MITSUBISHI IGBT MODULES CM100MX-12A HIGH POWER SWITCHING USE CM100MX-12A IC ................................................................... 100A VCES ............................................................ 600V CIB (3-phase Converter + 3-phase Inverter + Brake) Flatbase Type / Insulated Package / Copper base plate RoHS Directive compliant APPLICATION General purpose Inverters, Servo Amplifiers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 34.52 38.34 55 29 56 28 57 27 58 26 59 25 60 24 61 23 2 3 4 5 6 7 8 TERMINAL t = 0.8 4.3 1.5 30 1 (3.81) 1.15 0.65 81.67 85.48 89.29 93.1 96.91 66.43 70.24 47.38 51.19 54 (7.4) 1.2 15.48 19.28 30.72 34.52 2.5 2.1 12.5 11.66 15.48 23.1 26.9 20.5 17 13 7 3.75 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 SECTION A 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Pin positions with tolerance A 91.2 95 75.96 79.76 60.72 64.52 45.48 49.28 0.8 30.24 34.04 (7.75) 15 18.8 0 (3) 3.5 0.5 0.8 LABEL Tolerance otherwise specified TH1(29) P(52~53) P1(54~55) GuP(49) GvP(44) GwP(39) Division of Dimension NTC 58.4 0 4-5.5 MOUNTING HOLES 39 50 0.5 57.5 62 4.2 28.33 32.14 0 4.06 13.09 16.9 121.7 118.1 110 0.5 99 94.5 0.2 to 6 0.3 to 30 0.5 30 to 120 0.8 over 120 to 400 1.2 to over 3 over 6 over TH2(28) EuP(48) R(1~2) S(5~6) T(9~10) B(24~25) GB(35) GuN(34) EvP(43) EwP(38) U(13~14) V(17~18) GvN(33) W(21~22) Tolerance 3 0.5 GwN(32) N(57~58) N1(60~61) Es(31) * Use both terminals (R/S/T/P/N/P1/B/N1/U/V/W) to the external connection. CIRCUIT DIAGRAM 2FW MITSUBISHI IGBT MODULES CM100MX-12A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICRM Ptot IE (Note.3) IERM(Note.3) (Tj = 25C, unless otherwise specified) Parameter Collector-emitter voltage Gate-emitter voltage Conditions G-E Short C-E Short DC, TC = 75C Collector current Pulse Maximum collector dissipation TC = 25C Emitter current TC = 25C (Free wheeling diode forward current) Pulse (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) Rating 600 20 100 200 400 100 150 Unit Rating 600 20 50 100 280 600 50 100 Unit Rating 800 220 100 Unit V V V A W A BRAKE PART Symbol VCES VGES IC ICRM Ptot VRRM(Note.3) IF (Note.3) IFRM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage Conditions G-E Short C-E Short DC, TC = 97C Collector current Pulse Maximum collector dissipation TC = 25C Repetitive peak reverse voltage TC = 25C Forward current Pulse (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) V A W V A CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Conditions Repetitive peak reverse voltage Recommended AC input voltage (Note. 1) 3-phase full wave rectifying, TC = 125C DC output current The sine half wave 1 cycle peak value, f = 60Hz, Surge forward current non-repetitive Value for one cycle of surge current Current square time 1000 A 4160 A2S Rating -40 ~ +150 -40 ~ +125 2500 0 ~ +100 2.5 ~ 3.5 270 Unit MODULE Symbol Tj Tstg Visol -- -- -- Parameter Junction temperature Storage temperature Isolation voltage Base plate flatness Mounting torque Weight Conditions Terminals to base plate, f = 60Hz, AC 1 min, RMS (Note. 8) On the centerline