© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 5 1Publication Order Number:
2N5550/D
2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
•These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter V oltage 2N5550
2N5551
VCEO 140
160
Vdc
Collector − Base Voltage 2N5550
2N5551
VCBO 160
180
Vdc
Emitter − Base Voltage VEBO 6.0 Vdc
Collector Current − Continuous IC600 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 W
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
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COLLECTOR
3
2
BASE
1
EMITTER
MARKING DIAGRAM
2N
555x
AYWW G
G
x = 0 or 1
A = Assembly Location
Y = Year
WW = W ork Week
G= Pb−Free Package
(Note: Microdot may be in either location)
12312
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 1
2N5550, 2N5551
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0 ) 2N5550
2N5551
V(BR)CEO 140
160 −
−Vdc
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0 ) 2N5550
2N5551
V(BR)CBO 160
180 −
−Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0) 2N5550
(VCB = 120 Vdc, IE = 0) 2N5551
(VCB = 100 Vdc, IE = 0, TA = 100°C) 2N5550
(VCB = 120 Vdc, IE = 0, TA = 100°C) 2N5551
ICBO −
−
−
−
100
50
100
50
nAdc
mAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0) IEBO − 50 nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5550
2N5551
(IC = 10 mAdc, VCE = 5.0 Vdc) 2N5550
2N5551
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N5550
2N5551
hFE 60
80
60
80
20
30
−
−
250
250
−
−
−
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) Both Types
(IC = 50 mAdc, IB = 5.0 mAdc) 2N5550
2N5551
VCE(sat) −
−
−
0.15
0.25
0.20
Vdc
Base−Emitter Saturation V oltage
(IC = 10 mAdc, IB = 1.0 mAdc) Both Types
(IC = 50 mAdc, IB = 5.0 mAdc) 2N5550
2N5551
VBE(sat) −
−
−
1.0
1.2
1.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) fT100 300 MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 6.0 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N5550
2N5551
Cibo −
−30
20
pF
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 50 200 −
Noise Figure
(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) 2N5550
2N5551
NF −
−10
8.0
dB
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2N5550, 2N5551
http://onsemi.com
3
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
500
h , DC CURRENT GAIN
FE
TJ = 125°C
−55°C
25°C
5.0
10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
200
30
20
300
100
50
7.0
VCE = 1.0 V
VCE = 5.0 V
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
IC = 1.0 mA
0
0.3
0.005 0.01 0.2 0.5 1.0 2.0 20 50
0.8
0.5
0.4
0.9
0.7
0.6
0.2
0.02 0.05 0.1 10
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.1
10 mA 30 mA 100 mA
5.0
Figure 3. Collector Cut−Off Region
IC, COLLECTOR CURRENT (mA)
1.0
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50 100
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
0.1 0.2 0.5
Figure 4. “On” Voltages
VBE, BASE−EMITTER VOLTAGE (VOLTS)
101
10−5
0.4 0.3 0.1
0.8
0.6
0.4
0.2
0
100
10−1
10−2
10−3
10−4
0.2 0 0.1 0.2 0.40.3 0.60.5
VCE = 30 V
TJ = 125°C
75°C
25°C
IC = ICES
, COLLECTOR CURRENT (A)μIC
3.0 30
REVERSE FORWARD
0.3
2N5550, 2N5551
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4
IC, COLLECTOR CURRENT (mA)
2.5
qVC for VCE(sat)
qVB for VBE(sat)
Figure 5. Temperature Coefficients
TJ = −55°C to +135°C
V, TEMPERATURE COEFFICIENT (mV/ C)°θ
2.0
1.5
1.0
0.5
0
−0.5
−1.0
−1.5
−2.0
−2.5
1.0 2.0 5.0 10 20 50 1000.1 0.2 0.5 3.0 300.3
C, CAPACITANCE (pF)
Figure 6. Switching Time Test Circuit
VR, REVERSE VOLTAGE (VOLTS)
100
1.0
0.2 0.5 1.0 2.0 5.0 10 20
Cibo
70
50
30
20
10
7.0
5.0
3.0
2.0
0.3 0.7 3.0 7.0
Cobo
Figure 7. Capacitances
10.2 V
Vin
10 ms
INPUT PULSE
VBB
−8.8 V
100
RB
5.1 k
0.25 mF
Vin 100 1N914
Vout
RC
VCC
30 V
3.0 k
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
Values Shown are for IC @ 10 mA
TJ = 25°C
Figure 8. Turn−On Time
IC, COLLECTOR CURRENT (mA)
1000
Figure 9. Turn−Off Time
IC, COLLECTOR CURRENT (mA)
0.3 1.0 10 20 30 50
5000
0.50.2
t, TIME (ns)
t, TIME (ns)
10
20
30
50
100
200
300
500
2.0 100 200
IC/IB = 10
TJ = 25°C
tr @ VCC = 120 V
50
100
200
300
500
3.0 5.0
tr @ VCC = 30 V
td @ VEB(off) = 1.0 V
VCC = 120 V
3000
2000
1000
0.3 1.0 10 20 30 500.50.2 2.0 100 2003.0 5.0
IC/IB = 10
TJ = 25°C
tf @ VCC = 120 V
tf @ VCC = 30 V
ts @ VCC = 120 V
2N5550, 2N5551
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5
ORDERING INFORMATION
Device Package Shipping†
2N5550G TO−92
(Pb−Free) 5000 Units / Bulk
2N5550RLRPG TO−92
(Pb−Free) 2000 / Tape & Ammo Box
2N5551G TO−92
(Pb−Free) 5000 Units / Bulk
2N5551RL1G TO−92
(Pb−Free) 2000 / Tape & Reel
2N5551RLRAG TO−92
(Pb−Free)
2N5551RLRPG TO−92
(Pb−Free) 2000 / Tape & Ammo Box
2N55551ZL1G TO−92
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
2N5550, 2N5551
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6
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.04 2.66
P−−− 0.100 −−− 2.54
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION:
MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN
P AND BEYOND DIMENSION K MINIMUM.
RA
P
J
B
K
G
SECTION X−X
C
V
D
N
XX
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A4.45 5.20
B4.32 5.33
C3.18 4.19
D0.40 0.54
G2.40 2.80
J0.39 0.50
K12.70 −−−
N2.04 2.66
P1.50 4.00
R2.93 −−−
V3.43 −−−
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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Phone: 81−3−5773−3850
2N5550/D
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