1. Product profile
1.1 General description
Passivated guaranteed commutation triacs in a surface-mounted plastic package,
intended for interfacing with low-power drivers, including microcontrollers.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
BTA201W series E
1 A Three-quadrant triacs high commutation
Rev. 03 — 13 March 2008 Product data sheet
nSuitable for interfacing with low-power
drivers, including microcontrollers
nSOT223 surface mounted
nMotor control nSolenoid drivers
nITSM ≤12.5 A nIGT ≤10 mA (BTA201W-600E)
nIT(RMS) ≤1A nIGT ≤10 mA (BTA201W-800E)
nVDRM ≤600 V (BTA201W-600E) nIGT ≥1 mA (BTA201W-600E)
nVDRM ≤800 V (BTA201W-800E) nIGT ≥1 mA (BTA201W-800E)
Table 1. Pinning
Pin Description Simplified outline Symbol
1 main terminal 1 (T1)
SOT223
2 main terminal 2 (T2)
3 gate (G)
4 main terminal 2 (T2) 132
4
sym051
T1
G
T2
BTA201W_SER_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 13 March 2008 2 of 13
NXP Semiconductors BTA201W series E
1 A Three-quadrant triacs high commutation
3. Ordering information
4. Limiting values
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/µs.
Table 2. Ordering information
Type number Package
Name Description Version
BTA201W-600E SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223
BTA201W-800E
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage BTA201W-600E [1] - 600 V
BTA201W-800E - 800 V
IT(RMS) RMS on-state current full sine wave; Tsp ≤106 °C;
see Figure 4 and 5-1A
ITSM non-repetitive peak on-state current full sine wave; Tj=25°C prior to
surge; see Figure 2 and 3
t = 20 ms - 12.5 A
t = 16.7 ms - 13.7 A
I2tI
2t for fusing tp = 10 ms - 0.78 A2s
dIT/dt rate of rise of on-state current ITM = 1.5 A; IG= 0.2 A;
dIG/dt = 0.2 A/µs- 100 A/µs
IGM peak gate current - 2 A
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.1 W
Tstg storage temperature −40 +150 °C
Tjjunction temperature - 125 °C
BTA201W_SER_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 13 March 2008 3 of 13
NXP Semiconductors BTA201W series E
1 A Three-quadrant triacs high commutation
α= conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
0.0
0.5
1.0
1.5
0 0.2 0.4 0.6 0.8 1 1.2
I
T(RMS)
(A)
P
tot
(W) α = 180°
120°
90°
60°
30°
003aab299
α
α
001aag959
8
4
12
16
ITSM
(A)
0
number of cycles (n)
1 103
102
10
ITSM
t
IT
T
j(init)
= 25 °C max
T
BTA201W_SER_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 13 March 2008 4 of 13
NXP Semiconductors BTA201W series E
1 A Three-quadrant triacs high commutation
tp≤20 ms
(1) dIT/dt limit
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values
f = 50 Hz; Tsp = 106 °C
Fig 4. RMS on-state current as a function of surge
duration; maximum values Fig 5. RMS on-state current as a function of solder
point temperature; maximum values
001aag958
tp (s)
10−510−1
10−2
10−410−3
102
103
ITSM
(A)
10
(1)
ITSM
t
IT
T
j(init)
= 25 °C max
T
001aag963
2
4
6
IT(RMS)
(A)
0
surge duration (s)
10−210110−1Tsp (°C)
−50 150100050
001aag964
IT(RMS)
(A)
0.4
0.8
1.2
0.2
0.6
1.0
0
BTA201W_SER_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 13 March 2008 5 of 13
NXP Semiconductors BTA201W series E
1 A Three-quadrant triacs high commutation
5. Thermal characteristics
[1] Mounted on a printed-circuit board.