X, Y Mounting M5 screw (Typical) C V m N*m g +convex -concave - Y + Heat sink side Note. 8: The base plate flatness measurement points are in the following figure. X - + Heat sink side 2FW 2 MITSUBISHI IGBT MODULES CM100MX-12A HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol (Tj = 25C, unless otherwise specified) Parameter Conditions ICES VGE(th) IGES VCE = VCES, G-E Short Collector cut-off current Gate-emitter threshold voltage IC = 10mA, VCE = 10V Gate-emitter leakage current VGE = VGES, C-E Short VCEsat Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) Input capacitance Output capacitance Reverse transfer capacitance Gate charge Turn-on delay time Rise time Turn-off delay time Fall time Reverse recovery time Reverse recovery charge VEC(Note.3) Emitter-collector voltage Rth(j-c)Q Rth(j-c)D rg RG (Note. 6) IC = 100A, VGE = 15V IC = 100A, VGE = 15V VCE = 10V, G-E Short Tj = 25C Tj = 125C Chip (Note. 6) VCC = 300V, IC = 100A, VGE = 15V VCC = 300V, IC = 100A, VGE = 15V, RG = 6.2, Inductive load (IE = 100A) IE = 100A, G-E Short (Note. 6) IE = 100A, G-E Short Thermal resistance per IGBT (Note. 1) (Junction to case) per free wheeling diode Internal gate resistance TC = 25C, per switch External gate resistance Tj = 25C Tj = 125C Chip Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6 Limits Typ. -- 6 -- 1.7 1.9 1.6 -- -- -- 270 -- -- -- -- -- 3.6 2.0 1.95 1.9 -- -- 0 -- Max. 1 7 0.5 2.1 -- -- 13.3 1.4 0.45 -- 100 100 300 600 200 -- 2.8 -- -- 0.31 0.59 -- 62 Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 13 Limits Typ. -- 6 -- 1.7 1.9 1.6 -- -- -- 200 -- 2.0 1.95 1.9 -- -- 0 -- Max. 1 7 0.5 2.1 -- -- 9.3 1.0 0.3 -- 1 2.8 -- -- 0.44 0.85 -- 125 Min. -- -- Limits Typ. -- 1.2 Max. 20 1.6 -- -- 0.24 Unit mA V A V nF nC ns C V K/W BRAKE PART Symbol Parameter Conditions ICES VGE(th) IGES VCE = VCES, G-E Short Collector cut-off current Gate-emitter threshold voltage IC = 5mA, VCE = 10V Gate-emitter leakage current VGE = VGES, C-E Short VCEsat Collector-emitter saturation voltage (Note. 6) IC = 50A, VGE = 15V IC = 50A, VGE = 15V Cies Coes Cres QG IRRM(Note.3) Input capacitance Output capacitance Reverse transfer capacitance Gate charge Repetitive peak reverse current VF(Note.3) Forward voltage Rth(j-c)Q Rth(j-c)D rg RG IF = 50A per IGBT Thermal resistance (Note. 1) per Clamp diode (Junction to case) TC = 25C Internal gate resistance External gate resistance VCE = 10V, G-E Short Tj = 25C Tj = 125C Chip (Note. 6) VCC = 300V, IC = 50A, VGE = 15V VR = VRRM (Note. 6) IF = 50A Tj = 25C Tj = 125C Chip Unit mA V A V nF nC mA V K/W CONVERTER PART Symbol IRRM VF Rth(j-c) Parameter Conditions Repetitive peak reverse current VR = VRRM, Tj = 150C IF = 100A Forward voltage Thermal resistance per Diode (Note. 1) (Junction to case) Unit mA V K/W 2FW 3 MITSUBISHI IGBT MODULES CM100MX-12A HIGH POWER SWITCHING USE NTC THERMISTOR PART Symbol R25 R/R B(25/50) P25 Parameter Conditions TC = 25C TC = 100C, R100 = 493 Approximate by equation TC = 25C Zero power resistance Deviation of resistance B constant Power dissipation (Note. 7) Min. 4.85 -7.3 -- -- Limits Typ. 5.00 -- 3375 -- Max. 5.15 +7.8 -- 10 Min. Limits Typ. Max. -- 0.015 -- Unit k % K mW MODULE Symbol Rth(c-s) Parameter Conditions Contact thermal resistance Thermal grease applied (Case to heat sink) (Note. 1) per 1 module (Note. 2) Unit K/W Note.1: Case temperature (TC), heat sink temperature (Ts) measured point is just under the chips. (Refer to the figure of the chip location.) 