DSEP2x101-04A V RRM = 400 V I FAV = 2x 100 A t rr = 30 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DSEP2x101-04A Backside: isolated Features / Advantages: Applications: Package: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Housing: SOT-227B (minibloc) rIndustry standard outline rCu base plate internal DCB isolated rIsolation Voltage 3000 V rEpoxy meets UL 94V-0 rRoHS compliant Conditions Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage min. typ. V VR = 400 V 1 mA VR = 400 V TVJ = 150 C 4 mA I F = 100 A TVJ = 25 C 1.54 V 1.95 V TVJ = 150 C I F = 100 A 1.22 V 1.73 V TC = 45C 100 A TVJ = 150C 0.72 V I F = 200 A I FAV average forward current threshold voltage rF slope resistance rectangular d = 0.5 for power loss calculation only R thJC thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved 5 m 0.60 K/W 150 C TC = 25 C 200 W TVJ = 45C 1000 A -40 t = 10 ms (50 Hz), sine I F = 100 A; VR = 200 V t rr Unit 400 I F = 200 A VF0 max. TVJ = 25 C TVJ = 25 C -di F /dt = 600 A/s VR = 200 V; f = 1 MHz TVJ = 25 C 16 A TVJ = 100C 30 A TVJ = 25 C 30 ns TVJ = 100C 85 ns TVJ = 25 C 182 pF Data according to IEC 60747and per diode unless otherwise specified 20110531a DSEP2x101-04A Ratings Symbol Definition Conditions per terminal I RMS RMS current R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 100 0.10 -40 Weight A K/W 150 30 C g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm VISOL isolation voltage t = 1 second 3000 t = 1 minute d Spp/App creepage | striking distance on surface | through air terminal to terminal d Spb/Apb creepage | striking distance on surface | through air terminal to backside V 2500 V 10.5 3.2 mm 8.6 6.8 mm Product Marking abcde Logo YYWW Z Part No. XXXXXX Assembly Code DateCode Assembly Line Ordering Standard Part Name DSEP2x101-04A Similar Part DPF240X400NA IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Marking on Product DSEP2x101-04A Package SOT-227B (minibloc) Delivering Mode Tube Base Qty Code Key 10 484334 Voltage Class 400 Data according to IEC 60747and per diode unless otherwise specified 20110531a DSEP2x101-04A Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110531a DSEP2x101-04A 300 2400 250 2000 200 1600 TVJ = 150C TVJ = 100C TVJ = 25C IF 150 TVJ = 100C VR = 200 V 40 IF = 200 A IF = 100 A IF = 50 A Qr 1200 [A] 50 TVJ = 100C VR = 200 V IRM 30 [A] 20 [nC] 100 800 50 400 0 0.0 0.5 1.0 1.5 2.0 IF = 200 A IF = 100 A IF = 50 A 10 0 10 0 2.5 0 10 00 VF [V] 0 200 -diF /dt [A/s] Fig. 1 Forward current IF vs. VF 2.0 400 600 800 1000 -diF /dt [A/s] Fig. 2 Reverse recovery charge Qr versus -diF /dt Fig. 3 Peak reverse current IRM versus -diF /dt 60 160 TVJ = 100C VR = 200 V 50 140 1.50 TVJ = 100C IF = 100 A 1.25 1.5 IF = 200 A IF = 100 A IF = 50 A trr 120 Kf 1.0 40 1.00 30 0.75 20 0.50 VFR [ns] 100 trr [s] [V] IRM 0.5 80 Qr 0.0 10 60 0 40 80 120 160 0 0 200 400 TVJ [C] 600 800 1000 0 200 400 600 800 0.00 1000 -diF /dt [A/s] -diF /dt [A/s] Fig. 4 Dynamic parameters Q r, IRM versus TVJ tfr 0.25 VFR Fig. 6 Peak forward voltage VFR and tfr versus diF /dt Fig. 5 Recovery time trr versus -diF /dt 1 ZthJC 0.1 Constants for ZthJC calculation: [K/W] i 0.01 0.001 0.0001 0.0001 Rthi (K/W) ti (s) 1 0.212 0.0055 2 0.248 0.0092 3 0.063 0.0007 4 0.077 0.0391 DSEP 2x101-04A 0.001 0.01 0.1 1 10 t [s] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110531a