IRFZ48NS
IRFZ48NL
HEXFET® Power MOSFET
lAdvanced Process Technology
lSurface Mount (IRFZ48NS)
lLow-profile through-hole (IRFZ48NL)
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-resistance
in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRFZ48NL) is available for low-
profile applications.
Description
VDSS = 55V
RDS(on) = 0.014
ID = 64A
2
D P a k
TO-262
S
D
G
03/12/01
Parameter Typ. Max. Units
RqJC Junction-to-Case ––– 1.15
RqJA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
Thermal Resistance
°C/W
Absolute Maximum Ratings
www.irf.com 1
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 64
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 45 A
IDM Pulsed Drain Current 210
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 130 W
Linear Derating Factor 0.83 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current32 A
EAR Repetitive Avalanche Energy13 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
PD - 9.1408B
IRFZ48NS/IRFZ48NL
2www.irf.com
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– VV
GS = 0V, ID = 250µA
V(BR)DSS/TJBreakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 14 mVGS = 10V, ID = 32A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 24 ––– ––– SV
DS = 25V, ID = 32A
––– ––– 25 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– ––– 81 ID = 32A
Qgs Gate-to-Source Charge ––– ––– 19 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 30 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 ––– VDD = 28V
trRise Time ––– 78 ––– ID = 32A
td(off) Turn-Off Delay Time ––– 34 ––– RG = 0.85
tfFall Time ––– 50 ––– VGS = 10V, See Fig. 10
n H Between lead,
and center of die contact
Ciss Input Capacitance ––– 1970 ––– VGS = 0V
Coss Output Capacitance ––– 470 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 120 ––– pF ƒ = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy––– 700190mJ IAS = 32A, L = 0.37mH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LSInternal Source Inductance ––– 7.5 –––
IGSS
ns
IDSS Drain-to-Source Leakage Current
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 32A, VGS = 0V
trr Reverse Recovery Time ––– 68 100 ns TJ = 25°C, I F = 32A
Qrr Reverse Recovery Charge ––– 220 330 n C di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
64
210 A
Starting TJ = 25°C, L = 0.37mH
RG = 25, IAS = 32A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD 32A, di/dt 220A/µs, VDD V(BR)DSS,
TJ 175°C
Pulse width 400µs; duty cycle 2%.
This is the destructive value not limited to the thermal limit.
This is the thermal limited value.
Notes:
IRFZ48NS/IRFZ48NL
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
46810 12
V = 25V
20
µ
s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
64A
IRFZ48NS/IRFZ48NL
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
500
1000
1500
2000
2500
3000
3500
V , Drain-to-Source Volta
g
e (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
g
s
g
d , ds
rss
g
d
oss ds
g
d
Ciss
Coss
Crss
020 40 60 80
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
32A
V = 11V
DS
V = 27V
DS
V = 44V
DS
0.1
1
10
100
1000
0.2 0.7 1.2 1.7 2.2
V ,Source-to-Drain Volta
g
e (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
1 10 100
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
IRFZ48NS/IRFZ48NL
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
VDS
90%
10%
VGS t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width 1 µs
Duty Factor 0.1 %
RD
VGS
RGD.U.T.
VGS
+
-
VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRFZ48NS/IRFZ48NL
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50K
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
RG
IAS
0.01
t
p
D.U.T
L
VDS
+
-VDD
DRIVER
15V
20V
25 50 75 100 125 150 175
0
60
120
180
240
300
360
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
13A
23A
32A
IRFZ48NS/IRFZ48NL
www.irf.com 7
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
RGVDD
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For N-channel HEXFET® power MOSFETs
IRFZ48NS/IRFZ48NL
8www.irf.com
D2Pak Package Outline
D2Pak
Part Marking Information
10.16 (.400)
R EF.
6.47 (.2 55 )
6.18 (.2 43 )
2.61 (.1 03)
2.32 (.0 91)
8.89 (.350)
REF .
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
5 .28 (.208)
4 .78 (.188)
4.69 (.1 85)
4.20 (.1 65)
10.54 (.415)
10.29 (.405)
- A -
2
1 3 15 .4 9 (.6 10)
14 .7 3 (.5 80)
3X 0.93 (.037)
0.69 (.027)
5 .08 (.200)
3X 1.40 (.0 55)
1.14 (.0 45)
1.78 (.070)
1.27 (.050)
1.40 (.055)
MA X.
NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLE RANCING PER A NSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
0.55 (.022)
0.46 (.018)
0.25 ( .0 10 ) M B A M MINIMUM RECOMMENDED F OOTP RINT
11.43 (.450)
8.89 (.3 50)
17 .78 (.700)
3.81 (.150)
2.08 (.082)
2 X
LEAD ASSIGNMENTS
1 - GAT E
2 - DRA IN
3 - SOUR CE
2.54 (.100)
2X
PART NUMBER
INTERNATIONAL
RE CTIFIE R
LO GO DATE CODE
(YYW W )
YY = YEAR
WW = WEEK
A S SEMBLY
LO T COD E
F530S
9B 1M
9246
A
IRFZ48NS/IRFZ48NL
www.irf.com 9
Package Outline
TO-262 Outline
TO-262
Part Marking Information
IRFZ48NS/IRFZ48NL
10 www.irf.com
Tape & Reel Information
D2Pak
3
4
4
TRR
FEED DIRECTION
1.85
(
.073
)
1.65
(
.065
)
1.60
(
.063
)
1.50
(
.059
)
4.10
(
.161
)
3.90
(
.153
)
TRL
FE ED D IRE CTION
10.90
(
.429
)
10.70
(
.421
)
16.10
(
.634
)
15.90
(
.626
)
1.75
(
.069
)
1.25
(
.049
)
11.60
(
.457
)
11.40
(
.449
)
15.42
(
.609
)
15.22
(
.601
)
4.72
(
.136
)
4.52
(
.178
)
24.30
(
.957
)
23.90
(
.941
)
0.368
(
.0145
)
0.342
(
.0135
)
1.60
(
.063
)
1.50
(
.059
)
13.50
(
.532
)
12.80
(
.504
)
330.00
(
14.173
)
MAX.
27.40
(
1.079
)
23.90
(
.941
)
60.00
(
2.362
)
MIN .
30.40
(
1.197
)
M A X .
26.40
(
1.039
)
24.40
(
.961
)
NOT ES :
1. CO M F O RM S TO E IA -418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIM ENSIO N MEASUR ED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IRs Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/01
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/