Industrial & Multimarket
Data Sheet
1.4, 2011-03-01
Preliminary
OptiMOS™
BSF077N06NT3 G
n-Channel Power MOSFET
OptiMOS™ Power-MOSFET
BSF077N06NT3 G
Preliminary Data Sheet 1 1.4, 2011-03-01
1 Description
OptiMOS™60V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate- and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™ 60V
the best choice for the demanding requirements of switched mode power supplies
in Servers, Datacom and Telecom applications but also for motor drives. With
almost no parasitic package inductances, the CanPAK allows best controllability
of the gate in highly dynamic switching enviroments. This package in addition
features best cooling capability through top-side cooling of the metal can. Hence,
this packaging technology combined with the OptiMOS silicon enables highest
efficiency levels while having mininal space requirements at the same time
Features
• Optimized technology for DC/DC converters
• 100% avalanche tested
• Excellent gate charge x RDS(on) product (FOM)
• Qualified according to JEDEC1) for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Double.sided cooling
• Compatible with DirectFET® package ST footprint and outline
• Low profile (<0.7mm)
• Low parasitic inductance
Applications
• DC/DC conver te rs
• Synchronous rectification
• Power distribution
• Motor drive applications
1) J-STD20 and JESD22
Table 1 Key Performance Parameters
Parameter Value Unit Related Links
VDS 60 V IFX OptiMOS webpage
RDS(on),max 7.7 mΩIFX OptiMOS product brief
ID56 A IFX OptiMOS spice models
QOSS 28 nC IFX Design tools
Qg.typ 34
Type Package Marking
BSF077N06NT3 G MG-WDSON-2 0206
OptiMOS™ Power-MOSFET
BSF077N06NT3 G
Preliminary Data Sheet 2 1.4, 2011-03-01
2Maximum ratings
at Tj = 25 °C, unless otherwise specified.
3 Thermal characteristics
Table 2 Maximum ratings
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current ID--56 AVGS=10 V, TC=25 °C
36 VGS=10 V, TC=100 ° C
13 VGS=10 V, TA=25 °C,
RthJA=58 K/W1))
1) DirectFET ® is a trademark of International Rectifier Corporation. BSF077N06NT3 G uses DirectFET ® technology
licensed from International Rectifier Corporation.
Pulsed drain current2)
2) See figure 3 for more detailed information
ID,pulse --224 TC=25 °C
Avalanche energy, single pulse EAS --150 mJID=30 A,RGS=25 Ω
Gate source voltage VGS -20 - 20 V
Power dissipation Ptot --38 WTC=25 °C
2.2 TA=25 °C, RthJA=58 K/W3)
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection.
PCB is vertical in still air.
Operating and storage temperature Tj,Tstg -40 - 150 °C
IEC climatic category; DIN IEC 68-1 55 150 56 Ncm
Table 3 Thermal characteristics
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - 1.0 - °K/W bottom
3.3 - top
Device on PCB RthJA --58 6 cm
2 cooling area1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection.
