NOTES : 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Case.
3. 300us Pulse Width, 2% Duty Cycle.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
I
R
@T
C
=
95 C
SBL1630PT thru 1660PT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage
at 8A DC (
Note 3)
16
175
0.55
T
J
Operating Temperature Range
-55 to +125
C
T
STG
Storage Temperature Range
-55 to +150
C
Typical Thermal Resistance (Note 2)
R
0JC
3.5
C/W
C
J
Typical Junction Capacitance
per element (Note1)
500
pF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=100 C
@TJ
=25 C 0.5
50
mA
V
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-3P molded plastic
Polarity : As marked on the body
Weight : 0.2 ounces, 5.6 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
SBL
1640PT
40
28
40
SBL
1630PT
30
21
30
SBL
1635PT
35
24.5
35
SBL
1660PT
60
42
60
SBL
1650PT
50
35
50
SBL
1645PT
45
31.5
45
0.70
TO-3P
PIN 1
PIN 3
PIN 2
CASE
E
L
Q
P
N
M
F
C
B
A
O
K
J
I
H
G
D
L
PIN
123
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
- 30
to
60
Volts
FORWARD CURRENT
- 16
Amperes
All Dimensions in millimeter
DIM.
A
C
D
E
F
G
B
M
L
K
J
I
H
O
P
N
Q
TO-3P
MIN. MAX.
15.75 16.25
21.7521.25
19.60 20.10
4.38 3.78
1.88 2.08
4.87 5.13
1.90 2.16
1.221.12
2.90 3.20
5.20 5.70
2.10 2.40
0.76
0.51
2.93 3.22
1.93 2.18
20 TYP
4.4TYP.
10 TYP
SEMICONDUCTOR
LITE-ON
REV. 4, Aug-2007, KTHD01
RATING AND CHARACTERISTIC CURVES
SBL1630PT thru SBL1660PT
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE
CURRENT,
AMPERES
15 10 50 100
220
25
50
75
100
125
150
175
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
25
75 100 125 150
4
0
50
16
175
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0
0.01
1.0
10
1000
100
60 80 100
T
J
= 100 C
0.1
T
J
= 25 C
8.3ms Single Half-Sine-Wave
12
0
8
RESISTIVE OR INDUCTIVE LOAD
T
J
= 75 C
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.2 0.3 0.7 0.8
1.0
10
100
0.4 0.5 0.6
0.1
1.0
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1
1.0
10
100
0.1
PULSE WIDTH 300us
2% Duty cycle
T
J
= 25 C
SBL1630PT ~ SBL1645PT
SBL1650PT ~ SBL1660PT
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAGE , VOLTS
10
1100
1000
100
10
0.1
CASE TEMPERATURE , C
4
T
J
= 25 C, f= 1MHz
