CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1995 4-27
SEMICONDUCTOR
RFD15P05,
RFD15P05SM, RFP15P05
15A, 50V, Avalanche Rated, P-Channel
Enhancement-Mode Power MOSFETs
Features
• 15A, 50V
•r
DS(ON) = 0.150Ω
•
Temperature Compensating
PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Description
The RFD15P05, RFD15P05SM, and RFP15P05 P-Channel
power MOSFETs are manufactured using the MegaFET pro-
cess. This process which uses feature sizes approaching
those of LSI integrated circuits, gives optimum utilization of
silicon, resulting in outstanding performance. They were
designed for use in applications such as switching regula-
tors, switching converters, motor drivers, and relay drivers.
These transistors can be operated directly from integrated
circuits.
Formerly developmental type TA09833.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
RFD15P05 TO-251AA F15P05
RFD15P05SM TO-252AA F15P05
RFP15P05 TO-220AB RFP15P05
NOTE: When ordering, use the entire part number . Add the suffix 9A
to obtain the TO-252AA variant in the tape and reel, i.e.,
RFD15P05SM9A.
December 1995
Packaging
JEDEC TO-220AB
JEDEC TO-251AA
JEDEC TO-252AA
Symbol
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
SOURCE
DRAIN (FLANGE) GATE
DRAIN
GATE
SOURCE
DRAIN (FLANGE)
D
G
S
Absolute Maximum Ratings TC = +25oC
RFD15P05, RFD15P05SM,
RFP15P05 UNITS
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS -50 V
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR -50 V
Gate Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
15
Refer to Peak Current Curve A
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
0.533 W
W/oC
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ-55 to +175 oC
Soldering Temperature of Leads for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL260 oC
File Number 2387.3
4-28
Specifications RFD15P05, RFD15P05SM, RFP15P05
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V -50 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA -2.0 - -4.0 V
Zero Gate Voltage Drain Current IDSS VDS = -50V,
VGS = 0V TC = +25oC---1µA
T
C
= +150oC - - -50 µA
Gate-Source Leakage Current IGSS VGS = ±20V - - 100 nA
On Resistance rDS(ON) ID = 15A, VGS = -10V - - 0.150 Ω
Turn-On Time tON VDD = -25V, ID = 7.5A
RL = 3.3Ω, VGS = -10V
RGS = 12.5Ω
- - 60 ns
Turn-On Delay Time tD(ON) -16- ns
Rise Time tR-30- ns
Turn-Off Delay Time tD(OFF) -50- ns
Fall Time tF-20- ns
Turn-Off Time tOFF - - 100 ns
Total Gate Charge QG(TOT) VGS = 0V to -20V VDD = -40V,
ID = 15A,
RL = 2.67Ω
- - 150 nC
Gate Charge at -10V QG(-10) VGS = 0V to -10V - - 75 nC
Threshold Gate Charge QG(TH) VGS = 0V to -2V - - 3.5 nC
Input Capacitance CISS VDS = -25V, VGS = 0V
f = 1MHz - 1150 - pF
Output Capacitance COSS - 300 - pF
Reverse Transfer Capacitance CRSS -56- pF
Thermal Resistance
Junction to Case RθJC TO-220AB, TO-251AA, TO-252AA - - 1.875 oC/W
Thermal Resistance
Junction to Ambient RθJA TO-251AA, TO-252AA - - 100 oC/W
TO-220AB - - 80 oC/W
Source-Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage VSD ISD = -15A - - -1.5 V
Reverse Recovery Time tRR ISD = -15A, dISD/dt = -100A/µs - - 125 ns
4-29
RFD15P05, RFD15P05SM, RFP15P05
Typical Performance Curves
FIGURE 1. SAFE OPERATING AREA CURVE FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
-100
-10
-1-1 -10 -100
VDS , DRAIN-TO-SOURCE VOLTAGE (V)
TC = +25oC
ID, DRAIN CURRENT (A)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
100µs
VDSS MAX = -50V
1ms
100ms
DC
10ms
t, RECTANGULAR PULSE DURATION (s)
10-5 10-3 10-2 10-1 100101
10-4
0.01
0.1
1
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
PDM
t1t2
SINGLE PULSE
.01
.02
.05
0.1
0.2
0.5
2
THERMAL RESPONSE
ZθJC, NORMALIZED
-4
-8
025 50 75 100 125 150
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
-12
-16
175 10-5 10-4 10-3 10-2 10-1 100101
-100
t, PULSE WIDTH (s)
TC = +25oC
IDM, PEAK CURRENT CAPABILITY (A)
VGS = -20V
VGS = -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE +25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
-10
II
25
175 TC
–
150
--------------------
=
-200
00.0 -1.5 -3.0 -4.5 -6.0 -7.5
