CE LL4151
CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the DO-35 case with the type
designation 1N4151
MECHANICAL DATA
. Case: MinMelf glass case(SOD- 80)
. Weight: Approx. 0.05gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol Value Units
Reverse voltage VR50 Volts
Peak reverse voltage VRM 75 Volts
Average rectified current, Half wave rectification with IAV 1501) mA
Resistive load at TA=25 and F 50Hz
Surge forward current at t<1S and TJ=25 IFSM 500 mA
Power dissipation at TA=25 Ptot 5001) mW
Junction temperature TJ175
Storage temperature range TSTG -65 to + 175
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbols Min. Typ. Max.Units
Forward voltage VF1Volts
Leakage current at VR=50V IR50 nA
at VR=20V, TJ=150 IR50 A
Junction capacitance at VR=VF=0V CJ 75 2 pF
Reverse breakdown voltage tested with 5 A V(BR)R V
Reverse recovery time from IF=10mA to IR=1mA, trr 4 ns
from IF=10mA to IR=1mA VR=6V, RL=100 trr 2 ns
Thermal resistance junction to ambient R JA 3501) K/W
Rectification efficience at f=100MHz,VRF=2V 0.45
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 3
CE LL4151
CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE
RATINGS AND CHATACTERISTIC CURVES LL4151
FIG.2-DYNAMIC FORWARD RESISTANCE
FLG.1-FORWARD CHARACTERISTICS VERSUS FORWARD CURRENT
FIG.3-ADMISSIBLE POWER DISSIPATION FIG.4-RELATIVE CAPACITANCE VERSUS
VERSUS AMBIENT TEMPERATURE VOLTAGE
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 2 of 3
