© 2004 IXYS All rights reserved 1 - 2
VMM 650-01F
407
IXYS reserves the right to change limits, test conditions and dimensions.
Phaseleg Configuration
Dual Power
HiPerFETTM Module
VDSS = 100 V
ID25 = 680 A
RDS(on) = 1.8 mΩΩ
ΩΩ
Ω
MOSFET T1 + T2
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C to 150°C 100 V
VGS ±20 V
ID25 TC = 25°C ①680 A
ID80 TC = 80°C ①500 A
IF25 (diode) TC = 25°C ①680 A
IF80 (diode) TC = 80°C ①500 A
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon VGS = 10 V; ID = ID80 1.8 2.2 mΩ
VGSth VDS = 20 V; ID = 30 mA 2 4 V
IDSS VDS = 0.8 • VDSS; VGS = 0 V; TVJ = 25°C 1 mA
TVJ = 125°C 1.5 mA
IGSS VGS = ±20 V; VDS = 0 V 1 µA
Qg1440 nC
Qgs 200 nC
Qgd 680 nC
td(on) 150 ns
tr250 ns
td(off) 400 ns
tf200 ns
VF(diode) IF = 650 A; VGS = 0 V 1.2 1.5 V
trr (diode) IF = 650 A; -di/dt = 500 A/µs; VDS = ½ VDSS 300 ns
RthJC 0.08 K/W
RthJS with heat transfer paste 0.12 K/W
① additional current limitation by external leads
Features
• HiPerFET TM technology
– low RDSon
– unclamped inductive switching (UIS)
capability
– dv/dt ruggedness
– fast intrinsic reverse diode
– low gate charge
• thermistor
for internal temperature measurement
• package
– low inductive current path
– screw connection to high current
main terminals
– use of non interchangeable
connectors for auxiliary terminals
possible
– Kelvin source terminals for easy drive
– isolated DCB ceramic base plate
Applications
• converters with high power density for
– main and auxiliary AC drives of
electric vehicles
– 4 quadrant DC drives
– power supplies
VGS= 10 V; VDS = 75 V; ID = ID80
VGS= 10 V; VDS = 0.5 • VDSS;
ID = ID80; RG = 0.47 Ω
Preliminary Data 3
1
2
8
9
11
10
6
7NTC