ID, DRAIN CURRENT (A)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
PULSE DURATION = 250µs, TC = +25oC
VGS = -5V
VGS = -6V
VGS = -8V
VGS = -7V
VGS = -10V
-10
-20
-40
VGS = -4.5V
VGS = -20V
-30
0.0 -2.0 -4.0 -6.0 -8.0 -10.0
VGS, GATE-TO-SOURCE VOLTAGE (V)
ID(ON), ON STATE DRAIN CURRENT (A)
0
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
-55oC
VDD = -15V
+175oC
+25oC
-8
-16
-32
-24
-40
4-30
FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION
TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE FIGURE 10. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING CURVE
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO
APPLICATION NOTE AN7254 AND AN7260
Typical Performance Curves
(Continued)
PULSE DURATION = 250µs, VGS = -10V, ID = -15A
2.0
1.5
1.0
0.5
0.0-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
rDS(ON), NORMALIZED ON RESISTANCE
2.5
200
VGS = VDS, ID = -250µA
2.0
1.5
1.0
0.5
0.0
-80 -40 0 40 80 160120
TJ, JUNCTION TEMPERATURE (oC)
VGS(TH), NORMALIZED GATE
200
THRESHOLD VOLTAGE
ID = -250µA
2.0
1.5
1.0
0.5
0.0-80 -40 0 40 80 120 160
BVDSS, NORMALIZED DRAIN-TO-SOURCE
BREAKDOWN VOLTAGE
TJ, JUNCTION TEMPERATURE (oC) 200 TC, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
0.0 0 25 50 75 100 175
0.2
0.4
0.6
0.8
1.0
1.2
125 150
VGS = 0V, f = 1MHz
1400
1000
800
400
00-5 -10 -15 -20 -25
C, CAPACITANCE (pF)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
CISS
COSS
CRSS
200
600
1200
-50
-37.5
-25
-12.5
0
-10.0
-7.5
-5.0
-2.5
0.0
20 IG(REF)
IG(ACT) 80 IG(REF)
IG(ACT)
t, TIME (µs)
VDD = BVDSS VDD = BVDSS
RL = 3.33Ω
IG(REF) = -0.65mA
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
VGS = -10V
RFD15P05, RFD15P05SM, RFP15P05
4-31
Test Circuits and Waveforms
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
(Continued)
-10
-50
-10.1 1 10 100
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
STARTING TJ = +150oC
STARTING TJ = +25oC
If R = 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
tAV = (L) (IAS) / (1.3RATED BVDSS - VDD)
If R ≠ 0
0.01Ω
L
IL
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
tP
-VGS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
VDD
VDS
-VGS
0V
RGS
DUT
RL
tD(ON)
tR
90%
10%
VDS 90%
tF
tD(OFF)
tOFF
90%
50%
50%
10%
PULSE WIDTH
VGS
tON
10%
RFD15P05, RFD15P05SM, RFP15P05
4-32
Temperature Compensated PSPICE Model for the RFD15P05, RFD15P05SM, RFP15P05
.SUBCKT RFP15P05 2 1 3 REV 9/06/94
CA 12 8 1.6e-9
CB 15 14 1.47e-9
CIN 6 8 1.09e-9
DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -73.0
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 6.73e-9
LSOURCE 3 7 6.69e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 63.6e-3
RGATE 9 20 7.37
RIN 6 8 1e9
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 46.5e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.65
ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/35,4))}
.MODEL DBDMOD D (IS = 1.27e-13 RS = 1.62e-2 TRS1 = 1.35e-3 TRS2 = -4.33e-6 CJO = 1.25e-9 TT = 7.97e-8)
.MODEL DBKMOD D (RS = 2.54e-1 TRS1 = 4.54e-3 TRS2 = -1.12e-5)
.MODEL DPLCAPMOD D (CJO = 285e-12 IS = 1e-30 N = 10)
.MODEL MOSMOD PMOS (VTO = -3.78 KP = 6.97 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 9.15e-4 TC2 = -4.0e-7)
.MODEL RDSMOD RES (TC1 = 5.47e-3 TC2 = 1.37e-5)
.MODEL RSCLMOD RES (TC1 = 1.9e-3 TC2 = -7.5e-6)
.MODEL RVTOMOD RES (TC1 = -3.71e-3 TC2 = -2.41e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.65 VOFF = 1.65)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.65 VOFF = 3.65)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.60 VOFF = -4.40)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.40 VOFF = 0.60)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options; authored by William J. Hepp and C. Frank Wheatley.
MOS1
10 DPLCAP
RDRAIN
DBREAK
LDRAIN
DRAIN
LSOURCE
DBODY
RSOURCE
EBREAK
MOS2
RIN CIN
VTO
ESG
CA
EVTO
RGATE
GATE
LGATE
52
11
21
8
6
16
20
9
118
8
6
8
+
-
+
-
+
-
+
-
3
SOURCE
RBREAK
RVTO
VBAT
+
-
19
IT
EDSEGS
S1A S2A
S2BS1B
CB
1817
7
12 15
14
13
13
814
13
5
8
+
-
+
-
5
51
RSCL2 RSCL1
ESCL
6
8
17
18
RFD15P05, RFD15P05SM, RFP15P05
