N-Channel JFET Switch
2N4391 – 2N4393 / PN4391 – PN4393 / SST4391 – SST4393
FEATURES
••rds(on)<300 Ohm s (2N43 91)
••ID(OFF)<100pA
••Switches ±10VAC Wi th ±15V Sup pl ies (4392, 439 3)
ABSOLUTE M AXIM UM R A T INGS
(TA = 25oC unless o th erw ise noted)
Gate- Sour ce or Gate-Dr ain Voltage . . . . . . . . . . . . . . . . -40 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Stor age Temper at ure R a nge. . . . . . . . . . . . . -65oC t o +200oC
Oper at ing Temper atur e Ra nge . . . . . . . . . . . -55oC to +200 oC
Lead Tem peratu re (So ld er ing, 10se c). . . . . . . . . . . . . +300oC
TO-18 TO-92 SOT-23
Power Dissipat ion 1.8W 360m W 350m W
Derate above 25oC 10mW/oC 3.3mW/oC 2.8mW/oC
Plastic
Storage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC t o +150oC
Oper ating . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +135oC
NOTE: Stresses above those listed un der "Absolute Maximum
Ratings " may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating con ditions for extended per i ods may affect dev ice reliability.
ORDERING INFORMATION
Part Package Temperature Range
2N4391/93 Herm etic TO-18 -55oC to +200oC
PN4391/93 Plastic TO-9 2 -55oC to +135oC
SST4391/93 Plastic SOT-23 -55oC to +135oC
X2N4391/ 93 Sorted Chips in Car rier s -55oC to +200oC
CORPORATION
PIN CONFIGUR ATI O N
D
SG
TO-92
S
TO-18
G,C D
5001
PRO DUCT MARKING (SOT-23)
SST4391 N01
SST4392 N02
SST4393 N03
SOT-23
G
D
S
DS
G
TO-92
ELECTRICA L CHARACTERI STIC S (TA = 2 5oC unle ss other wise sp ecifie d)
SYMBOL PARAMETER 4391 4392 4393 UNITS TEST CONDITIONS
MIN MAX MIN MAX MIN MAX
IGSS Gate Reverse Current -100 -100 -100 pA VGS = -20V, VDS = 0
-200 -200 -200 nA TA = 150oC
BVGSS Gate-Source Breakdown Voltage -40 -40 -40 V IG = -1µA, VDS = 0
ID(off) Drain Cutoff Current 100 100 100 pA VDS = 20 V
VGS = -5V (4393)
VGS = -7V (4392)
200 200 200 nA VGS = -12V (4391)
TA = 150oC
VGS(f) Gate-Source Forward Voltag e 111
VIG = 1mA, VDS = 0
VGS(off) Gate-Source Cutoff Vo ltage -4 -10 -2 -5 -0.5 -3 VDS = 20V, ID = 1nA
IDSS Saturation Drain Current (Note 1) 50 150 25 75 5 30 mA VDS = 20V, VGS = 0
VDS(on) Drain-Source ON Voltage 0.4 0.4 0.4 V VGS = 0 ID = 3mA (4393)
ID = 6mA (4392)
ID = 12 mA (4391)
rDS(on) Static Drain-Source ON
Resistance 30 60 100 ΩVGS = 0, ID = 1mA
rds(on) Drain-Source ON Resistance 30 60 100 VGS = 0, ID = 0 f = 1kHz
Ciss Common-Source Input
Cap acita nce (Note 2) 14 14 14
pF
VDS = 20V, VGS = 0
f = 1 MHz
Crss Common-Source Reverse
Tra nsfer Cap acita nce (Note 2)
3.5
VDS = 0
VGS = -5V
3.5 VGS = -7V
3.5 VGS = -12V
tdTurn-ON Delay T ime (Note 2) 15 15 15
ns
VDD = 1 0V, VGS(on) = 0
ID(on) VGS(off)
4391 12mA -12V
4392 6 -7
4393 3 -5
trRise Time (Note 2) 555
toff Turn-OFF Delay Time (Note 2) 20 35 50
tfFall Time (Note 2) 15 20 30
NOTES: 1. Pulse tes t required, pulse width = 300µs, duty c y cle ≤3%.
2. For design reference only, not 100% tested.
2N4391 – 2N4393 / PN4391 – PN4393
SST4391 – SST4393
CORPORATION
SWITCHING TIMES TEST CI RCUIT
51Ω
51Ω
1 kΩ
PULSE
IN
51Ω
SCOPE
V
IN
1000pF
V
OUT
R
L
D
=9.6
R
LD(ON)
I
V
0010
- 51Ω
DD