2: Typical value is measured by using thermally conductive grease of = 0.9W/(m*K). 3: IE, IERM, VEC, trr, Qrr and Err represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part. 4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. 5: Junction temperature (Tj) should not increase beyond 150C. 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for VCEsat and VEC) 1 7: B(25/50) = In( R25 )/( 1 ) T50 R50 T25 R25: resistance at absolute temperature T25 [K]; T25 = 25 [C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [C]+273.15 = 323.15 [K] Dimensions in mm (tolerance: 1mm) Chip Location (Top view) (121.7) 98.9 102.3 91.7 79.3 84.6 65.5 70.3 51.6 41.2 0 30.8 (110) 0 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 CR CR CR S N T N RN 59 0 1 2 3 4 5 6 CR TP 7 8 48.2 61 25.3 43.2 CR SP 36.8 CR RP 60 Tr Br Th Di Br Tr WN Di WN 30 29 28 27 26 25 24 23 15.6 21.6 (Th) 22.6 (Tr/UP, Tr/VP, Tr/WP) 29.2 (Di/Br) 30.0 (Di/UP, Di/VP, Di/WP) 37.4 44.8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 101.0 58 86.7 91.6 57 78.7 56 Tr Tr Tr UP VP WP Di Di Di VP UP WP Tr Tr VN UN Di Di UN VN 72.4 55 65.4 (50) (62) 54 25.8 26.8 29.8 LABEL SIDE Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), CR**: Converter diode, Th: NTC thermistor 2FW 4 MITSUBISHI IGBT MODULES CM100MX-12A HIGH POWER SWITCHING USE P1 V VGE = 15V P1 U B G-E short IC GuP P1 GuP EuP EuP U G-E short VGE = 15V GuN IC GuN Es VGE = 15V V N1 Es V IC GB N1 Es N1 P side Inverter part Tr N side Inverter part Tr (example of U arm) (example of U arm) G-E short G-E short (GvP-EvP, GwP-EwP, GvN-EV, GwN-EV, GB-Es) (GvP-EvP, GwP-EwP, GvN-Es, GwN-Es, GB-Es) B r Tr G-E short (GuP-EuP, GvP-EvP, GwP-EwP, GuN-Es, GvN-Es, GwN-Es) VCEsat test circuit P1 V P1 G-E short G-E short IE GuP P1 V GuP EuP IF EuP B U U G-E short G-E short GuN GuN EV EV IE G-E short V GB EV N1 N1 N1 N side Inverter part Di P side Inverter part Di (example of U arm) (example of U arm) G-E short G-E short (GvP-EvP, GwP-EwP, GvN-EV, GwN-EV, GB-EV) (GvP-EvP, GwP-EwP, GvN-EV, GwN-EV, GB-EV) B r Di G-E short (GuP-EuP, GvP-EvP, GwP-EwP, GuN-EV, GvN-EV, GwN-EV) VEC/VF test circuit Arm VGE IE IE 90% 0V 0% trr Load -VGE + VCC IC 0A 90% +VGE 0V RG VGE -VGE t VCE Irr IC 10% 0A td(on) tr td(off) Switching time test circuit and waveforms 1/2 Irr Qrr = 1/2 Irr trr tf trr, Qrr test waveform 2FW 5 MITSUBISHI IGBT MODULES CM100MX-12A HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part Tj = 25C 12 13 150 11 100 10 50 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 15 VGE = 20V 9 8 0 1 2 3 4 5 6 7 8 9 10 VGE = 15V 3 2.5 2 1.5 1 0.5 0 Tj = 25C Tj = 125C 0 50 100 150 200 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part 10 103 Tj = 25C 8 