Table 4. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistance from
junction to solder point see Figure 6 --15K/W
Rth(j-a) thermal resistance from
junction to ambient minimum footprint; see Figure 14 [1] - 156 - K/W
for pad area; see Figure 15 [1] - 70 - K/W
(1) Unidirectional
(2) Bidirectional
Fig 6. Transient thermal impedance from junction to solder point as a function of pulse width
001aag969
1
10−1
10
102
Zth(j-sp)
(K/W)
10−2
tp (s)
10−511010−1
10−2
10−410−3
(2)
(1)
tp
P
t
BTA201W_SER_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 13 March 2008 6 of 13
NXP Semiconductors BTA201W series E
1 A Three-quadrant triacs high commutation
6. Static characteristics
Table 5. Static characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
BTA201W-600E and BTA201W-800E
IGT gate trigger current VD=12V; I
T= 0.1 A; see Figure 8
T2+ G+ 1 - 10 mA
T2+ G−1 - 10 mA
T2− G−1 - 10 mA
ILlatching current VD=12V; I
G= 0.1 A; see Figure 10
T2+ G+ - - 12 mA
T2+ G−- - 20 mA
T2− G−- - 12 mA
IHholding current VD=12V; I
G= 0.1 A; see Figure 11 - - 12 mA
VTon-state voltage IT= 1.4 A; see Figure 9 - 1.2 1.5 V
VGT gate trigger voltage VD=12V; I
T= 0.1 A; see Figure 7 - 0.7 1.5 V
VD= 400 V; IT= 0.1 A; Tj= 125 °C 0.2 0.3 - V
IDoff-state current VD=V
DRM(max); Tj= 125 °C - 0.1 0.5 mA
BTA201W_SER_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 13 March 2008 7 of 13
NXP Semiconductors BTA201W series E
1 A Three-quadrant triacs high commutation
7. Dynamic characteristics
Table 6. Dynamic characteristics
Symbol Parameter Conditions Min Typ Max Unit
BTA201W-600E and BTA201W-800E
dVD/dt rate of rise of off-state
voltage VDM = 0.67VDRM(max); Tj= 125 °C;
exponential waveform; gate open circuit 600 - - V/µs
dIcom/dt rate of change of
commutating current VDM = 400 V; Tj= 125 °C; IT(RMS) =4A;
gate open circuit
dVcom/dt=20V/µs 2.5 - - A/ms
dVcom/dt=10V/µs 3.5 - - A/ms
tgt gate-controlled turn-on
time ITM = 20 A; VD=V
DRM(max); IG= 0.1 A;
dIG/dt = 5 A/µs-2-µs
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 7. Normalized gate trigger voltage as a function
of junction temperature Fig 8. Normalized gate trigger current as a function
of junction temperature
Tj (°C)
−50 150100050
001aab101
0.8
1.2
1.6
0.4
VGT
VGT(25°C) IGT
IGT(25°C)
Tj (°C)
−50 0 150
100
50
1
2
3
0
003aaa959
(1)
(2)
(3)
(1)
(2)
(3)
BTA201W_SER_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 13 March 2008 8 of 13
NXP Semiconductors BTA201W series E
1 A Three-quadrant triacs high commutation
Vo= 1.02 V; Rs= 358 mΩ
(1) Tj= 125 °C; typical values
(2) Tj= 125 °C; maximum values
(3) Tj=25°C; maximum values
Fig 9. On-state current as a function of on-state
voltage Fig 10. Normalized latching current as a function of
junction temperature
Gate open circuit
Fig 11. Normalized holding current as a function of
junction temperature Fig 12. Critical rate of rise of off-state voltage as a
function of junction temperature; minimum
values
VT (V)
0
0.4
0.8
1.2
1.6
2
00.4 0.8 1.2 1.6 2
(A)
IT
(1)
(2)
(3)
003aaa960
Tj (°C)
−50 150100050
001aab100
1
2
3
0
IL
IL(25°C)
Tj (°C)
−50 150100050
001aab099
1
2
3
0
IH
IH(25°C)
001aag740
103
102
104
dVD/dt
(V/µs)
10
Tj (°C)
0 15050 100
BTA201W_SER_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 13 March 2008 9 of 13
NXP Semiconductors BTA201W series E
1 A Three-quadrant triacs high commutation
8. Package outline
Fig 13. Package outline SOT223
UNIT A1bpcDEe1HELpQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 04-11-10
06-03-16
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
Plastic surface-mounted package with increased heatsink; 4 leads SOT223
BTA201W_SER_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 13 March 2008 10 of 13
NXP Semiconductors BTA201W series E
1 A Three-quadrant triacs high commutation
9. Mounting
9.1 Mounting instructions
9.2 Printed-circuit board
All dimensions are in mm
Fig 14. Minimum footprint SOT223
001aab508
3.8 min
1.5
min
1.5
min
(3×)
2.3
4.6
6.3
1.5
min
All dimensions are in mm
Printed-circuit board: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick)
Fig 15. Printed-circuit board pad area SOT223
001aab509
7
4.6
15
36
9
10
18
4.5
60
50
BTA201W_SER_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 13 March 2008 11 of 13
NXP Semiconductors BTA201W series E
1 A Three-quadrant triacs high commutation
10. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BTA201W_SER_E_3 20080313 Product data sheet - BTA201W_SER_E_2
Modifications: •Section 1.4 “Quick reference data” on page 1: Updated with minimum IGT values added.
•Table 3 “Limiting values” on page 2: I2t condition, tp; symbol update.
•Table 5 “Static characteristics” on page 6: Minimum IG values added.
BTA201W_SER_E_2 20070917 Product data sheet - BTA201W_SER_E_1
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Descriptive titles have been corrected.
•Table 3 “Limiting values” on page 2: dIT/dt uprated
•Table 6 “Dynamic characteristics” on page 7: dVD/dt uprated
•Figure “Critical rate of rise of off-state voltage as a function of junction temperature;
minimum values” on page 8: graph updated
BTA201W_SER_E_1 20060207 Product data sheet - -
BTA201W_SER_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 13 March 2008 12 of 13
NXP Semiconductors BTA201W series E
1 A Three-quadrant triacs high commutation
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BTA201W series E
1 A Three-quadrant triacs high commutation
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 13 March 2008
Document identifier: BTA201W_SER_3
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
6 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
7 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
9.1 Mounting instructions . . . . . . . . . . . . . . . . . . . 10
9.2 Printed-circuit board . . . . . . . . . . . . . . . . . . . . 10
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12 Contact information. . . . . . . . . . . . . . . . . . . . . 12
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
