AO4402
20V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=4.5V) 20A
R
DS(ON)
(at V
GS
=4.5V) < 5.5mΩ
R
DS(ON)
(at V
GS
=2.5V) < 7mΩ
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
V
GS
I
DM
I
AS
, I
AR
E
AS
, E
AR
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
mJ
2
T
A
=70°C
Junction and Storage Temperature Range -55 to 150 °C
V±12Gate-Source Voltage
16
UnitsParameter Typ Max °C/W
R
θJA
31
59 40
The AO4402 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch
and battery protection applications.
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
20V
Drain-Source Voltage 20
A57
T
A
=25°C
T
A
=70°C
Pulsed Drain Current
C
Continuous Drain
Current A
I
D
20
140
W
3.1
Maximum Junction-to-Lead °C/W
°C/W
Maximum Junction-to-Ambient
A D
16 75
Power Dissipation
B
P
D
24
Maximum Junction-to-Ambient
A
T
A
=25°C
Avalanche Current
C
162Avalanche energy L=0.1mH
C
Thermal Characteristics
G
D
S
SOIC-8
Top View Bottom View
D
D
D
D
S
S
S
Rev 1: Nov 2010 www.aosmd.com Page 1 of 6
AO4402
Symbol Min Typ Max Units
BV
DSS
20 V
V
DS
=20V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage 0.5 1 1.6 V
I
D(ON)
140 A
4.6 5.5
T
J
=125°C 5.8 7
5.5 7 mΩ
g
FS
105 S
V
SD
0.6 1 V
I
S
4 A
C
iss
3080 3860 4630 pF
C
oss
520 740 960 pF
C
rss
350 580 810 pF
R
g
0.6 1.4 2.1 Ω
Q
g
(4.5V) 28 36 43 nC
Q
gs
7 9 11 nC
Q
gd
7 12 17 nC
t
D(on)
7 ns
t
r
8 ns
t
D(off)
70 ns
t
f
18 ns
t
rr
13 17 20 ns
Q
rr
29 36 43 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=10V, R
L
=0.5Ω,
R
GEN
=3Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge V
GS
=10V, V
DS
=10V, I
D
=20A
Gate Source Charge
Gate Drain Charge
mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=2.5V, I
D
=18A
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
µA
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=4.5V, I
D
=20A
Reverse Transfer Capacitance
I
F
=20A, dI/dt=500A/µs
V
GS
=0V, V
DS
=10V, f=1MHz
SWITCHING PARAMETERS
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°C.Maximum avalanche current limited by tester capability.
D. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse ratin g.
Rev 1: Nov 2010 www.aosmd.com Page 2 of 6
AO4402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
20
40
60
80
0.5 1 1.5 2 2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
I
D
(A)
0
2
4
6
8
10
0 5 10 15 20 25 30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
I
S
(A)
0.8
1
1.2
1.4
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
Normalized On-Resistance
3
4
5
6
7
8
9
10
02468
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
25°C
125°C
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
I
D
=20A
25°C
125°C
0
20
40
60
80
100
012345
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
I
D
(A)
Rev 1: Nov 2010 www.aosmd.com Page 3 of 6
AO4402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 20 40 60 80 100
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
1000
2000
3000
4000
5000
6000
7000
0 5 10 15 20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
oss
rss
V
DS
=10V
I
D
=20A
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Power (W)
T
A
=25°C
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
10ms
10.0
100.0
1000.0
1 10 100 1000
Time in avalanche, t
A
(µ
µµ
µs)
Figure 9: Single Pulse Avalanche capability (Note
C)
I
AR
(A) Peak Avalanche Current
Rev 1: Nov 2010 www.aosmd.com Page 4 of 6
AO4402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJA
=75°C/W
Rev 1: Nov 2010 www.aosmd.com Page 5 of 6
AO4402
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
AR
AR
t
rr
Rev 1: Nov 2010 www.aosmd.com Page 6 of 6