IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package TIP100, TIP101, TIP102 TIP105, TIP106, TIP107 Boca Semicondcutor Corp. BSC TIP100, 101, 102 TIP105, 106, 107 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 C E F DIM M IN. A B C D E F G H J K L M N O 14.42 9.63 3.56 K All dim insions in m m . L N O 1 2 3 O A H B J D G M ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 3 A; IB = 6 mA D.C. current gain IC = 3 A; VCE = 4 V VCBO VCEO IC Ptot Tj VCEsat max. 2.0 V hFE min. max. 1.0 20 K K 100 105 max. 60 max. 60 max. 101 106 80 80 5.0 VCBO VCEO VEBO Data Sheet 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DE G 7 101 106 80 80 8.0 80 150 http://www.bocasemi.com Continental Device India Limited M A X. 100 105 max. 60 max. 60 max. max. max. RATINGS (at TA=25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) 3 102 107 100 100 102 107 100 100 V V A W C V V V page: 1 Page 1 of 3 TIP100, TIP101, TIP102 TIP105, TIP106, TIP107 Collector current IC Collector peak current ICM Base current IB Total power dissipation up to TC = 25C Ptot Derate above 25C Total power dissipation up to T A = 25C Ptot Derate above 25C Junction temperature Tj Storage temperature Tstg THERMAL RESISTANCE From junction to ambient From junction to case max. max. max. max. max max. max max. IC = 8 A; VCE = 4 V Small signal current gain IC = 3A; VCE = 4V; f = 1.0 MHz Output capacitance f = 0.1 MHz IE = 0; V CB = 10V, PNP NPN Forward voltage of commutation diode IF = -IC = 10A; IB = 0 A A A W W/ C W W/ C C C 62.5 1.56 C/W C/W Rth j-a Rth j-c CHARACTERISTICS T amb = 25C unless otherwise specified Collector cutoff current IB = 0; VCE = 30 V IB = 0; VCE = 40 V IB = 0; VCE = 50 V IE = 0; VCB = 60V IE = 0; VCB = 80V IE = 0; V CB = 100V Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 30 mA; I B = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltages IC = 3 A; IB = 6 mA IC = 8 A; IB = 80 mA Base-emitter on voltage IC = 8 A; VCE = 4 V D.C. current gain IC = 3 A; VCE = 4 V 8.0 15 1.0 80 0.64 2.0 0.016 150 -65 to +150 100 105 101 106 102 107 - - 50 - - 50 ICEO ICEO ICEO ICBO ICBO ICBO max. 50 max. - max. - max. 50 max. - max. - - 50 - - 50 - IEBO max. 8 VCEO(sus)* VCBO VEBO min. min. min. VCEsat* VCEsat* max. max. 2.0 2.5 V V VBE(on)* max. 2.8 V hFE* min. max. 1.0 20 K K hFE* min. 200 |h fe | min. 4.0 Co max. max. 300 200 pF pF VF* max. 2.8 V 60 60 80 80 5.0 A A A A A A mA 100 100 V V V * Pulsed: pulse duration = 300 s; duty cycle 2%. http://www.bocasemi.com Continental Device India Limited Data Sheet page: 2 Page 2 of 3