PCB is vertical in still air
OptiMOS™ Power-MOSFET
BSF077N06NT3 G
Electrical characteristics
Preliminary Data Sheet 3 1.4, 2011-03-01
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 4 Static characteristics
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 60 15 - V VGS=0 V, ID=1 mA
Gate threshold voltage VGS(th) 234 VDS=VGS, ID=33 µA
Zero gate voltage drain current IDSS -0.110µAVDS=30 V, VGS=0 V,
Tj=25 °C
- 10 100 VDS=60 V, VGS=0 V,
Tj=125 °C
Gate-source leakage current IGSS - 10 100 nA VGS=20 V, VDS=0 V
Drain-source on-state resistance RDS(on) -6.67.7mΩVGS=10 V, ID=30A
Gate resistance RG-0.5-Ω
Transconductance gfs 23 46 S |VDS|>2|ID|RDS(on)max,
ID=30 A
Table 5 Dyn ami c ch a r acte ris tic s
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Input capacitance Ciss - 2800 3700 pF VGS=0 V, VDS=30V,
f=1 MHz
Output capacitance Coss - 800 1060
Reverse transfer capacitance Crss -22-
Turn-on dela y time td(on) -12-nsVDD=30V, VGS=10 V,
ID=30 A, RG=1.6 Ω
Rise time tr-4-
Turn-off delay time td(off) -18-
Fall time tf-3-
OptiMOS™ Power-MOSFET
BSF077N06NT3 G
Electrical characteristics
Preliminary Data Sheet 4 1.4, 2011-03-01
Table 6 Gate charge characteristics1)
1) See figure 16 for gate charge parameter definition
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Gate to sour ce charge Qgs -15-nCVDD=30 V,
ID=30 A,
VGS=0 to 10 V
Gate to drain charge Qgd -3-
Switching charge Qsw -15-
Gate charge total Qg-3446
Gate plateau voltage Vplateau -5.2-V
Output charge Qoss 28 37 VDD=30 V, VGS=0 V
Table 7 Reverse diode characteristics
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Diode continuous forward current Is30 A TC=25 °C
Diode pulse current IS,pulse 120
Diode forward voltage VSD -0.91.2VVGS=0 V, IF=30 A,
Tj=25 °C
Reverse reco very charge Qrr -56-nCVR=30V, IF=Is,
diF/dt=400 A/µs
Reverse recovery time trr -41-ns
OptiMOS™ Power-MOSFET
BSF077N06NT3 G
Electrical characteristics diagrams
Preliminary Data Sheet 5 1.4, 2011-03-01
5 Electrical characteristics diagrams
Table 8
1 Power dissipation 2 Drain current
Ptot = f(TC) ID=f(TC); parameter:VGS
Table 9
3 Safe operating area TC=25 °C 4 Max. transient thermal impedance
ID=f(VDS); Tj=25 °C; D=0; parameter: Tp Z(thJC)=f(tp); parameter: D=tp/T
OptiMOS™ Power-MOSFET
BSF077N06NT3 G
Electrical characteristics diagrams
Preliminary Data Sheet 6 1.4, 2011-03-01
Table 10
5 Typ. output characteristics TC=25 °C 6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=25 °C; parameter: VGS RDS(on)=f(ID); Tj=25 °C; parameter: VGS
Table 11
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
OptiMOS™ Power-MOSFET
BSF077N06NT3 G
Electrical characteristics diagrams
Preliminary Data Sheet 7 1.4, 2011-03-01
Table 12
9 Drain-sour ce on-s ta te resistanc e 10 Typ. gate th re s hold voltage
RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS
Table 13
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD); parameter: Tj
OptiMOS™ Power-MOSFET
BSF077N06NT3 G
Electrical characteristics diagrams
Preliminary Data Sheet 8 1.4, 2011-03-01
Table 14
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 Ω; parameter: Tj(start) VGS=f(Qgate); ID=30 A pulsed; parameter: VDD
Table 15
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
OptiMOS™ Power-MOSFET
BSF077N06NT3 G
Package outlines
Preliminary Data Sheet 9 1.4, 2011-03-01
6 Package outlines
Figure 1 Outlines MG-WDSON-2, dimensions in mm/inches
OptiMOS™ Power-MOSFET
BSF077N06NT3 G
Package outlines
Preliminary Data Sheet 10 1.4, 2011-03-01
7 Package outlines
Figure 2 Outlines MG-WDSON-2, dimensions in mm/inches
OptiMOS™ Power-MOSFET
BSF077N06NT3 G
Package outlines
Preliminary Data Sheet 11 1.4, 2011-03-01
8 Package outlines
9 Marking layout
OptiMOS™ Power-MOSFET
BSF077N06NT3 G
Revision History
Preliminary Data Sheet 12 1.4, 2011-03-01
9 Revision History
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Edition 2011-03-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
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Revision History: 2011-03-01, 1.4
Previous Revision:
Revision Subjects (major changes since last revision)
0.1 Release of target data sheet
1.0 Release Preliminary data sheet
1.3 DirectFET Disclaimer expired
1.4 Insert Marking layout
