BC847BS
DUAL NPN SMALL SIGNAL SURF ACE MOUNT TRANSISTOR
Features
• Ideally Suited for Automated Insertion
• For Switching and AF Amplifier Applications
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Terminal Connections: See Diagram
• Marking Information: K1F, See Page 2
• Ordering & Date Code Information: See Page 2
• Weight: 0.006 grams
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J — 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α 0° 8°
All Dimens mm ions in
A
M
JL
D
BC
H
K
F
C
2
B
1
E
1
E
2
B
2
C
1
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Peak Base Current IBM 200 mA
Power Dissipation (Note 1) Pd 200 mW
Thermal Resistance, Junction to Ambient (Note 1) RθJA 500 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
DC Current Gain (Note 3) hFE 200 — 450 — VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) — —
— 100
400 mV IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage (Note 3) VBE(SAT) — 755 — mV IC = 10mA, IB = 0.5mA
Base-Emitter Voltage (Note 3) VBE 580 665 700 mV VCE = 5.0V, IC = 2.0mA
Collector Cutoff Current (Note 3) ICBO
ICBO — —
— 15
5.0 nA
µA VCB = 30V, IE = 0
VCB = 30V, Tj = 125°C
Emitter Cutoff Current (Note 3) IEBO — — 100 nA VEB = 5.0V, IC = 0
Gain Bandwidth Product fT 100 — — MHz VCE = 5.0V, IC = 10mA,
f = 100MHz
Collector-Base Capacitance CCBO — 2.0 3.0 pF VCB = 10V, f = 1.0MHz
Emitter-Base Capacitance CEBO — 11 — pF VEB = 0.5V, f = 1.0MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found
on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Short duration pulse test used to minimize self-heating effect.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured pri o r to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30222 Rev. 12 - 2
1 of 3
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BC847BS
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