LBSS123LT1–1/4
LESHAN RADIO COMPANY, LTD.
1
3
SOT
-
23
2
LBSS123LT1
3
1
2
Gate
Source
Drain
N-CHANNEL POWER MOSFET
LBSS123LT1
FEATURE
ƽ Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device Marking Shipping
LBSS123LT1 SA 3000/Tape&Reel
LBSS123LT1G SA
(Pb-Free) 3000/Tape&Reel
LBSS123LT3 SA 10000/Tape&Reel
LBSS123LT3G SA
(Pb-Free) 10000/Tape&Reel
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage VDSS 100 Vdc
Gate–Source Voltage
– Continuous
– Non–repetitive (tp≤ 50 µs) VGS
VGSM
±20
±40 Vdc
Vpk
Drain Current
Continuous (Note 1.)
Pulsed (Note 2.) ID
IDM 0.17
0.68
Adc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5
Board (Note 3.)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction to
Ambient RqJA 556 °C/W
Junction and Storage Temperature TJ,T
stg –55 to +150 °C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width v 300 ms, Duty Cycle v 2.0%.
3. FR–5 = 1.0 0.75 0.062 in.
LESHAN RADIO COMPANY, LTD.
LBSS123LT1–2/4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250 µAdc) V(BR)DSS 100 – – Vdc
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 100 Vdc) TJ = 25°C
TJ = 125°C
IDSS –
––
–15
60
µAdc
Gate–Body Leakage Current
(VGS = 20 Vdc, VDS = 0) IGSS – – 50 nAdc
ON CHARACTERISTICS (Note 4.)
Gate Threshold Voltage
(VDS = VGS,I
D = 1.0 mAdc) VGS(th) 0.8 – 2.8 Vdc
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 100 mAdc) rDS(on) – 5.0 6.0 Ω
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc) gfs 80 – – mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss – 20 – pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss – 9.0 – pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss – 4.0 – pF
SWITCHING CHARACTERISTICS(4)
Turn–On Delay Time (VCC = 30 Vdc, IC = 0.28 Adc, td(on) – 20 – ns
Turn–Off Delay Time
(VCC 30 Vdc
,
IC0
.
28 Adc
,
VGS = 10 Vdc, RGS = 50 Ω)td(off) – 40 – ns
REVERSE DIODE
Diode Forward On–Voltage
(ID = 0.34 Adc, VGS = 0 Vdc) VSD – – 1.3 V
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
LBSS123LT1
LESHAN RADIO COMPANY, LTD.
LBSS123LT1–3/4
TYPICAL ELECTRICAL CHARACTERISTICS
ID, DRAIN CURRENT (AMPS)
rDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
VGS(th), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPS)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VDS, DRAN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
0.8
0.6
0.4
0.2
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-ā60 -ā20 +ā20 +ā60 +ā100 +ā140 -ā60 -ā20 +ā20 +ā60 +ā100 +ā140
T, TEMPERATURE (°C)
Figure 3. Temperature versus Static
Drain–Source On–Resistance
T, TEMPERATURE (°C)
Figure 4. Temperature versus Gate
Threshold Voltage
TA = 25°C
VGS = 10 V
9 V
8 V
7 V
6 V
4 V
3 V
5 V
VDS = 10 V -ā55°C25°C
125°C
VGS = 10 V
ID = 200 mA
VDS = VGS
ID = 1.0 mA
LBSS123LT1
LESHAN RADIO COMPANY, LTD.
LBSS123LT1–4/4
LBSS123LT1
DJ
K
L
A
C
BS
H
GV
12
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
DIM
MIN MAX MIN MAX
A0.1102 0.1197 2.80 3.04
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0140 0.0285 0.35 0.69
L0.0350 0.0401 0.89 1.02
S0.0830 0.1039 2.10 2.64
V0.0177 0.0236 0.45 0.60
PIN 1. Gate
2. Source
3. Drain
0.031
0.8
SOT-23
3