6 4 IC = 100A IC = 200A 2 7 5 3 2 102 7 5 3 2 Tj = 25C Tj = 125C 2.5 3 3.5 4 IC = 40A 0 6 8 10 12 14 16 18 101 20 10-1 1.5 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 104 SWITCHING TIME (ns) 7 5 3 2 1 CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part Cies 7 5 3 2 100 0.5 EMITTER-COLLECTOR VOLTAGE VEC (V) 7 5 3 2 101 0 GATE-EMITTER VOLTAGE VGE (V) 102 CAPACITANCE (nF) 3.5 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) COLLECTOR CURRENT IC (A) 200 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) Inverter part Coes Cres 7 5 3 2 *(VKRUW 10-2 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 7 5 3 2 103 7 5 3 2 tf td(off) 102 7 td(on) 5 3 2 101 7 5 3 2 100 1 10 Conditions: VCC = 300V VGE = 15V RG = 6.2 Tj = 125C Inductive load tr 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) 2FW 6 MITSUBISHI IGBT MODULES CM100MX-12A HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 101 7 7 SWITCHING LOSS (mJ/pulse) 103 SWITCHING TIME (ns) 5 td(on) 3 tf 2 td(off) tr 102 7 Conditions: VCC = 300V 3 VGE = 15V IC = 100A 2 Tj = 125C Inductive load 101 0 10 2 3 5 7 101 5 2 3 100 7 3 2 Eon 5 3 2 Eoff 100 7 5 3 2 5 7 102 2 3 5 7 101 2 3 102 trr 7 2 3 5 7 103 Irr 5 2 101 1 10 5 7 102 GATE RESISTANCE RG () 3 5 7 102 2 3 5 7 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) IC = 100A VCC = 200V 15 VCC = 300V 10 5 100 2 EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part GATE-EMITTER VOLTAGE VGE (V) 3 3 Err 0 2 REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part 103 7 Conditions: VCC = 300V 5 VGE = 15V 3 RG = 6.2 Tj = 25C 2 Inductive load Conditions: VCC = 300V VGE = 15V IC, IE = 100A 101 Tj = 125C 7 Inductive load 0 Conditions: VCC = 300V VGE = 15V RG = 6.2 Tj = 125C Inductive load 5 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 7 5 3 2 20 Eon Err COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) lrr (A), trr (ns) SWITCHING LOSS (mJ/pulse) 2 GATE RESISTANCE RG () 102 10-1 0 10 3 10-1 1 10 5 7 102 Eoff 5 200 300 400 GATE CHARGE QG (nC) 7 Single pulse 5 TC = 25C 3 2 10-1 7 5 3 2 10-2 Inverter IGBT part : Per unit base = Rth(j-c) = 0.31K/W Inverter FWDi part : Per unit base = Rth(j-c) = 0.59K/W Converter-Di part : Per unit base = Rth(j-c) = 0.24K/W Brake IGBT part : Per unit base = Rth(j-c) = 0.44K/W Brake Clamp-Di part : Per unit base = Rth(j-c) = 0.85K/W -3 10 10-52 3 5710-42 3 5710-32 3 5710-22 3 5710-12 3 57 100 2 3 57 101 7 5 3 2 TIME (s) 2FW 7 MITSUBISHI IGBT MODULES CM100MX-12A HIGH POWER SWITCHING USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Brake part RECTIFIER DIODE FORWARD CHARACTERISTICS (TYPICAL) Converter part COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) FORWARD CURRENT lF (A) 103 Tj = 25C Tj = 125C 7 5 3 2 102 7 5 3 2 101 0 0.5 1.0 1.5 3.5 VGE = 15V 3 2.5 2 1.5 1 0.5 0 2.0 Tj = 25C Tj = 125C 0 10 20 30 40 50 60 70 80 90 100 COLLECTOR CURRENT IC (A) FORWARD VOLTAGE VF (V) CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) Brake part FORWARD CURRENT IF (A) 102 7 5 3 2 101 7 5 3 2 100 Tj = 25C Tj = 125C 0 0.5 1 1.5 2 2.5 3 3.5 4 FORWARD VOLTAGE VF (V) 2FW 8