IRF9230
2www.irf.com
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case — — 1.67
RthJA Junction-to-Ambient — — 30 Soldered to a 2” square copper-clad board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — -6.5
ISM Pulse Source Current (Body Diode) ➀— — -28
VSD Diode Forward Voltage — — -6.0 V Tj = 25°C, IS =-6.5A, VGS = 0V ➃
trr Reverse Recovery Time — — 400 nS Tj = 25°C, IF =-6.5A, di/dt ≤-100A/µs
QRR Reverse Recovery Charge — — 4.0 µc VDD ≤-50V ➃
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -200 — — V VGS = 0V, ID = -1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — -0.20 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.80 VGS =-10V, ID =-4.0A➃
Resistance — — 0.92 VGS =-10V, ID =-6.5A ➃
VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID =-250µA
gfs Forward Transconductance 2.0 — — S ( ) V
DS >-15V, IDS =-4.0A➃
IDSS Zero Gate Voltage Drain Current — — -25 VDS=-160V, V GS=0V
— — -250 VDS =-160V
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — -100 VGS =-20V
IGSS Gate-to-Source Leakage Reverse — — 100 VGS =-20V
QgTotal Gate Charge — — 31 VGS =-10V, ID=-6.5A
Qgs Gate-to-Source Charge — — 7.0 nC VDS =-100V
Qgd Gate-to-Drain (‘Miller’) Charge — — 17
td(on) Turn-On Delay Time — — 50 VDD =-100V, ID =-6.5A,
trRise Time — — 100 RG =7.5Ω
td(off) Turn-Off Delay Time — — 100
tfFall Time — — 80
LS + LDTotal Inductance — 6.1 —
Ciss Input Capacitance — 700 VGS = 0V, VDS =25V
Coss Output Capacitance — 200 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 40 —
nA
Ω
nH
ns
µA
Ω
Measured from the center of
drain pad to center of source
pad