Type IPD50P04P4-13
OptiMOS®-P2 Power-Transistor
Package
Marking
Features
P-channel - Normal Level - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (RoHS compliant)
100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current1) IDTC=25°C,
VGS=-10V -50 A
TC=100°C,
VGS=-10V2) -45
Pulsed drain current2) ID,pulse TC=25°C -20
Avalanche energy, single pulse2) EAS ID=-25A 18 mJ
Avalanche current, single pulse IAS --50 A
Gate source voltage VGS - ±20 V
Power dissipation Ptot TC=25 °C 58 W
Operating and storage temperature Tj,Tstg - -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
VDS -40
V
RDS(on) 12.6 mW
ID-50 A
Product Summary
PG-TO252-3-313
Type Package Marking
IPD50P04P4-13 PG-TO252-3-313 4P0413
Rev. 1.0 page 1 2011-03-14
IPD50P04P4-13
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics2)
Thermal resistance, junction - case RthJC - - - 2.6 K/W
SMD version, device on PCB RthJA minimal footprint - - 62
6 cm2cooling area3) - - 40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID= -1mA -40 - - V
Gate threshold voltage VGS(th) VDS=VGS,ID=-85µA -2.0 -3.0 -4.0
Zero gate voltage drain current IDSS VDS=-32V, VGS=0V,
Tj=25°C - -0.05 -1 µA
VDS=-32V, VGS=0V,
Tj=125°C2) - -20 -200
Gate-source leakage current IGSS VGS=-20V, VDS=0V - - -100 nA
Drain-source on-state resistance RDS(on) VGS=-10V, ID=-50A - 9.2 12.6 mW
Values
Rev. 1.0 page 2 2011-03-14
IPD50P04P4-13
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
2)
Input capacitance Ciss - 2820 3670 pF
Output capacitance Coss - 1000 1500
Reverse transfer capacitance Crss - 30 60
Turn-on delay time td(on) - 17 - ns
Rise time tr- 10 -
Turn-off delay time td(off) - 22 -
Fall time tf- 28 -
Gate Charge Characteristics
2)
Gate to source charge Qgs - 14 19 nC
Gate to drain charge Qgd - 7 14
Gate charge total Qg- 39 51
Gate plateau voltage Vplateau - 5.4 - V
Reverse Diode
Diode continous forward current2) IS- - -50 A
Diode pulse current2) IS,pulse - - -200
Diode forward voltage VSD VGS=0V, IF=-50A,
Tj=25°C - -1 -1.3 V
Reverse recovery time2) trr - 39 - ns
Reverse recovery charge2) Qrr - 32 - nC
VR=-20V, IF=-50A,
diF/dt=-100A/µs
2) Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1) Current is limited by bondwire; with an RthJC = 2.6K/W the chip is able to carry -55A at 25°C.
TC=25°C
Values
VGS=0V, VDS=-25V,
f=1MHz
VDD=-20V,
VGS=-10V, ID=-50A,
RG=3.5W
VDD=-32V, ID=-50A,
VGS=0 to -10V
Rev. 1.0 page 3 2011-03-14
IPD50P04P4-13
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS -6V ID= f(TC); VGS = -10V
3 Safe operating area 4 Max. transient thermal impedance
ID= f(VDS); TC= 25 °C; D= 0 ZthJC = f(tp)
parameter: tpparameter: D=tp/T
10 µs
100 µs
1 ms
1
10
100
0.1 1 10 100
-VDS [V]
-ID[A]
single pulse
0.01
0.05
0.1
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
101
100
10-1
10-2
10-3
tp[s]
ZthJC [K/W]
0
20
40
60
80
0 50 100 150 200
TC[°C]
Ptot [W]
0
20
40
60
0 50 100 150 200
TC[°C]
-ID[A]
Rev. 1.0 page 4 2011-03-14
IPD50P04P4-13
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID= f(VDS); Tj= 25 °C RDS(on) = (ID); Tj= 25 °C
parameter: -VGS parameter: -VGS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
ID= f(VGS); VDS = -6V RDS(on) = f(Tj); ID= -50 A; VGS = -10 V
parameter: Tj
10
11
12
13
14
15
16
17
18
19
20
-60 -20 20 60 100 140 180
Tj[°C]
RDS(on) [mW]
-55 °C
25 °C
175 °C
0
70
140
210
280
2 3 4 5 6 7 8
-VGS [V]
-ID[A]
5V
6V
7V
8V
10V
0
70
140
210
280
0 1 2 3 4 5 6
-VDS [V]
-ID[A]
5V
6V
7V
8V
10V
5
10
15
20
25
30
35
40
0 25 50
-ID[A]
RDS(on) [mW]
6V5V
Rev. 1.0 page 5 2011-03-14
IPD50P04P4-13
9 Typ. gate threshold voltage 10 Typ. capacitances
VGS(th) = f(Tj); VGS =VDS C= f(VDS); VGS = 0 V; f= 1 MHz
parameter: -ID
11 Typical forward diode characteristicis 12 Drain-source breakdown voltage
IF = f(VSD)VBR(DSS) = f(Tj); ID= -1 mA
parameter: Tj
25 °C
175 °C
100
101
102
103
0 0.4 0.8 1.2 1.6
-VSD [V]
-IF[A]
Ciss
Coss
Crss
105
104
103
102
101
0 5 10 15 20 25 30
-VDS [V]
C[pF]
85µA
850µA
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj[°C]
-VGS(th) [V]
35
36
37
38
39
40
41
42
43
44
45
-60 -20 20 60 100 140 180
Tj[°C]
-VBR(DSS) [V]
Rev. 1.0 page 6 2011-03-14
IPD50P04P4-13
13 Typ. gate charge 14 Gate charge waveforms
VGS = f(Qgate); ID= -50 A pulsed
parameter: VDD
VGS
Qgate
Qgs Qgd
Qg
VGS
Qgate
Qgs Qgd
Qg
-8V -32V
0
2
4
6
8
10
12
0 10 20 30 40 50 60
Qgate [nC]
-VGS [V]
Rev. 1.0 page 7 2011-03-14
IPD50P04P4-13
Published by
81726 Munich, Germany
©
Infineon Technologies AG 2011
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (
www.infineon.com
).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0 page 8 2011-03-14
IPD50P04P4-13
Revision History
Version
0.1
0.2
1.0 Final Data Sheet
Date
29.01.2010
10.12.2010
14.03.2011
Changes
Initial Target Data Sheet
Preliminary Data Sheet
Rev. 1.0 page 9 2011-03-14
Mouser Electronics
Authorized Distributor
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IPD50P04P4-13