTAGE DERATING n > GA Ty = 108C = 2 a 2S tn PI) oe 0.2 100 . NORMALIZEG FORWARD BLOCKING VOLTAGE (VOLTS) 200 dv/dt, LINEAR RATE OF APPLIED VOLTAGE (V/us} 300 700 1000 2000 3000 = 5000 Vo Vorm FIGURE 17 FORWARD BLOCKING CURRENT we SE S eS8s BS 8 ipnm, OFFSTATE CURRENT (pA) 02 60 40 -20 a 20 40 0 Ty, JUNCTION TEMPERATURE (9C} 80 108120 FIGURE 19 ~ TYPICAL ANODE-TO-CATHODE CAPACITANCE 50 oe o ny 2 o ~~ Ca. ANODE-TO-CATHODE CAPACITANCE (pF) gy 1 2 5 10 20 50 100 200 VAK, ANODE-TO.CATHODE VOLTAGE (VOLTS) 500 1000 Re erscee Se a , . 2 : . te Po gre tg Te 3-36 re ee 7 ese D 2N4199 thru 2N4204 du/dr, RATE OF APPLIED VOLTAGE (V/ys} iy, HOLDING CURRENT (mA) Cex, GATE-TO-CATHODE CAPACITANCE (pF) MOTOROLA THYRISTOR DEVICE DATA M &56725S GOs0tL? 1 a TAS FIGURE 16 TYPICAL LINEAR dv/dt CAPABILITY Vo =Vo 2000 1000 700 500 400 04 02 O38 OS 07 10 20 630 VGk. GATE-TO-CATHODE REVERSE VOLTAGE (VOLTS) 5.0 FIGURE 18 ~ HOLOING CURRENT TYPICAL @ Ty 40.5 0 -) 2 3 4 Vax, GATE-TO.CATHODE VOLTAGE (VOLTS) FIGURE 20 ~ TYPICAL GATE-TO-CATHODE CAPACITANCE 240 0 2 4 6 8 VGK, GATE-TO-CATHOOE VOLTAGE (VOLTS) fe tors Bees